Quick solid-ceramic coating ion plating apparatus
A technology of hard ceramics and coating ions, which is applied in the direction of ion implantation plating, coating, metal material coating technology, etc., can solve the problems of coating deposition rate, hardness and poor adhesion, and improve the coating quality , comprehensive performance improvement, and the effect of density improvement
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
example 1
[0022]Example 1: Under the condition of 0.5Pa and negative 150V bias, the metal Cr target arc discharge controlled by the magnetic field is used to prepare a pure Cr metal transition layer; then nitrogen gas is introduced, and the air pressure rises to 2.3Pa, and all arc targets and arc targets on the furnace wall are opened. The rotating target in the middle uses nitrogen gas to react with Cr evaporated from the target surface to form CrN. The nitrogen gas flow rate is 200-600 sccm; the current of a single circular arc target metal target on the furnace wall is 60-80A. The center rotating target current is 250-300A.
[0023] The magnetic field of the circular target on the furnace wall to control the movement of the arc is generated by a magnet placed behind the arc target. A uniformly distributed magnetic field with a strength of 50 Gauss is generated on the target surface.
[0024] The above-mentioned glow discharge cleaning is carried out at 350-400°C in an argon environ...
example 2
[0025] Example 2: Under the condition of 0.5Pa and negative 200V bias, the metal Ti target arc discharge controlled by the magnetic field is used to prepare a pure Ti metal transition layer; The rotating target uses nitrogen gas to react with Ti evaporated from the target surface to form TiN. The nitrogen gas flow rate is 100-250 sccm; the current of a single circular arc target metal target on the furnace wall is 40-60A. The center rotating target current is 180-250A.
[0026] The magnetic field of the circular target on the furnace wall to control the movement of the arc is generated by a magnet placed behind the arc target. A uniformly distributed magnetic field with a strength of 50 Gauss is generated on the target surface.
[0027] The above-mentioned glow discharge cleaning is carried out at 350-400°C in an argon environment; after the glow cleaning is completed, the cathode arc discharge of the metal Ti target is carried out under the condition of 0.5Pa to deposit the...
example 3
[0028] Example 3: Under the condition of 0.5Pa and negative 100V bias voltage, a metal Zr target arc discharge controlled by a magnetic field is used to prepare a pure Zr metal transition layer; then feed nitrogen, and the air pressure rises to 1.5Pa, and all arc targets and arcs on the furnace wall are opened. The rotating target in the middle uses nitrogen gas to react with Zr evaporated from the target surface to form ZrN. The nitrogen gas flow rate is 150-350 sccm; the current of a single circular arc target metal target on the furnace wall is 80-110A. The center rotating target current is 200-280A.
[0029] The magnetic field of the circular target on the furnace wall to control the movement of the arc is generated by a magnet placed behind the arc target. A uniformly distributed magnetic field with a strength of 50 Gauss is generated on the target surface.
[0030] The above-mentioned glow discharge cleaning is carried out at 350-400° C. under an argon atmosphere; afte...
PUM
Property | Measurement | Unit |
---|---|---|
diameter | aaaaa | aaaaa |
height | aaaaa | aaaaa |
diameter | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com