Preparation method of patternable thin polymer film in MEMS field
A polymer film and patterning technology, applied in the process of producing decorative surface effects, gaseous chemical plating, manufacturing microstructure devices, etc., can solve the problem of poor bonding force between SU-8 adhesive film and substrate, poor selectivity, Remove difficulties and other problems to achieve the effect of good binding force, convenient operation and low cost
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Embodiment 1
[0027] Embodiment 1: general patternable polymer film production method
[0028] This embodiment includes the following steps:
[0029] Step 1, after cleaning the prepared substrate, sputtering the bonding layer and the seed layer on the substrate in sequence;
[0030] The specific operating parameters of the sputtering are: background vacuum 2×10 -4 Pa; working pressure: 8×10 -1 Pa, power 600W, time 45min;
[0031] The bonding layer is Cr with a thickness of 700? ;
[0032] The seed layer is Cu with a thickness of 900? ;
[0033] Step 2, by throwing the photoresist and patterning it with a metal structure mask, and then leaving a patterned seed layer after developing;
[0034] The concrete operating parameter of described photoresist throwing is: 2000rpm / min;
[0035] The thickness of the photoresist is 20 μm.
[0036] Step 3, performing electroplating treatment on the seed layer to form a metal structure with a height of 10 μm;
[0037] The specific operating param...
Embodiment 2
[0046] Embodiment 2: Manufacturing method of metal / polymer composite cantilever beam
[0047] This embodiment includes the following steps:
[0048] Step 1, after cleaning the prepared substrate, sputtering the bonding layer and the seed layer on the substrate in sequence;
[0049] The specific operating parameters of the sputtering are: background vacuum 2×10 -4 Pa; working pressure: 8×10 -1 Pa, power 600W, time 30min;
[0050] The bonding layer is Cr with a thickness of 600? ;
[0051] The seed layer is Cu with a thickness of 800? .
[0052] Step 2, by throwing the photoresist and patterning it with a pedestal mask, and then leaving a patterned seed layer after developing;
[0053] The concrete operating parameter of described photoresist throwing is: 1000rpm / min;
[0054] The thickness of the photoresist is 30 μm.
[0055] Step 3, performing electroplating treatment on the seed layer to make a metal base;
[0056] The specific operating parameters of the electropl...
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Abstract
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