Method for improving field emission performance of carbon nano tube film

A technology of carbon nanotube film and field emission, which is applied in the direction of nanotechnology, nanotechnology, nanostructure manufacturing, etc., can solve the problem of reducing the adhesion between carbon tube slurry and cathode electrode, affecting the uniformity of full-screen emission, and improving field emission performance Limited problems, to achieve the effect of increasing field emission current density, enhancing mechanical bonding, and high field enhancement factor

Inactive Publication Date: 2009-12-30
SHANGHAI JIAO TONG UNIV
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Problems solved by technology

On the samples prepared by the screen printing method, the covering layer on the cathode surface was removed by applying external mechanical force by mechanical friction method and adhesive tape method, so that the carbon nanotubes buried below the surface protruded from the surface, thus greatly improving the Cathode performance, but it may also affect the emission uniformity of the full screen due to uneven mechanical force, and even reduce the adhesion between the carbon tube slurry and the cathode electrode and cause device damage
When preparing samples by electrophoretic deposition, depositing a metal transition layer can increase the adhesion of carbon nanotubes to the substrate. limited

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] Step 1, metal Ti is plated on the glass substrate by magnetron sputtering. The specific sputtering conditions are: background vacuum degree 4×10 -4 Pa, argon working pressure 3×10 -1 Pa, sink sputtering power 200W, sputtering time 20min, Ti thickness 300nm;

[0019] Step 2, depositing a carbon nanotube film on the surface of the metal Ti by means of electrophoretic deposition. The electrophoretic fluid consists of 4mg multi-walled carbon nanotubes and 10mg Mg(NO 3 ) 2 ·6H 2 O was prepared by adding 400ml of absolute ethanol. Electrophoretic deposition conditions are: electrode distance 2cm, electrophoresis voltage 10V, electrophoresis time 10min;

[0020] Step 3: Perform ultrasonic nano-welding on the electrophoresed sample, the ultrasonic frequency is 60kHz, the ultrasonic energy is 0.1J, the pressure is 0.2MPa, and the total area of ​​the welding head is 1mm 2 The stainless steel lattice welding head, the size of each welding point (length × width) is 1um × 1um...

Embodiment 2

[0022] Step 1, metal W is plated on the silicon substrate by vacuum evaporation. The specific plating conditions are: vacuum degree 5×10 -4 Pa, argon working pressure 5×10 -1 Pa, sink sputtering power 200W, plating time 13min, W thickness 250nm;

[0023] Step 2, depositing a carbon nanotube film on the surface of the metal W by means of electrophoretic deposition. The electrophoretic fluid consists of 4mg single-walled carbon nanotubes and 10mg Mg(NO 3 ) 2 ·6H 2 O was prepared by adding 400ml of absolute ethanol. Electrophoretic deposition conditions are: electrode distance 2cm, electrophoresis voltage 20V, electrophoresis time 15min;

[0024] Step 3: Perform ultrasonic nano-welding on the electrophoresed sample, the ultrasonic frequency is 60kHz, the ultrasonic energy is 3J, the pressure is 0.3MPa, and the area of ​​the welding head is 50mm 2 The stainless steel lattice welding head, the size of each welding point (length × width) is 10um × 10um, after welding for 1 se...

Embodiment 3

[0026] Step 1, metal Au is plated on the glass substrate by magnetron sputtering method. The specific sputtering conditions are: vacuum degree 5×10 -4 Pa, argon working pressure 5×10 -1 Pa, sputtering power 200W, sputtering time 10min, Au thickness 250nm;

[0027] Step 2, using electrophoretic deposition to deposit a carbon nanotube film on the surface of the metal Au. The electrophoretic fluid consists of 4mg multi-walled carbon nanotubes and 10mg Mg(NO 3 ) 2 ·6H 2 O was prepared by adding 400ml of absolute ethanol. Electrophoretic deposition conditions are: electrode distance 2cm, electrophoresis voltage 15V, electrophoresis time 20min;

[0028] Step 3: Perform ultrasonic nano-welding on the electrophoresed sample, the ultrasonic frequency is 60kHz, the ultrasonic energy is 5J, the pressure is 0.4MPa, and the area of ​​the welding head is 100mm 2 The stainless steel lattice welding head, the size of each welding point (length × width) is 30um × 30um, after welding for...

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Abstract

A method for improving field emission performance of a carbon nano tube film in the technical field of nano materials comprises the following steps: plating a metal thin film on a plane substrate; depositing the carbon nano tube film on the metal film; carrying out ultrasound nano welding on the metal film and the carbon nano tube film, thus obtaining the carbon nano tube film with improved field emission performance. The method of the invention forms excellent mechanical and electric contact between the carbon nano tube film and the metal film, thus obtaining a field emission component with low starting electric field, large emission current density and good current stability.

Description

technical field [0001] The invention relates to a method in the technical field of nanometer materials, in particular to a method for improving the field emission performance of a carbon nanotube thin film. Background technique [0002] Field emission technology is a kind of cold cathode emission technology, which has the characteristics of high current density, low power consumption, and fast response. It has important application prospects in the field of vacuum electronics such as flat panel displays, X-ray sources, and microwave amplifiers. Thin-film field emission cold cathodes have incomparable advantages over ordinary cathodes: low operating voltage, no warm-up delay, and high integration, and can be widely used in high-performance display devices such as high-quality flat-panel TVs and portable computer monitors. In the field emission research of thin films, one of the key issues is to develop effective and reliable solid emission surfaces. Although a lot of progres...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J9/02B82B3/00
Inventor 徐东赵波陈长鑫张亚非
Owner SHANGHAI JIAO TONG UNIV
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