Method for preparing two-dimensional patterned nano-cuprous sulfide thin film

A copper sulfide, two-dimensional patterning technology, which is applied in the fields of final product manufacturing, sustainable manufacturing/processing, semiconductor/solid device manufacturing, etc. High reliability, low cost and good stability

Inactive Publication Date: 2010-06-16
LANZHOU INST OF CHEM PHYSICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although there are polymer patterned films prepared by soft etching ("Method for preparing patterned conductive polyaniline film" Chinese Patent Application No. 200310119329.1), patterned immobilized biomacromolecules ("co-patterned on the surface of inorganic silicon materials") Method for immobilizing biological macromolecules” Chinese Patent Application No. 02160334), and using the water droplet spreading method to successfully construct a three-dimensional regular pattern with a micron scale on the arrayed carbon nanotube film (“Self-Assembly of large-Scale Micropatterns on Aligned Carbon NanotubeFilm.Angew.Chem.Int.Ed.2004, 43 (9): 1146-1149), but the preparation of patterned nano-cuprous sulfide film has not been reported so far

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] (1) Hydroxylation treatment on the surface of single crystal silicon substrate

[0021] Using single-crystal silicon wafer Si(100) as the substrate, carry out hydroxylation according to the following steps: first put acetone, ethanol, and secondary water into ultrasonic cleaning for 5 minutes, and rinse thoroughly with secondary water; put the cleaned silicon wafer into Piranha Solution (V(H 2 SO 4 ): V(H 2 o 2 )=7:3), and treated at 90°C for 2h, then rinsed with deionized water, dried with nitrogen, and set aside.

[0022] (2)-OH / -NH 2 - Construction of SAMs patterned surface

[0023] Prepare a 5mM 3-aminopropyltriethoxysilane (APS) solution with n-hexane as a solvent, immerse the treated and dried monocrystalline silicon wafer in this solution, assemble it at room temperature for 3 hours, and wash it with n-hexane, two Rinse with water and blow dry with nitrogen. Place a copper grid on the silicon wafer with APS SAMs on the surface and cover it with a quartz wa...

Embodiment 2

[0027] (1) Hydroxylation treatment on the surface of single crystal silicon substrate

[0028] Same method as above

[0029] (2)-OH / -NH 2 - Construction of SAMs patterned surface

[0030] Prepare a 5mM 3-aminopropyltriethoxysilane (APS) solution with n-hexane as a solvent, immerse the treated and dried monocrystalline silicon wafer in this solution, assemble it at room temperature for 6 hours, and wash it with n-hexane, two Rinse with water and blow dry with nitrogen. Place a copper grid on the silicon wafer with APS SAMs on the surface and cover it with a quartz wafer, and then irradiate it with ultraviolet light for 3 hours. During the irradiation process, the APS SAMs in the exposed area will change into hydroxyl groups, thus obtaining -OH / -NH 2 SAMs patterned silicon surface.

[0031] (3) Preparation of patterned cuprous sulfide film

[0032] Deposition condition is identical with embodiment 1

Embodiment 3

[0034] (1) Hydroxylation treatment on the surface of single crystal silicon substrate

[0035] Method is the same as embodiment 1

[0036] (2)-OH / -NH 2 - Construction of SAMs patterned surface

[0037] Method is the same as embodiment 1

[0038] (3) Preparation of patterned cuprous sulfide film

[0039] 0.125g CuSO 4 .5H 2 O, 0.279g EDTA was dissolved in 25mL of water to form a transparent and clear solution, and 1M H 2 SO 4 Adjust the pH to 3, then add 0.124 g of Na 2 S 2 o 3 , after mixing evenly, put the patterned SAMs substrate into the solution for deposition at 80°C twice, each time for 1h. After the substrate was taken out, it was rinsed with water twice, then ultrasonically cleaned for 10 min, dried with nitrogen, and finally the Cu 2 The S film was sintered at 300°C under the protection of nitrogen.

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Abstract

The invention discloses a method for preparing a two-dimensional patterned nano-cuprous sulfide thin film. The method of combining ultraviolet lithography with chemical bath deposition is utilized in the method, EDTA is taken as a complexing agent, CuSO4.5H2O and Na2S2O3 are taken as precursor solution, and the selective deposition of cuprous sulfide nanoparticles is carried out at the temperature of 70 DEG C, thereby preparing the cuprous sulfide nano-thin film with a patterned structure.

Description

technical field [0001] The invention relates to a preparation technology of a semiconductor patterned thin film, in particular to patterned nano-Cu 2 The invention relates to a preparation method of S thin film, which belongs to the field of photoelectric material new energy technology. Background technique [0002] With the development of modern science and technology, the microfabrication or patterning of micro- and nanoscale surfaces has attracted extensive attention. Many opportunities for modern technological development arise from the successful construction of novel microstructures or the miniaturization of existing structures. The rapid development of the microelectronics industry is the direct driving force for the development of surface patterning. Not only in the microelectronics industry, but also the application of surface patterning technology in other fields is growing rapidly. For example, microanalysis of chemical and biological substances, biochips, micro...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B41/50H01L21/34H01L31/18
CPCY02P70/50
Inventor 贾均红卢永娟陈淼
Owner LANZHOU INST OF CHEM PHYSICS CHINESE ACAD OF SCI
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