Supercharge Your Innovation With Domain-Expert AI Agents!

Method for eliminating intrinsic electric field in ZnSe/BeTe II quantum well

A quantum well, molecular beam technology, applied in nanotechnology, nanotechnology, nanostructure manufacturing, etc., can solve problems such as the application of optoelectronic devices for observation of unfavorable high-density phenomena

Inactive Publication Date: 2010-05-26
SHANDONG UNIV
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the strong internal electric field in its non-doped structure, the Stark effect caused by the electric field makes the conduction band and valence band tilt, which leads to the tunneling effect of photo-induced carriers, which is not conducive to high density. Observation of phenomena and their application in optoelectronic devices

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for eliminating intrinsic electric field in ZnSe/BeTe II quantum well
  • Method for eliminating intrinsic electric field in ZnSe/BeTe II quantum well
  • Method for eliminating intrinsic electric field in ZnSe/BeTe II quantum well

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] A method for preparing a ZnSe / BeTe / ZnSe II quantum well with a special interface structure by a molecular beam epitaxy (MBE) growth method, such as Figure 1-2 As shown, the steps are as follows:

[0039] 1. Fix the (001) oriented gallium arsenide substrate on the molybdenum (Mo) sample holder with indium (In);

[0040] 2. Cool the growth chamber with liquid nitrogen, and confirm that the vacuum degree of the III-V growth chamber is 1×10 -10 After the Torr is below, the sample is transferred to the III-V growth chamber through the magnetic transfer rod; the sample holder, the K-cell container with the As solid source and the K-cell container with the Ga solid source are heated to reach The set temperatures are 300°C, 100°C and 750°C respectively;

[0041] 3. Adjust the temperature of the As source K-cell container from 100°C to 295°C, then set the temperature of the sample holder and the Ga source K-cell container to 550°C and 915°C respectively, and start to heat up ...

Embodiment 2

[0055] Embodiment 2 of the present invention is the same as Embodiment 1, except:

[0056] The growth time of the gallium arsenide buffer layer in step 5 is 38 minutes, and the growth thickness is about 320nm;

[0057] The substrate in step 9 is heated up to 330°C;

[0058] When the growth thickness of the isolation layer in step 11 is 300nm, the growth is terminated, and the Se, Be, and Mg sources are first turned off, and then the Zn source is turned off after about 7 seconds;

[0059] When the thickness of the ZnSe layer grown in step 12 is about 20ML, the growth is over, first turn off the Se source, and then turn off the Zn source after about 7 seconds, so as to form a Zn-rich surface layer;

[0060] Before the BeTe layer grows in step 13, turn on the Zn source first, turn off the Zn source after about 7 seconds, and turn on the Te source at the same time, and turn off the Te source after about 7 seconds. The above-mentioned operation of the Zn source and the Te source ...

Embodiment 3

[0064] Embodiment 3 of the present invention is the same as Embodiment 1, except:

[0065] The growth time of the gallium arsenide buffer layer in step 5 is 43 minutes, and the growth thickness is about 360nm;

[0066] The substrate in step 9 is heated up to 340°C;

[0067] When the growth thickness of the isolation layer in step 11 is 330nm, the growth is terminated, and the Se, Be, and Mg sources are first turned off, and then the Zn source is turned off after about 9 seconds;

[0068] When the thickness of the ZnSe layer grown in step 12 is about 28ML, the growth ends, first turn off the Se source, and then turn off the Zn source after about 9 seconds, so as to form a Zn-rich surface layer;

[0069] Before the growth of the BeTe layer in step 13, first turn on the Zn source, turn off the Zn source after about 9 seconds, and turn on the Te source at the same time, and turn off the Te source after about 9 seconds. The above operations of the Zn source and the Te source were...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a method for eliminating an intrinsic electric field in a ZnSe / BeTe II quantum well and belongs to the technical field of photoelectric material preparation. In the method, an II type quantum well material is prepared by the molecular beam epitaxy process; and a buffer layer, an isolation layer, a potential well-potential barrier-potential well layer and the like grow on a substrate. The quantum well material of the growth interface structure has the characteristics of high quality, good crystal lattice matching on interfaces and II type energy band structures. The material interface has large energy band head drop to make space separation easily happen on electrons and cavityvoid. Two heterojunction interfaces have a plurality of Zn-Te and Te-Zn chemical bond structures. Compared with the conventional II type energy band structure, the chemical bond structures have longer space indirect recombination luminescence service life, is more favorable for observing and researching high-density condensing phenomena, can weaken the intrinsic electric field in the structure, flattens conduction band and valence band structures, avoids tunneling effect, and is favorable for photoelectric devices to independently control positive and negative charges. The method can be used in the fields of observing the high-density phenomena, researching and manufacturing the photoelectric devices and the like.

Description

technical field [0001] The invention relates to a method for eliminating the internal electric field in a ZnSe / BeTe II type quantum well structure, in particular to a method for preparing a special interface structure by molecular beam epitaxial growth to eliminate the internal electric field. Background technique [0002] Since the electrons and holes stimulated in the type II quantum well structure are located in different adjacent quantum wells, it is easier for people to independently control their behavior, so this structure has an important role in the development and fabrication of optoelectronic devices. application. [0003] ZnSe / BeTe / ZnSe quantum wells composed of ZnSe / BeTe / ZnSe quantum wells composed of wide-bandgap compound semiconductors ZnSe (~2.8eV) and BeTe (~4.2eV) with strong covalent covalency in the II-VI group have a type-II energy band structure, and There is a large energy drop (ΔE CB : ~2.3eV, ΔE VB : ~0.8eV). This structural feature can lead to t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B82B3/00
Inventor 冀子武郑雨军赵雪琴徐现刚
Owner SHANDONG UNIV
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com