Silicon chip phosphorous diffusion impurity removal process for manufacturing solar cell

A technology of solar cells and phosphorus diffusion, applied in the directions of diffusion/doping, crystal growth, post-processing, etc., can solve the problem that metal impurities cannot be effectively reduced, and achieve the effect of improving light conversion efficiency and reducing content

Inactive Publication Date: 2010-10-13
ZHEJIANG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] The present invention provides a silicon wafer phosphorus diffusion gettering process for manufacturing solar cells, w

Method used

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  • Silicon chip phosphorous diffusion impurity removal process for manufacturing solar cell
  • Silicon chip phosphorous diffusion impurity removal process for manufacturing solar cell
  • Silicon chip phosphorous diffusion impurity removal process for manufacturing solar cell

Examples

Experimental program
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Example Embodiment

[0027] Example 1

[0028] (1) Take the original cast polycrystalline silicon wafer, such as figure 2 As shown in (a), after testing, the lifetime of its minority birth is about 4μs;

[0029] (2) Use a phosphorus source (p-854, Honeywell) to spin-coat the silicon wafer on both sides, and then pre-bake at 200°C for 10 minutes to remove organic matter;

[0030] (3) Pass the shielding gas (argon) into the diffusion furnace. The diffusion furnace does not need to be closed. The pressure is about 1 atmosphere. Place the baked silicon wafers in the diffusion furnace and control the temperature in the furnace to 1000℃ , Keep the temperature for 30min; then control the temperature in the furnace to 700℃, keep it for 60min, and at the same time take the silicon wafers with the same treatment and place them in a diffusion furnace with a temperature of 900℃ for 60min as a control group;

[0031] (4) Take out the silicon wafer, after cooling, use dilute HF (volume concentration 10%) to remove the...

Example Embodiment

[0033] Example 2

[0034] (1) Take the original monocrystalline silicon wafer, the lifespan of minority births is about 6μs after testing, after iron contamination, the lifespan of minority births drops to 0.4μs, such as image 3 (a) shown;

[0035] (2) Use a phosphorus source (p-854, Honeywell) to spin-coat the above-mentioned single crystal silicon wafer on both sides, and then pre-bake at 200°C for 10 minutes to remove organic matter;

[0036] (3) Pass the protective gas (argon) into the diffusion furnace. The diffusion furnace does not need a closed system. The pressure is about 1 atmosphere. The pre-baked monocrystalline silicon wafers are sent to the diffusion furnace, and the temperature in the furnace is controlled to Keep the temperature at 850°C for 30 minutes, then control the temperature in the furnace to 700°C for 90 minutes. At the same time, take the monocrystalline silicon wafers with the same treatment and place them in a diffusion furnace at a temperature of 900°C f...

Example Embodiment

[0039] Example 3

[0040] (1) Take native polysilicon wafers, such as Figure 4 As shown in (a), after testing, the lifetime of the minority birth is about 3.5μs. After iron contamination, such as Figure 4 As shown in (b), the lifetime of minority births has dropped to 0.3μs;

[0041] (2) Use a phosphorus source (p-854, Honeywell) to spin-coat the above polysilicon wafer on both sides, and then pre-baked at 200°C for 10 minutes;

[0042] (3) Pass the protective gas (argon) into the diffusion furnace. The diffusion furnace does not need a closed system. The pressure is about 1 atmosphere. The pre-baked monocrystalline silicon wafers are sent to the diffusion furnace, and the temperature in the furnace is controlled to 900℃, heat preservation for 10min, then control the furnace temperature to 650℃, heat preservation for 50min, and at the same time take the monocrystalline silicon wafer with the same treatment and place it in a diffusion furnace with a furnace temperature of 900℃ and h...

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Abstract

The invention discloses a silicon chip phosphorous diffusion impurity removal process for manufacturing a solar cell, which comprises the following steps of: coating a phosphorous source on the surface of a silicon chip or carrying POCl3 into a diffusion furnace tube by carrier gas, placing the silicon chip at the temperature of between 800 and 1,050 DEG C and preserving the heat for 10 to 60 minutes under protective atmosphere, then placing the silicon chip at the temperature of between 500 and 800 DEG C and preserving the heat for 20 to 60 minutes, cooling the silicon chip and removing a phosphorous silicon glass layer. The process can effectively reduce the metal impurity content of silicon matrix and improve the optical transformation efficiency of the solar cell by adopting a variable temperature impurity absorption mode and combining the advantages that the impurity is easily dissolved and released at the high temperature and effectively captured by an impurity absorption layer at the low temperature.

Description

technical field [0001] The invention relates to the technical field of manufacturing silicon solar cells, in particular to a silicon wafer phosphorus diffusion gettering process for manufacturing solar cells. Background technique [0002] Since entering the 21st century, with the gradual depletion of primary energy and the increasing demand for energy, human beings are facing more and more serious energy crises. The development and utilization of renewable energy has become the hope to solve the human energy crisis. Among all renewable energy sources, solar energy is a widely distributed and inexhaustible clean energy source with great application prospects. Solar cells are semiconductor devices that convert solar energy into electricity without producing any pollution. Therefore, the development and utilization of solar cells has become a research hotspot worldwide. [0003] At present, crystalline silicon is the most important solar cell material, with a market share of...

Claims

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Application Information

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IPC IPC(8): C30B31/04
Inventor 杨德仁李晓强余学功
Owner ZHEJIANG UNIV
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