Industrialized production method of solar level polysilicon

A solar-grade, production method technology, applied in chemical instruments and methods, polycrystalline material growth, single crystal growth, etc., can solve the problems of high product cost, high construction cost, loss of enterprises and countries, etc., and achieve high product quality and technology. Flexible, productive results

Inactive Publication Date: 2009-11-11
BEIHANG UNIV
View PDF0 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the technology is not up to standard, the product cost is high, resulting in blind investment and low-level redundant construction, which will cause waste of resources and energy, and cause losses to enterprises and the country
[0005] At present, there are also some purification processes using physical methods, such as using electron beam and / or plasma beam high-energy beams to directly smelt and purify metal silicon and combine it with directional solidification to obtain solar-grade polysilicon. The production equipment used is complex and expensive. Due to the limited manufacturing level, it is difficult to achieve large-scale and industrial production, and the resulting products cannot reach the quality of solar-grade polysilicon produced by the Siemens method

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] Step 1: Aluminum-silicon alloy produced by molten salt electrolysis

[0047] The anode material (wherein 100g is industrial silicon, 400g is high-purity copper (mass percentage purity is 99.99%), mixed) of putting into the anode material of 500g at the bottom of the electrolyzer, then on the anode material, put into the anode material of 100g Sodium chloride, then put 160g of high-purity aluminum (mass percentage purity is 99.99%) on the sodium chloride; after the electrolysis materials are laid by layers, the voltage of 3V, the current of 20kA, 900 ℃ Aluminum-silicon alloy was prepared after electrolysis for 30 minutes under certain temperature conditions;

[0048] The obtained aluminum-silicon alloy is subjected to component analysis (mass percentage content), and the silicon content is 30.3%, the aluminum content is 69.65%, the B content is 0.007%, the P content is 0.003%, the Fe content is 0.01%, and the Ca content is 0.01% %, and trace impurities.

[0049] Step 2...

Embodiment 2

[0058] Step 1: Aluminum-silicon alloy produced by molten salt electrolysis

[0059] The anode material (wherein 250g is industrial silicon, 650g is high-purity copper (mass percentage purity is 99.99%), mixed) is put into the anode material of 900g at the bottom of the electrolyzer, then on the anode material, put into 100g of the anode material The mixture of sodium chloride and potassium chloride (the ratio of the consumption of sodium chloride and potassium chloride is 1: 3), on the mixture of sodium chloride and potassium chloride, tile the high-purity aluminum that puts into 200g again ( The mass percent purity is 99.99%); after the electrolysis materials are laid out in layers, the aluminum-silicon alloy is obtained after electrolysis at a voltage of 5V, a current of 5kA, and a temperature of 1000°C for 80 minutes;

[0060] The obtained aluminum-silicon alloy was subjected to component analysis (mass percentage content), and the silicon content was 35.73%, the aluminum c...

Embodiment 3

[0068] Step 1: Aluminum-silicon alloy produced by molten salt electrolysis

[0069] The anode material of putting into 150g (wherein 30g is industrial silicon, 120g is high-purity copper (mass percentage purity is 99.99%), mixed) is put into the anode material of 150g at the bottom of the electrolyzer, then on the anode material, put into 100g of tile Calcium chloride, and then put 50g of high-purity aluminum (mass percentage purity is 99.99%) on the calcium chloride; after the electrolytic materials are laid in layers, the voltage of 4V, the current of 50kA, 920 ℃ Aluminum-silicon alloy was prepared after electrolysis for 60 minutes under the temperature condition;

[0070] The obtained aluminum-silicon alloy is subjected to component analysis (mass percentage content), and the silicon content is 29.86%, the aluminum content is 70.04%, the B content is 0.01%, the P content is 0.005%, the Fe content is 0.02%, and the Ca content is 0.01% %, and trace impurities.

[0071] Step...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
particle diameteraaaaaaaaaa
Login to view more

Abstract

The invention discloses an industrialized production method for extracting solar level polysilicon from industrial silicon. The industrialized production method adopts a combined method which comprises the steps of: preparation of aluminium silicon alloy by fusion electrolysis, smelting purification by electromagnetic induction, fractional crystallization purification and vacuum distillation purification. The production method reduces production cost which is high in the chemical method, simplifies production equipment of the physical method, leads the mass percentage purity of the prepared solar level polysilicon to be 99.9999 percent to 99.99999 percent and is more suitable for processing solar cells.

Description

technical field [0001] The invention relates to a method for producing solar-grade polysilicon. More specifically, it refers to an industrialized production method of solar-grade polycrystalline silicon using a combined process of molten salt electrolysis→electromagnetic induction smelting→fractional crystallization→vacuum distillation. Background technique [0002] At present, the world is facing serious problems such as energy shortage and ecological environment deterioration, and the effective way to solve them is to use solar photovoltaic technology. Among them, polycrystalline silicon cells account for more than 60% of the world's total solar cell production. Producing large quantities of solar cells will require large quantities of solar-grade polysilicon material. [0003] The existing production methods of solar-grade polysilicon materials include chemical methods and physical methods. The chemical method mainly includes the Siemens method and the improved Siemens...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/06C30B28/02
Inventor 卢惠民
Owner BEIHANG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap