Pellicle and method for fabrication thereof

Abstract

A silicon single crystal film having a crystal plane as its principal plane, the crystal plane being inclined at 3 to 5 DEG from any lattice plane belonging to {100} planes or {111} planes is used as a pellicle film (11). The silicon single crystal having such a crystal plane as its principal plane has effective bond density and Young's modulus thereof which are about 40% to about 50% higher than those of a silicon single crystal with orientation, and therefore a cleavage and crack do not easily occur. Moreover, the silicon single crystal has a high chemical resistance such as hydrofluoric acid resistance, and hardly causes an etch pit and void. Accordingly, the present invention can provide a pellicle comprising a pellicle film for EUV having high transmission, and excellent mechanical and chemical stability, as well as having a high yield, and being practical also in cost.

Description

technical field [0001] The present invention relates to a pellicle component for lithography, more specifically, to a pellicle component suitable for extreme ultraviolet (EUV: Extreme Ultra Violet) lithography process and a manufacturing method thereof. Background technique [0002] With the high integration of semiconductor devices, the patterns formed by lithography are also miniaturized, and devices with a pattern width of about 45nm are also entering the practical stage. Such a thin line pattern can be realized by lithography using ArF immersion exposure method or double exposure method, which are improved techniques of conventional excimer exposure technology. [0003] However, lithography based on these excimer exposure techniques is difficult to cope with finer patterns, such as patterns with a width of less than 32nm. Weiying, began to receive attention. [0004] In order to practically use the exposure technology of EUV light with a main wavelength of 13.5nm, it g...

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Problems solved by technology

However, in a further review later, it was found that in the invention of the above patent application, when a silicon single crystal film is used as a protective film and the silicon single crystal film has a (100) plane as the main surface, the EUV protective film Although the optical characteristics of the module are excellent, when the silicon crystal is thinned in the manufacturing process of the pellicle, the silicon crystal film is prone to defects such as cracks in the steps of peeling, etching or handling, resulting in a decrease in the manufacturing yield

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