Structure of film thermoelectric converter based on bi-material microcantilevel and fabricating method thereof

A micro-cantilever beam, dual-material technology, applied in the structure and manufacture of thermoelectric converters, and the structure and manufacture of thin-film thermoelectric converters, can solve large conversion errors, reduce thermal conductivity and resistivity, and reduce heating resistance temperature. and other problems, to achieve the effect of high sensitivity, flexible design, and small AC-DC conversion error

Inactive Publication Date: 2009-10-28
CHINA JILIANG UNIV
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0007] However, this kind of thermoelectric converter using thermopile as temperature sensitive element has the following disadvantages: (1) From the perspective of improving the sensitivity of thermopile temperature sensor, thermocouple material needs to have high Seebeck coefficient, low resistivity, low thermal conductivity and other characteristics, but according to the Wedman-Franze law, the product of thermal conductivity and resistivity of the material is a constant, it is difficult to reduce thermal conductivity and resistivity at the same time, CuNi widely used at present 44 -Cu, CuNi-NiCr, and Bi-Sb thermocouples have relatively large thermal conductivity, and the heat insulation is not ideal. The heat transferred to the substrate through the thermocouple wire is one of the main sources of AC-DC conversion errors.
(2) The sensitivity of the thermocouple temperature sensitive element is relatively low
In order to improve the temperature measurement sensitivity (or the responsivity of the thermoelectric converter), more than 100 pairs of thermocouples are usually used to form the thermopile sensitive element. The size of the device is very large, and a large-area Si 3 N 4 /SiO 2 /Si 3 N 4 Heat insulation film, the film is easy to wrinkle or break, and it is difficul...

Method used

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  • Structure of film thermoelectric converter based on bi-material microcantilevel and fabricating method thereof
  • Structure of film thermoelectric converter based on bi-material microcantilevel and fabricating method thereof
  • Structure of film thermoelectric converter based on bi-material microcantilevel and fabricating method thereof

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Embodiment

[0045] The technical scheme of the invention is used to manufacture a thin-film thermoelectric transducer for detecting the deformation of a double-material micro-cantilever beam by a piezoresistive method. Among them, the dual-material microcantilever 2 adopts figure 1 (c) Bimaterial cantilever beam shown. Its production process is as follows:

[0046] 1) The original silicon wafer is an N-type, (100) plane silicon wafer with a resistivity of 1-10Ω.cm. (see attached image 3 [1])

[0047] 2) Low-pressure chemical vapor deposition (LPCVD) silicon nitride film with a thickness of 200nm; low-pressure chemical vapor deposition of polysilicon film with a thickness of 200nm, and thermal oxidation to convert it into a silicon dioxide film; low-pressure chemical vapor deposition of silicon nitride film , thickness 200nm. (see attached image 3 [2])

[0048] 3) Obtain the heating resistor 1 pattern by photolithography, sputter the nickel-chromium alloy thin film, and make the h...

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Abstract

The invention discloses a structure of a film thermoelectric converter based on a bi-material microcantilevel and a fabricating method thereof. The film thermoelectric converter mainly comprises a heating resistor 1, the bi-material microcantilevel 2 and a sealing ring 3. The principle of the bi-material microcantilevel measuring the temperature of the heating resistor 1 is similar to the principle of the traditional bi-metal temperature sensor, and heat of the heating resistor 1 after the temperature rises leads the temperature of the bi-material microcantilevel 2 to rise through ways of convection, radiation, or heat exchange and the like. Because heat expansion coefficients of two materials made into the bi-material microcantilevel 2 are different, the deflexion at the free end or the strain at the root part of the bi-material microcantilevel 2 is changed, and the temperature information of the heating resistor 1 can be obtained after the shape change of the bi-material microcantilevel 2 is detected by a detection element 9. The film thermoelectric converter based on the bi-material microcantilevel 2 has high sensitivity of measuring the heating resistor 1 by using the bi-material microcantilevel 2, little heat of transmitting to an underlayer through a bi-material microcantilevel temperature sensitive element, and small error of converting alternative current and direct current; meanwhile, the heating resistor can be flexibly designed.

Description

technical field [0001] The invention relates to a structure and a manufacturing method of a thermoelectric transducer, in particular to a structure and a manufacturing method of a thin-film thermoelectric transducer based on a dual-material micro-cantilever beam, and belongs to the field of micro-electromechanical systems (MEMS). Background technique [0002] The AC-DC conversion standard is one of the basic electrical standards. Through this standard, the 10Hz-1MHz AC voltage (or current) can be derived from the corresponding DC flow, and traced to the Josephson DC quantum voltage reference (uncertainty better than 10 -8 ). At present, the most accurate AC-DC conversion standard system in the world is realized by thermoelectric converters. A thermoelectric converter consists of a heating resistor and a temperature sensor. AC voltage (or current) and DC voltage (or current) are applied to the heating resistor in turn. The temperature sensor measures the temperature of the ...

Claims

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Application Information

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IPC IPC(8): G01R19/03B81B7/02B81C1/00
Inventor 韩建强卢少勇李青
Owner CHINA JILIANG UNIV
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