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Method for manufacturing semiconductor element

A technology of semiconductors and devices, applied in the field of manufacturing semiconductor devices, can solve problems such as corrosion, and achieve the effects of reducing manufacturing costs, preventing manufacturing yields, and preventing reductions

Inactive Publication Date: 2012-03-21
SUMITOMO ELECTRIC IND LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

ZrO due to heat treatment 2 The membrane is resistant to corrosion by ammonium fluoride, so only SiO can be selectively etched 2 membrane

Method used

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  • Method for manufacturing semiconductor element
  • Method for manufacturing semiconductor element
  • Method for manufacturing semiconductor element

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0022] figure 1 is a flowchart showing a method of manufacturing a compound semiconductor device according to Embodiment 1 of the present invention. Figure 2-11 for display figure 1 Schematic cross-sectional views of the various steps of the method of fabricating a compound semiconductor device shown in . refer to Figure 1-11 A method of manufacturing a compound semiconductor device of the present invention will be described.

[0023] In the method of manufacturing a compound semiconductor device of the present invention, such as figure 1 As shown in , first, a step (S10) of forming a GaN-based semiconductor layer is carried out. In this step (S10), if figure 2 As shown in , a GaN-based semiconductor layer 2 is formed on the front side of a substrate 1 using an epitaxial growth method. In this step, as the substrate 1 , a substrate that allows a GaN-based semiconductor layer to be formed on the front surface thereof, for example, a substrate composed of GaN, sapphire,...

Embodiment approach 2

[0038] Figure 12 It is a schematic sectional view showing a method of manufacturing a compound semiconductor device according to Embodiment 2 of the present invention. refer to Figure 12 A method of manufacturing a compound semiconductor device according to Embodiment 2 of the present invention will be described.

[0039] The method for manufacturing a compound semiconductor device according to Embodiment 2 of the present invention basically includes the following Figure 1-11 The described method of manufacturing a compound semiconductor device has the same steps, but the layer used as a mask for forming the ridge 12 is different. Specifically, in the method for manufacturing a compound semiconductor device according to Embodiment 2 of the present invention, the implementation of figure 1 Steps (S10) to (S40) of the manufacturing method shown in the same steps. As a result, got Figure 4 structure shown in . Then, as in Embodiment 1 described above, using the resist f...

Embodiment approach 3

[0043] The method for manufacturing a compound semiconductor device according to Embodiment 3 of the present invention basically has the same Figure 1-11 The same configuration as the method of manufacturing a compound semiconductor device described in Embodiment 1 of the present invention. However, the etchant used in the step of receding the sidewall of the first film (S60) and the step of lifting off (S80) is not an alkaline aqueous solution but a mixed acid containing phosphoric acid, nitric acid, acetic acid and water. As the mixed acid, for example, a mixed acid having a composition containing 80% by mass of phosphoric acid, 5% by mass of nitric acid, 10% by mass of acetic acid, and the balance of water can be used. In this case, the same effects as Embodiment 1 of the present invention can be obtained.

[0044] When a mixed acid is used as described above, as the material of the mask layer 14, silicon monoxide (SiO), silicon nitride (SiN), zirconia (ZrO 2 ), tantalum...

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Abstract

A method for manufacturing a semiconductor device according to the present invention includes the following step: a step (S10) of forming a GaN-based semiconductor layer, a step (S20) of forming an Al film on the GaN-based semiconductor layer, a step (S30, S40) of forming a mask layer composed of a material having a lower etching rate than that of the material constituting the Al film, a step (S50) of partially removing the Al film and the GaN-based semiconductor layer using the mask layer as a mask to form a ridge portion, a step (S60) of retracting the positions of the side walls at the ends of the Al film from the positions of the side walls of the mask layer, a step (S70) of forming a protection film composed of a material having a lower etching rate than that of the material constituting the Al film on the side surfaces of the ridge portion and on the upper surface of the mask layer, and a step (S80) of removing the Al film to remove the mask layer and the protection film formed on the upper surface of the mask layer.

Description

technical field [0001] The present invention relates to a method of manufacturing a semiconductor device, and more particularly, to a method of manufacturing a semiconductor device including a gallium nitride-based semiconductor layer. Background technique [0002] Semiconductor devices having ridge structures formed in gallium nitride-based semiconductor layers are known. As a method of forming such a ridge structure in a semiconductor device, various methods have been proposed. [0003] For example, Patent No. 3604278 (hereinafter referred to as "Patent Document 1") discloses the formation of ridges in a gallium nitride-based semiconductor layer by performing dry etching using a first protective film or a photoresist film as a mask. structure, wherein the first protective film is composed of silicon oxide. After dry etching, a second protective film made of a material different from the first protective film is formed to cover the formed ridge (strip waveguide), and the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/306H01L21/3065H01L33/00H01S5/22H01S5/323H01L33/20H01L33/32
CPCH01L21/3081H01S5/2086H01S5/0425H01L2933/0016H01L33/32H01L2933/0025H01S5/22H01S5/323H01L21/306
Inventor 北林弘之片山浩二荒川聪
Owner SUMITOMO ELECTRIC IND LTD