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Vertical-type furnace for alpha-HgI2 single crystal growth and growth method of alpha-HgI2 single crystal

A mercury iodide single and vertical furnace technology, which is applied to chemical instruments and methods, single crystal growth, crystal growth, etc., can solve the problems of complex temperature control system, high production cost, single crystal damage, etc., and achieve process simplification and production The effect of low cost and easy operation

Inactive Publication Date: 2012-05-23
XIAN TECH UNIV
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  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The present invention provides a vertical furnace for growing mercuric iodide single crystals and a method for growing the crystals, so as to solve the existing problems in the prior art that the temperature control system is complicated, the production cost is high, and the single crystals need to be seeded and damaged due to processing. question

Method used

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  • Vertical-type furnace for alpha-HgI2 single crystal growth and growth method of alpha-HgI2 single crystal
  • Vertical-type furnace for alpha-HgI2 single crystal growth and growth method of alpha-HgI2 single crystal

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Effect test

Embodiment 1

[0025] 1. Preparation: put 5N high-purity mercury iodide polycrystalline powder into the growth ampoule 11 and vacuumize to -10 -5 Torr and seal the tube, and drive the material in the horizontal furnace, so that the raw material is placed in the raw material area;

[0026] 2. Fixing of raw materials: Lift the metal pole 7 to the installation position through the lifting device, fix the crystal selection end of the growing ampoule 11 on the metal pole 7 downward, and adjust the position of the growing ampoule 11 through the metal pole 7; turn on the temperature The control system 14, the temperature control system 14 starts the heater in the lower cavity 4, and when the temperature of the crystal growth zone is 110°C, it starts to keep warm for 6 hours to drive away the raw materials that may slip;

[0027] 3. Crystal growth: start the heater and temperature control system 14 in the upper cavity 3, heat up and adjust the temperature (T original=118°C, T length=104°C), open the...

Embodiment 2

[0030] 1. Preparatory work: put 5N high-purity mercury iodide polycrystalline powder into the growth ampoule 11, and vacuumize to 10 -4 Torr and seal the tube;

[0031]2. Fixing of raw materials: Lift the metal pole 7 to the installation position through the lifting device, fix the crystal selection end of the growing ampoule 11 on the metal pole 7 downward, adjust the position of the growing ampoule 11 through the metal pole 7; turn on the temperature The control system 14, the temperature control system 14 starts the heater in the lower cavity 4, and when the temperature of the crystal growth area is 120°C, it starts to keep warm for 4 hours to drive away the raw materials that may slip;

[0032] 3. Crystal growth: start the heater and temperature control system 14 in the upper cavity 3, heat up and adjust the temperature (T original=120°C, T length=100°C), open the rotating assembly in the adjustment mechanism 15, and drive the metal The pole 7 rotates to make the growth a...

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Abstract

The invention relates to the technical field of alpha-HgI2 single crystal growth, in particular to a vertical-type furnace for alpha-HgI2 single crystal growth and a method using the furnace to realize the growth of alpha-HgI2 single crystal. The invention aims at solving the problems of complicated temperature control system, high production cost, seed crystal demand and considerable damage of single crystal caused by processing in the prior art. The technical scheme currently adopted is a vertical-type furnace for alpha-HgI2 single crystal growth and a method using the furnace to realize the growth of alpha-HgI2 single crystal, comprising the following steps: sheathing a cylinder quartz vacuum insulation layer and a hearth in turn on a base plate of the furnace body, separating a cylinder chamber between the quartz vacuum insulation layer and the hearth into an upper chamber and a lower chamber by a heat insulation ring, setting heating devices in the upper chamber and the lower chamber respectively, setting a growth ampoule in the hearth and arranging an adjustment mechanism outside the base plate of the furnace body. Compared with the prior art, the invention has the following advantages and effects: 1. simple structure; 2. low production cost; 3. high utilization rate of single crystal; and 4. multiple functions of devices.

Description

Technical field: [0001] The present invention relates to mercury iodide (α-HgI 2 ) technical field of single crystal growth, specifically referring to a kind of growth mercuric iodide (HgI 2 ) Single crystal vertical furnace and method for growing mercury iodide single crystal by using the vertical furnace. Background technique: [0002] Mercury iodide crystal is a II-VII compound semiconductor, the single crystal structure is square, and its lattice parameter a=4.36 c=12.45 The mercury iodide crystal has a large effective atomic number (8053), a large band gap (2.13eV), and a high bulk dark resistance (>10 13 Ω), high ionization efficiency (52%), large photoelectric linear absorption coefficient, high detection efficiency, good energy resolution, good stopping power and high sensitivity to X-rays and γ-rays, and can work at room temperature and Therefore, mercury iodide crystals are currently one of the excellent materials for preparing semiconductor detectors at room...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B23/00C30B29/12
Inventor 许岗李高宏介万奇夏峰王喜锋王春景
Owner XIAN TECH UNIV
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