Preparation method of tungsten-plated SiC particle reinforced copper-based composite material used for electronic packaging

A copper-based composite material, particle-reinforced technology, applied in the manufacture of circuits, electrical components, semiconductor/solid-state devices, etc., can solve the problems of poor interface wettability and performance degradation of SiC/Cu materials, and achieve good mechanical strength and thermal expansion coefficient. The effect of reducing and simple process operation

Inactive Publication Date: 2010-01-13
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the poor interfacial wettability between SiC particles and Cu matrix and easy reaction at high temperature, this will lead to the degradation of SiC/Cu material properties.
Therefore, the biggest challenge of the existing preparation technology comes f

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0018] Example 1

[0019] A copper-based composite material containing 50% tungsten-plated SiC particles and 0.5% added elements with a thickness of 0.5 mm was prepared.

[0020] 1. The composition and volume percentage of the raw materials are: 50% of tungsten-plated SiC particles (50μm in size), 0.5% of elemental Ni powder, and 49.5% of Cu matrix. In the Cu matrix, Cu metal powder is 20% of the total volume of the raw material, and the rest is Cu metal block (49.5%-20%=29.5%).

[0021] 2. Mix Cu metal powder, additive element powder and tungsten-plated SiC particles, the mixing time is 1 hour, and the mixing speed is 100 revolutions per minute.

[0022] 3. Press the mixed powder into a blank under a pressure of 50MPa.

[0023] 4. The Cu metal block and the pressed blank are infiltrated in an infiltration furnace; the infiltration temperature is 1100℃, and the infiltration atmosphere is hydrogen atmosphere; the infiltration speed is 5min / mm, and the infiltration time=5min / mm ×0.5mm=2...

Example Embodiment

[0025] Example 2

[0026] A copper-based composite material with a thickness of 200 mm containing 70% tungsten-plated SiC particles and 3% added elements was prepared.

[0027] 1. The composition and volume percentage of the raw materials are: 70% of tungsten-plated SiC particles (grain size of 1μm), 3% of Fe powder and 27% of Cu matrix. In the Cu matrix, Cu metal powder is 10% of the total volume percentage of the raw material, and the rest is Cu metal block (27%-10%=17%).

[0028] 2. Mix Cu metal powder, additive element powder and tungsten-plated SiC particles, the mixing time is 20 hours, and the mixing speed is 30 rpm.

[0029] 3. Press the mixed powder into a blank under a pressure of 150MPa.

[0030] 4. The Cu metal block and the press-formed blank are infiltrated in an infiltration furnace; the infiltration temperature is 1350℃, the infiltration atmosphere is hydrogen atmosphere; the infiltration rate is 2min / mm, and the infiltration time=2min / mm ×200mm=400 minutes.

[0031] 5....

Example Embodiment

[0032] Example 3

[0033] A copper-based composite material containing 60% tungsten-plated SiC particles and 1% additive elements with a thickness of 0.5 mm was prepared.

[0034] 1. The composition and volume percentage of the raw materials are: 60% of tungsten-plated SiC particles (30μm in size), 1% of Co powder added, and 39% of Cu matrix. In the Cu matrix, Cu metal powder is 15% of the total volume of the raw material, and the rest is Cu metal block (39%-15%=24%).

[0035] 2. Mix Cu metal powder, additive element powder and tungsten-plated SiC particles. The mixing time is 15 hours and the mixing speed is 50 revolutions per minute.

[0036] 3. Press the mixed powder into a blank under a pressure of 100MPa.

[0037] 4. The Cu metal block and the pressed blank are infiltrated in an infiltration furnace; the infiltration temperature is 1300℃, the infiltration atmosphere is hydrogen atmosphere; the infiltration speed is 4min / mm, and the infiltration time=4min / mm ×0.5mm=2 minutes.

[00...

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Abstract

The invention discloses a preparation method of a tungsten-plated SiC particle reinforced copper-based composite material used for electronic packaging. The raw material comprises the following components and volume percentage: 50 percent to 75 percent of tungsten-plated SiC particles, 0.5 percent to 3 percent of adding elements and 22 percent to 49.5 percent of Cu matrix, wherein the adding elements are one or more of Fe, Co and Ni. The composite material is prepared by adopting the techniques of mixing powder, pressing, infiltrating and repressing, wherein the Cu matrix are Cu metal powder and Cu metal blocks which are respectively added before and after pressing blanks. The preparation method adopts SiC particles with tungsten-plated surfaces, adds alloy elements, greatly improves mutual wettability among object phases, therefore, the prepared material has excellent thermal conductivity, thermal expansion coefficient and mechanical property; the adopted liquid-phase infiltrating method has the advantages of simple operation, low cost, high material compactness and applicability to scale production.

Description

technical field [0001] The invention relates to a method for preparing a tungsten-plated SiC particle-reinforced copper-based composite material for electronic packaging, and belongs to the technical field of metal-based composite material preparation. Background technique [0002] Electronic packaging is an operation process that rationally arranges, assembles, bonds, connects, isolates and protects the various components that constitute electronic devices or integrated circuits according to the specified requirements. It requires the packaging materials used to have high thermal conductivity. , and has a low thermal expansion rate, and plays the role of mechanical support, electrical connection, physical protection, external field shielding, stress relaxation, heat dissipation and moisture resistance, size transition and stable component parameters. Today, with the rapid development of microelectronics technology, the packaging density of semiconductor integrated circuits ...

Claims

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Application Information

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IPC IPC(8): C22C1/05C22C1/10H01L21/60
Inventor 顾明元甘可可
Owner SHANGHAI JIAO TONG UNIV
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