Silicon chip phosphorous diffusion impurity removal process for manufacturing solar cell
A technology of solar cells and phosphorus diffusion, applied in the directions of diffusion/doping, crystal growth, post-processing, etc., can solve the problem that metal impurities cannot be effectively reduced, and achieve the effect of improving light conversion efficiency and reducing content
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[0027] Example 1
[0028] (1) Take the original cast polycrystalline silicon wafer, such as figure 2 As shown in (a), after testing, the lifetime of its minority birth is about 4μs;
[0029] (2) Use a phosphorus source (p-854, Honeywell) to spin-coat the silicon wafer on both sides, and then pre-bake at 200°C for 10 minutes to remove organic matter;
[0030] (3) Pass the shielding gas (argon) into the diffusion furnace. The diffusion furnace does not need to be closed. The pressure is about 1 atmosphere. Place the baked silicon wafers in the diffusion furnace and control the temperature in the furnace to 1000℃ , Keep the temperature for 30min; then control the temperature in the furnace to 700℃, keep it for 60min, and at the same time take the silicon wafers with the same treatment and place them in a diffusion furnace with a temperature of 900℃ for 60min as a control group;
[0031] (4) Take out the silicon wafer, after cooling, use dilute HF (volume concentration 10%) to remove the...
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[0033] Example 2
[0034] (1) Take the original monocrystalline silicon wafer, the lifespan of minority births is about 6μs after testing, after iron contamination, the lifespan of minority births drops to 0.4μs, such as image 3 (a) shown;
[0035] (2) Use a phosphorus source (p-854, Honeywell) to spin-coat the above-mentioned single crystal silicon wafer on both sides, and then pre-bake at 200°C for 10 minutes to remove organic matter;
[0036] (3) Pass the protective gas (argon) into the diffusion furnace. The diffusion furnace does not need a closed system. The pressure is about 1 atmosphere. The pre-baked monocrystalline silicon wafers are sent to the diffusion furnace, and the temperature in the furnace is controlled to Keep the temperature at 850°C for 30 minutes, then control the temperature in the furnace to 700°C for 90 minutes. At the same time, take the monocrystalline silicon wafers with the same treatment and place them in a diffusion furnace at a temperature of 900°C f...
Example Embodiment
[0039] Example 3
[0040] (1) Take native polysilicon wafers, such as Figure 4 As shown in (a), after testing, the lifetime of the minority birth is about 3.5μs. After iron contamination, such as Figure 4 As shown in (b), the lifetime of minority births has dropped to 0.3μs;
[0041] (2) Use a phosphorus source (p-854, Honeywell) to spin-coat the above polysilicon wafer on both sides, and then pre-baked at 200°C for 10 minutes;
[0042] (3) Pass the protective gas (argon) into the diffusion furnace. The diffusion furnace does not need a closed system. The pressure is about 1 atmosphere. The pre-baked monocrystalline silicon wafers are sent to the diffusion furnace, and the temperature in the furnace is controlled to 900℃, heat preservation for 10min, then control the furnace temperature to 650℃, heat preservation for 50min, and at the same time take the monocrystalline silicon wafer with the same treatment and place it in a diffusion furnace with a furnace temperature of 900℃ and h...
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