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Method for preparing aluminum nitride with three-dimensional sub-micron flower-like structure

A flower-like structure, sub-micron-scale technology, applied in chemical instruments and methods, nitrogen compounds, inorganic chemistry, etc., can solve the problems of limiting the use of low-dimensional AlN semiconductor functional materials, requiring seed crystals or growth substrates, and long preparation cycles. Achieve the effect of short preparation time, uniform diameter and arrangement, and low cost

Inactive Publication Date: 2011-08-31
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these methods also have problems such as high temperature, high energy consumption, need for seed crystals or growth substrates, long preparation cycle and low yield, which severely limit the use of low-dimensional AlN semiconductor functional materials.

Method used

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  • Method for preparing aluminum nitride with three-dimensional sub-micron flower-like structure
  • Method for preparing aluminum nitride with three-dimensional sub-micron flower-like structure
  • Method for preparing aluminum nitride with three-dimensional sub-micron flower-like structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] Put 72 grams of aluminum powder, 18 grams of ammonium chloride powder, and 10 grams of aluminum nitride powder into a sealed stainless steel ball mill tank (without vacuuming) for ball milling and activation for 2 hours. The ratio of ball to material is 10:1, and the speed is 400 rpm. / point. Put the activated mixed powder into a porous graphite crucible, put the porous graphite crucible into the reaction chamber of the high-pressure combustion synthesis device, evacuate the reaction chamber until the air pressure is less than 10Pa, and then fill it with 2Mpa high-purity nitrogen gas with a purity of 99.99%; Ignite from the bottom of the powder, and energize the graphite paper tape for 10 seconds under the conditions of a voltage of 20V and a current of 60A to make the combustion reaction occur. After the reaction, a large amount of loose white powdery product, namely aluminum nitride with submicron flower-like structure, was obtained in the porous graphite crucible.

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Embodiment 2

[0026] Mix 69 grams of aluminum powder, 20 grams of ammonium chloride powder, and 11 grams of aluminum nitride powder and put them into a sealed stainless steel ball mill tank (without vacuuming) for ball milling and activation for 1 hour, the ball-to-material ratio is 10:1, and the speed is 400 rpm / point. Put the activated mixed powder into a porous graphite crucible, put the porous graphite crucible into the reaction chamber of the high-pressure combustion synthesis device, evacuate the reaction chamber until the air pressure is less than 10Pa, and then fill it with 2Mpa high-purity nitrogen gas with a purity of 99.99%; Ignite from the bottom of the powder, and energize the graphite paper tape for 10 seconds under the conditions of a voltage of 20V and a current of 60A to make the combustion reaction occur. After the reaction, a large amount of loose white powdery product, namely aluminum nitride with submicron flower-like structure, was obtained in the porous graphite cruc...

Embodiment 3

[0029] Mix 67 grams of aluminum powder, 24 grams of ammonium chloride powder and 9 grams of aluminum nitride powder and put them into a sealed stainless steel ball mill tank (without vacuuming) for ball milling and activation for 3 hours, the ratio of ball to material is 10:1, and the speed is 400 rpm / point. Put the activated mixed powder into a porous graphite crucible, put the porous graphite crucible into the reaction chamber of the high-pressure combustion synthesis device, evacuate the reaction chamber until the air pressure is less than 10Pa, and then fill it with 2Mpa high-purity nitrogen gas with a purity of 99.99%; Ignite from the bottom of the powder, and energize the graphite paper tape for 10 seconds under the conditions of a voltage of 20V and a current of 60A to make the combustion reaction occur. After the reaction, a large amount of loose white powdery product, namely aluminum nitride with submicron flower-like structure, was obtained in the porous graphite cr...

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Abstract

The invention discloses a method for rapidly preparing a semi-conductor material aluminum nitride with a three-dimensional sub-micron flower-like structure, which adopts commercial aluminum powder as an aluminum source, aluminum nitride powder as a diluent and ammonium chloride as a catalyst, and the raw materials are combusted and synthesized under the low nitrogen atmosphere after being ball milled and activated to obtain the white sub-micron flower-like structure aluminum nitride powder. The aluminum nitride sub-micron flower with controllable shape is firstly synthesized with a combustionsynthesis method. The method has simple process, good repeatability, short time, low cost and no environmental pollution. The aluminum nitride sub-micron flower-like structure material which is prepared with the method has promising prospect on the aspects such as luminous diode, laser, micro / nano electronic appliances, and the like.

Description

Technical field: [0001] The invention belongs to the technical field of preparation of semiconductor functional materials, and in particular relates to a low-cost method for preparing high-purity aluminum nitride with a three-dimensional submicron flower-like structure. Background technique: [0002] Aluminum nitride (AlN) is one of the most important Group III nitrides, because of its wide band gap, high thermal conductivity, high insulation coefficient, low dielectric constant, thermal expansion coefficient matched with silicon, excellent mechanical properties and chemical stability, etc. A series of excellent characteristics can be widely used in high-temperature electronic devices, electronic materials, light-emitting diodes (LEDs), advanced ceramic components and heat dissipation components. Because the properties of inorganic materials are closely related to their morphology, size and crystal structure, the method of synthesis control of the morphology of inorganic mat...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B21/072
Inventor 史忠旗王继平乔冠军金志浩杨建锋王红洁
Owner XI AN JIAOTONG UNIV