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Preparation method of solar polycrystalline silicon cast ingot and device thereof

A polycrystalline silicon and solar energy technology, applied in the direction of polycrystalline material growth, chemical instruments and methods, crystal growth, etc., can solve the problems of non-reusable by-product slag phase, waste of environment, large amount of slag, etc., and achieve considerable market prospects and investment cycle. The effect of short, small device size

Inactive Publication Date: 2010-07-14
XIAMEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

U.S. Patent US 6,368,403B1 (Frederick Schmid, Chandra P.Khattak, DavidB.Joyce.Method and apparatus for purifying silicon, Patent Number US6368403B1, Apr.9, 2002) is purified by blowing slagging and other processes, mainly for B And the removal of C and O, and the removal effect is very good, but due to the large amount of slag required by this process, the cost is increased and the by-product slag phase cannot be reused, causing great waste and environmental pollution

Method used

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  • Preparation method of solar polycrystalline silicon cast ingot and device thereof
  • Preparation method of solar polycrystalline silicon cast ingot and device thereof
  • Preparation method of solar polycrystalline silicon cast ingot and device thereof

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Experimental program
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Embodiment 1

[0044] Put 200Kg of industrial silicon and 5Kg of zinc into the quartz crucible, turn on the heating power supply, energize the induction heating coil, the power is 200kW, the graphite heating sleeve will generate heat by induction, and heat the silicon and zinc in the quartz crucible , silicon and zinc begin to melt slowly as the temperature rises. When the silicon in the quartz crucible is completely melted to form a silicon-zinc alloy melt, a thermocouple temperature measuring device is used to measure the temperature of each point in the vertical direction inside the quartz crucible, and the induction heating power controller is adjusted. Start the directional solidification lifting device, and drive the quartz crucible containing the alloy melt and the graphite chassis to pull down together to produce directional solidification, and the falling speed is 10mm / h. When the alloy melt in the quartz crucible is completely solidified, cut off the current of the induction heatin...

Embodiment 2

[0046] Technological process is with embodiment 1. Put 240kg of industrial silicon and 10kg of zinc into a quartz crucible, turn on the heating power supply, and energize the induction heating coil with a power of 180kW. After all the silicon and zinc in the crucible are melted, adjust the induction heating power controller to start the directional solidification lifting device, the descending speed is 15mm / h. After the orientation process is completed, the alloy silicon ingot is taken out, and the upper 25% is cut off. The remaining part is determined to be a polycrystalline silicon ingot with a purity of 99.999611%, and the crystal grains of the silicon ingot are larger than 1.1 mm and are vertically oriented columnar crystals, and the resistivity is 0.49-1Ω·cm. figure 2 In the electrolyzer shown, the zinc is recovered by the electrolytic process, while the remaining silicon is recovered by pickling. The recovered silicon was placed in a crucible, mixed with 300 g of germ...

Embodiment 3

[0048] Technological process is with embodiment 1. Put 220kg of industrial silicon and 5kg of zinc into a quartz crucible, turn on the heating power supply, and electrify the induction heating coil with a power of 160kW. After all the silicon and zinc in the crucible are melted, adjust the induction heating power controller. Start the directional solidification lifting device, and the descending speed is 5mm / h. After the orientation process is completed, the alloy silicon ingot is taken out, and the upper 15% is cut off. The remaining part is determined to be a polycrystalline silicon ingot with a purity of 99.999396%, and the crystal grains of the silicon ingot are larger than 5mm and are vertically oriented columnar crystals, and the resistivity is 4.4·cm~5Ω·cm. figure 2 In the electrolyzer shown, the zinc is recovered by the electrolytic process, while the remaining silicon is recovered by pickling. The recovered silicon is placed in a crucible, mixed with 250 g of germa...

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Abstract

The invention discloses a preparation method of a solar polycrystalline silicon cast ingot and a device thereof, which relates to solar polycrystalline silicon, and provides a solar-grade polycrystalline silicon purification device, a preparation method of a solar polycrystalline silicon cast ingot, a zinc electrolysis recovery device and a method thereof. The purification device comprises a mainbody insulation layer, an induction heating coil, a graphite heating sleeve, a graphite fixing plate, a lower insulation layer, a directional solidification lifting device, a graphite chassis, a quartz crucible and a thermocouple temperature-measuring device. The preparation method comprises: adding polycrystalline silicon and industrial zinc into the crucible, and melting the zinc and the polycrystalline silicon to obtain silicon-zinc alloy melt; starting the lifting device, and driving the crucible and the graphite chassis for directional solidification; and when the silicon-zinc alloy meltis solidified, taking out a silicon-zinc alloy silicon ingot, and cutting off the upper part of the silicon-zinc alloy silicon ingot, thereby obtaining solar-grade polycrystalline silicon. The recovery device comprises an electrolytic tank, a rectifier, a low-level collecting tank, a heating tank, an acid-proof pump and a high-level tank. The silicon after electrolytic recovery is placed in the crucible, the doped germanium is added into a furnace; the furnace is vacuumized, the silicon material is heated to be molten; and the directionally solidified polycrystalline silicon can be obtained through directional solidification.

Description

technical field [0001] The invention relates to a solar polysilicon, in particular to a method and a device for preparing a solar polysilicon ingot. Background technique [0002] With the development of my country's economy, energy and environmental issues are becoming more and more important, which are directly related to the long-term sustainable development of our country in the future. my country is a big energy-consuming country dominated by coal and oil, but our country's per capita resources are relatively poor. On the other hand, when raw materials such as coal and petroleum are used as energy sources, serious pollution will be caused to the environment. Therefore, the development and utilization of renewable clean energy has become a very important way. Among them, solar energy is the most important clean renewable energy. Developed countries in the world attach great importance to the development and utilization of solar energy. For example, the United States ha...

Claims

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Application Information

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IPC IPC(8): C30B29/06C01B33/037C25C1/16
CPCY02P10/20
Inventor 罗学涛沈晓杰李锦堂郑淞生
Owner XIAMEN UNIV