Pattern transferring method

A graphics transfer and graphics technology, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of poor steepness of the side wall of the photoresist pattern structure, unstable pattern structure, unfavorable etching, etc., to avoid Unstable graphic line structure, avoid uneven and uneven coating, and prevent inconsistent light energy
CN101587304AInactive Publication Date: 2009-11-25SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP
0 Cites 5 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP
Publication Date
2009-11-25
Estimated Expiration
Not applicable · inactive patent

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention provides a pattern transferring method, which comprises the following steps: providing a semiconductor substrate with a plurality of mask layers, wherein the mask layers which are furthest from the semiconductor substrate and are not etched are provided with photoresist layers, and the photoresist layers contain a photographic acidifier and alkyl phenoxy benzoic acid resin; exposing an objective pattern to the photoresist layer to form a photoresist layer with a semiconductor device pattern, wherein the depth of the semiconductor device pattern on the photoresist layer is less than the depth of the photoresist layer; performing silanization treatment on the surface of the photoresist layer with the objective pattern; forming an anti-plasma etching layer with an objective pattern shape on the photoresist layer; taking the anti-plasma etching layer on the photoresist layer as a mask; performing plasma etching on the photoresist layer until a mask layer is exposed; and taking the anti-plasma etching layer or the photoresist layer as the mask to etch the mask layer. The pattern transferring method does not need to coat an anti-reflection layer on the etched surface and avoids the unsmooth coating of the anti-reflection layer, thereby avoiding an unstable structure of pattern lines formed by the photoresist layer.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention relates to a semiconductor manufacturing process, in particular to a pattern transfer method. Background technique

[0002] In order to improve integration and reduce manufacturing costs, the critical dimensions of semiconductor devices are continuously reduced, and the number of semiconductor devices per unit area of ​​a chip is continuously increasing. While the critical dimensions of semiconductor devices are reduced, the patterns of semiconductor devices are also continuously miniaturized. However, the formation of fine patterns and fine pitches is becoming more and more difficult. In order to form fine patterns, a double exposure process for the pattern on the photomask is introduced on the film layer.

[0003] The August 2007 issue of "Semiconductor Manufacturing" published an article "Prospects for the Application of Overlay Pattern Immersion Lithography Technology in 32nm Half-Pitch" which discloses the existing method of manufac...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More