Method for preparing sulfur doped nanometer ZnO of various shapes

Abstract

The invention relates to a method for preparing sulfur doped nanometer ZnO in different shapes, which comprises the following steps: a formamide solution with concentration of 5 percent and a sodium thiosulfate solution with the concentration of 0.095M are mixed in a container, and the volume ratio of the formamide solution to the sodium thiosulfate solution in an obtained mixed solution is 5-95:5-95; a glass slide is put at the bottom of the container; then a zinc foil is put on the glass slide, and an opening of the container is covered; the container is put in an oven at 60-70 DEG C to react for 18-30 hours; and then the zinc foil is taken out, washed clean by deionized water and alcohol and dried. The method can conveniently prepare required sulfur doped nanometer ZnO in different shapes by controlling raw material proportions, has simplicity, energy saving, easy operation and no special requirement on equipment and is suitable for industrial mass production.

Description

Technical field [0001] The invention relates to a preparation method of sulfur-doped nano ZnO. Background technique [0002] ZnO nanomaterials are the most abundant materials in nanomaterials, including nanowires, nanorods, nanoribbons, nanotubes, nanorings, nano bows, nano flowers, nano springs, nano nails, etc. ZnO is both a semiconductor material and a piezoelectric material. ZnO nanomaterials have new properties such as quantum confinement effect, macroscopic quantum tunneling effect, and small size effect. This makes nano-ZnO has incomparable special properties and new uses than ordinary ZnO materials, and has broad application prospects in the fields of nanoelectronics, nanophotoelectronics, biomedicine, and gas sensors. [0003] Nano-ZnO is a wide-bandgap semiconductor material. Doping can change the energy level structure of the forbidden band, thereby changing the electromagnetic and optical properties. Various metal or non-metal doped ZnO nano-materials have been synthes...

AI Technical Summary

Problems solved by technology

Most of the doping methods are carried out under high temperature conditions, energy consumption, high cost, and complicated equipment; only the chemical solution method is carried out under low temperature conditions, but it uses zinc powder on the silicon substrate to prepare ZnO rods by gas phase method. After the array, thiourea is used to convert part of the ZnO into sulfur doping in the aqueous solution system of thiourea. The preparation process is complicated and requires two steps to complete, and the preparation of the ZnO rod array is still carried out under high temperature conditions.

[0007] More importantly: each of the existing methods can only produce a product with one shape, that is, the same method cannot produce controllable changes in the shape of the product

If you want to obtain sulfur-doped ZnO with different shapes, you need to use different methods and different equipment to manufacture, which is extremely inconvenient to operate, which seriously restricts the use of sulfur-doped ZnO

Images