Method for preparing Ti-Si-N nanocrystalline-amorphous composite superhard coating
A nanocrystalline and hard coating technology, applied in coating, superimposed layer plating, metal material coating process, etc., can solve the problem of magnetron sputtering method with low ionization rate, poor use effect and low coating hardness and other problems, to achieve good application prospects, high ionization rate, and fast deposition rate.
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[0020] Example 1: The glow discharge cleaning of the workpiece is carried out at 400-450°C in an argon atmosphere; after the glow cleaning is completed, it is placed in a vacuum chamber, and a magnetic field is used under the conditions of 0.5Pa, negative 150V bias and 400-450°C A controlled metal target arc discharge is used to prepare a metal Ti transition layer. The deposition thickness of the metal Ti transition layer is 200 nanometers; then silane and nitrogen are introduced, and the pressure is controlled at 0.8 Pa. Ti ions are evaporated from the Ti target and react with nitrogen to form TiN . Silane dissociates into Si ions and reacts with nitrogen to form Si 3 N 4 . TiN and Si under the action of bias 3 N 4 At the same time, a film is grown on the substrate to form a Ti-Si-N nanocomposite coating. The flow rate of nitrogen gas is 150sccm; the flow rate of silane gas is 250sccm, and the SiH flowed into the vacuum chamber 4 The flow of nitrogen and nitrogen is controlled by...
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[0022] Example 2: The glow discharge cleaning of the workpiece is carried out at 400-450°C under an argon atmosphere; after the glow cleaning, it is placed in a vacuum chamber and controlled by a magnetic field under the conditions of 1Pa, negative 200V bias and 400-450°C The metal target arc discharge to prepare the metal Ti transition layer, the deposition thickness of the metal Ti transition layer is 200 nanometers; then pass in silane and nitrogen, and the pressure is controlled at 1.5Pa. Ti ions are evaporated from the Ti target and react with nitrogen to form TiN . Silane dissociates into Si ions and reacts with nitrogen to form Si 3 N 4 . TiN and Si under the action of bias 3 N 4 At the same time, a film is grown on the substrate to form a Ti-Si-N nanocomposite coating. The flow rate of nitrogen gas is 200 sccm; the flow rate of silane gas is 350 sccm, and the SiH that flows into the vacuum chamber 4 The flow of nitrogen and nitrogen is controlled by a mass flow controller,...
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