Method for preparing nano tungsten trioxide thin film

A nano-tungsten trioxide and film preparation technology, which is applied in the field of nano-tungsten trioxide film preparation, can solve the problems that the precursor sol cannot be placed for a long time, is easily converted into a gel, and reduces photocatalytic activity and photoelectric conversion performance. Reduced preparation costs, good firmness, and easy operation

Inactive Publication Date: 2010-06-16
CENT SOUTH UNIV
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

However, with the representative processes of the current sol-gel method: tungstate acidification method, tungstate ion exchange method, and alcoholization method of tungsten chloride, the obtained precursor sol cannot be placed for a long time and is easily transformed into a gel; in addition, these methods Precursors have introduced impurity ions
For example, the presence of alkali metal ions in the tungsten trioxide thin film prepared from the precursor synthesized by sodium tungstate easily makes WO 3 convert to M x WO 3 , reducing photocatalytic activity and photoelectric conversion performance

Method used

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  • Method for preparing nano tungsten trioxide thin film
  • Method for preparing nano tungsten trioxide thin film
  • Method for preparing nano tungsten trioxide thin film

Examples

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Effect test

Embodiment 1

[0030] Conductive glass substrate cleaning: Soak FTO conductive glass in KOH saturated isopropanol solution for 24 hours; rinse with distilled water; ultrasonically clean with distilled water for 30 minutes; ultrasonically clean with acetone for 30 minutes; ultrasonically clean with absolute ethanol for 30 minutes; Ultrasonic cleaning with deionized water for 30 minutes, then rinse 3 times, N 2 Blow dry and set aside.

[0031] Weigh 9.8g (NH 4 ) 6 W 7 o 24 ·6H 2 O was dissolved in 20ml of secondary deionized water, 5g of polyethylene glycol 1000 was added, the magnetic force was continuously stirred for 4h, and then a transparent precursor solution was obtained in a water bath at 80°C for 2h.

[0032] Use the dipping and pulling method to coat the film, pull the FTO conductive glass out of the prepared precursor solution at a speed of 2cm / min, let it stand for 5min, put it in an oven at 70°C to dry for 1h, and then increase the temperature at a rate of 5°C / min Rise to 50...

Embodiment 2

[0034] This example is similar to Example 1, the difference is that: Step 2) In addition to adding 5g of polyethylene glycol 1000, add 2.5g of citric acid, stir, and stand in a water bath to obtain a precursor solution, coating, and calcining to obtain nano Tungsten trioxide film. figure 2 It is the FESEM image of the prepared nano-tungsten trioxide film.

Embodiment 3

[0036] The present embodiment is similar to embodiment 1, the difference is that: step 2) weighs 9.8g (NH 4 ) 6 h 2 W 12 O·nH2 O was dissolved in 20ml of secondary deionized water, 10g of polyethylene glycol 400 and 2.5g of oleic acid were added, stirred, left standing in a water bath to obtain a precursor solution, coated, and calcined to obtain a nano-tungsten trioxide film. image 3 It is the FESEM image of the prepared nano-tungsten trioxide film.

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Abstract

The invention relates to a method for preparing a nano tungsten trioxide thin film, in particular to a method for preparing a nano tungsten trioxide thin film used for a semiconductor photoelectrode of a photocatalytic or photoelectrochemical cell. The method for synthesizing the nano tungsten trioxide thin film comprises the following steps: dissolving water-soluble poly-tungstate in water, adding dispersant and modifier to the solution to obtain precursor solution which can be saved for more than 3 months, coating the surface of a substrate with the dipping and drawing method or the spin-coating method, and calcinating the substrate at high temperature in the air to decompose organic components to obtain the nano tungsten trioxide thin film. The method for preparing the nano tungsten trioxide thin film has the characteristics of simple steps and convenient operation. The nano tungsten trioxide thin film prepared with the method has high purity and excellent photoelectric performance, can be firmly combined with the substrate and is free from the size limitation.

Description

technical field [0001] The invention relates to a method for preparing a nano-tungsten trioxide thin film, in particular to a preparation method for a nano-tungsten trioxide thin film used for a semiconductor electrode of a photocatalytic or photoelectrochemical cell. Background technique [0002] Solar photoelectrochemical cell hydrogen production (PEC) technology is based on solar energy and water, both of which are renewable. PEC technology has no by-products and will not pollute the environment, and PEC technology can be applied on a small scale and Can be developed on a large scale. Therefore, this technology is the most attractive way to produce hydrogen directly by using solar energy. [0003] The properties of the semiconductor materials that make up the photoelectrode determine the efficiency of the PEC. Since the semiconductor material has a certain selectivity to sunlight, and at the same time, it is easy to corrode at the interface with the liquid, thereby redu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03C17/23C04B41/50
Inventor 陈启元李洁李文章刘立阳
Owner CENT SOUTH UNIV
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