Nano-electromechanical structure and method for the production thereof

Abstract

The invention relates to micro- and nano-electromechanical devices and to a method for the production thereof. One of the variants of the inventive method for producing a nano-electromechanical structure is based on the use of self-organising and self-alignment mechanisms, thereby unlimiting the substantial geometrical parameters thereof with respect to possibilities of traditional lithography, which makes it possible to achieve an integration degree equal to 1016 m-2 and greater. Moreover, one of the inventive aspects uses the resonance frequency of the elements in the form of an independentaddressing co-ordinate thereof,thereby making it possible to reduce the density of the required interconnections. The other aspect of the invention provides a gas sensor exhibiting a high sensitivityof the measurement of given gases or particles in the atmosphere, having multipurpose and flexible selectivity mechanisms and a controllable process of sensory ability regeneration. The inventive structure provides a simple method for measuring the resonance frequency of an oscillating element, which does not require high-frequency signal analysis.

Description

technical field [0001] The invention relates to micro-electromechanical and nano-electromechanical devices used in microelectronics, microsystems and sensor technology, and also to methods for their production. Background technique [0002] The potential of using nanostructures as functional elements is difficult to limit. For example, one interesting use of nanostructures is as the basis for mechanical resonators in signal processing systems. The resonator can replace the external circuitry of an integrated circuit filter based on a relatively bulky quartz resonator. The development trend of MEMS resonators (based on microelectromechanical systems) is based on the utilization of mechanical motion of suspended silicon beams. However, the typical dimensions of silicon beams correspond to the micrometer range, which dictates a natural oscillation frequency on the order of several megahertz. At higher frequencies, the quality factor (Q-factor) of such resonators begins to de...

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Problems solved by technology

In addition, the problem of charge leakage due to tunneling is exacerbated, among other problems, which reduce the temporal stability of the developed memory elements

However, in these cases, the developers have already used the potential of self-organization processes before even considering the fabrication of nanotubes, at various stages in the production of structures or by switching to conventional flat plates with very limited capacity. typography, or simply do not solve the problems encountered in forming the device of the proposed structure

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