Preparation method of nanometer cordierite-based ceramic dielectric material used for high-frequency chip inductor

A ceramic medium and cordierite technology, which is applied in the field of inorganic non-metallic materials and industrial functional ceramics, can solve the problems of irregular and uniform powder particle size distribution, unfavorable low-temperature co-firing, high degree of powder agglomeration, etc., and achieve regular shape Uniformity, high powder surface activity, high surface activity effect

Inactive Publication Date: 2010-11-10
SHENYANG UNIV
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

The synthesis temperature of the molten glass method and the solid-state sintering method is 1400-1450°C, which is close to the melting point of cordierite, and the sintering temperature is narrow, about 25°C, which is easy to overfire, and is not conducive to low-temperature co-firing with

Method used

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  • Preparation method of nanometer cordierite-based ceramic dielectric material used for high-frequency chip inductor
  • Preparation method of nanometer cordierite-based ceramic dielectric material used for high-frequency chip inductor
  • Preparation method of nanometer cordierite-based ceramic dielectric material used for high-frequency chip inductor

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Embodiment 1

[0020] A preparation method of nano cordierite-based ceramic dielectric material for high-frequency chip inductors includes the following steps:

[0021] 1. Preparation of magnesium aluminum silica sol: according to cordierite (Mg 2 Al 4 Si 5 O 18 ), the stoichiometric ratio of aluminum nitrate nonahydrate (Al(NO 3 ) 3 ·9H 2 O), magnesium nitrate hexahydrate (Mg(NO 3 ) 2 ·6H 2 O) Add to water, place on a magnetic stirrer and stir vigorously. Maintain the temperature at 50°C. Stir for 30 minutes to completely dissolve. Add TEOS and continue stirring to obtain a colorless transparent liquid; then dissolve in 20% Bismuth trioxide (Bi 2 O 3 ) Is added to the above colorless and transparent liquid, adjusted the PH value to 1, and stirred until uniform and transparent, to obtain a magnesium aluminum silica sol.

[0022] 2. Preparation of reversed phase (W / O) microemulsion: Triton-100 is used as surfactant, n-hexanol is used as co-surfactant, the mass ratio of Triton-100 to n-hexanol is 2,...

Embodiment 2

[0026] A preparation method of nano cordierite-based ceramic dielectric material for high-frequency chip inductors includes the following steps:

[0027] 1. Preparation of magnesium aluminum silica sol: according to cordierite (Mg 2 Al 4 Si 5 O 18 ), the stoichiometric ratio of aluminum nitrate nonahydrate (Al(NO 3 ) 3 ·9H 2 O), magnesium nitrate hexahydrate (Mg(NO 3 ) 2 ·6H 2 O) Add to water, place it on a magnetic stirrer and stir vigorously. Maintain the temperature at 55°C. Stir for 35 minutes to completely dissolve. Add TEOS and continue stirring to obtain a colorless transparent liquid; then dissolve in 20% Bismuth trioxide (Bi 2 O 3 ) Is added to the colorless and transparent liquid, adjusted to pH 2, and stirred until uniform and transparent, to obtain a magnesium aluminum silica sol.

[0028] 2. Preparation of reverse phase (W / O) microemulsion: Triton-100 is used as surfactant, n-hexanol is used as co-surfactant, the mass ratio of Triton-100 to n-hexanol is 2.5, and cyclohe...

Embodiment 3

[0032] A preparation method of nano cordierite-based ceramic dielectric material for high-frequency chip inductors includes the following steps:

[0033] 1. Preparation of magnesium aluminum silica sol: according to cordierite (Mg 2 Al 4 Si 5 O 18 ), the stoichiometric ratio of aluminum nitrate nonahydrate (Al(NO 3 ) 3 ·9H 2 O), magnesium nitrate hexahydrate (Mg(NO 3 ) 2 ·6H 2 O) Add to water, place it on a magnetic stirrer and stir vigorously. Maintain the temperature at 55°C. Stir for 30 minutes until it is completely dissolved. Add TEOS and continue stirring to obtain a colorless transparent liquid; then dissolve in 25% Bismuth trioxide (Bi 2 O 3 ) Is added to the above colorless and transparent liquid, adjusted to a pH of 2.5, and stirred until uniform and transparent, to obtain a magnesium aluminum silica sol.

[0034] 2. Preparation of reverse phase (W / O) microemulsion: use Triton-100 as surfactant, n-hexanol as auxiliary surfactant, mass ratio of Triton-100 to n-hexanol is 3,...

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Abstract

The invention relates to a preparation method of a nanometer cordierite-based ceramic dielectric material used for a high-frequency chip inductor, which comprises the following steps of: (1) preparing magnesia-alumina-silica sol; (2) preparing opposite-phase W/O (water-in-oil) microemulsion; (3) performing gelation technology; and (4) pressing amorphous cordierite powder obtained in the above steps by adopting a semi-dry method under the pressure of 100-120 MPa to form small wafers, sintering the small wafers at 850-1050 DEG C in a silicon-molybdenum rod resistor furnace, and maintaining the temperature for 3-6 hours to obtain the nanometer cordierite-based ceramic dielectric material used for the high-frequency chip inductor. The invention has the advantages of regular and uniform nanometer powder shape, high powder surface activity and low degree of aggregation, and is applicable to tape casting. The material can be cofired together with an Ag/Pd electrode at the temperature lower than 950 DEG C to be prepared into ceramics, and the dielectric requirements (epsilon<5, and tg delta<0.001; 1 GHz) and the thermal expansion requirements (3*10<-6>K<-1><=alpha<=6*10<-6>K<-1>, 25-300 DEG C) of the dielectric material used for the high-frequency chip inductor can be met.

Description

Technical field [0001] The invention belongs to the field of inorganic non-metallic materials, and relates to a preparation method of nano cordierite-based ceramic dielectric materials for high-frequency chip inductors. The material can be applied to the field of high-frequency chip inductors and other electronic components and ideal dielectric materials for high-frequency ceramic packaging, and belongs to the technical field of industrial functional ceramics. Background technique [0002] At present, there are mainly three types of low-fire dielectric materials used in chip inductors: (1) Ferrite dielectrics with frequencies below 300MHz; (2) Ceramic materials with low dielectric constants in the high-frequency range (500Hz~2GHz) Composite with ferrite; (3) Applied to ceramic dielectric materials with low dielectric loss (ε<5, tgδ<0.001; 1GHz) in the ultra-high frequency range (2~5GHz). [0003] Traditional multilayer chip inductor materials mostly use soft magnetic ferrite...

Claims

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Application Information

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IPC IPC(8): C04B35/195C04B35/622
Inventor 王少洪陆浩然侯朝霞胡小丹牛厂磊薛召露王浩
Owner SHENYANG UNIV
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