Unlock instant, AI-driven research and patent intelligence for your innovation.

Solid tantalum electrolytic capacitor and preparation method thereof

A tantalum electrolytic capacitor and solid technology, applied in the field of solid tantalum electrolytic capacitors and their preparation, can solve problems such as poor conductivity, and achieve the effects of increasing conductivity, reducing resistance, and reducing leakage current

Inactive Publication Date: 2010-12-15
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF5 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Although manganese dioxide is regarded as a potential capacitor electrode material, manganese dioxide has poor conductivity and has been replaced by some organic compounds with higher conductivity than manganese dioxide. The electrolyte resistance R has a great influence on the high frequency characteristics of the capacitor, therefore, it is necessary to use a higher conductivity electrolyte to increase the performance of the capacitor

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Solid tantalum electrolytic capacitor and preparation method thereof
  • Solid tantalum electrolytic capacitor and preparation method thereof
  • Solid tantalum electrolytic capacitor and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] based on figure 1 Be explained. Wherein, the conductive layer 3 is a mixed system of carbon nanotube array and polyaniline whose length direction is perpendicular to the surface of the tantalum anode body, wherein the height of the carbon nanotube array is 20 μm.

[0034] The preparation method is as follows:

[0035] ① Press nano-tantalum metal particles into blocks, plant cylindrical tantalum wires in the formation of tantalum particles, and sinter them into porous tantalum anode bodies under high temperature and vacuum conditions;

[0036] ② Anodize the sintered tantalum anode body to form a layer of Ta on its surface 2 o 5 Dielectric coating;

[0037] ③Ta 2 o 5 The micropores of the dielectric film are used as templates, and the carbon nanotube array is prepared by chemical vapor deposition, and the length direction of the carbon nanotubes is perpendicular to the surface of the tantalum anode body;

[0038] ④Uniformly disperse the oxidizing agent and the poly...

Embodiment 2

[0047] The conductive layer 3 is a mixed system of carbon nanotube array and polythiophene whose length direction is perpendicular to the surface of the tantalum anode body, wherein the height of the carbon nanotube array is 30 μm.

[0048] The preparation method is as follows:

[0049] ① Press nano-tantalum metal particles into blocks, plant cylindrical tantalum wires in the formation of tantalum particles, and sinter them into porous tantalum anode bodies under high temperature and vacuum conditions;

[0050] ② Anodize the sintered tantalum anode body to form a layer of Ta on its surface 2 o 5 Dielectric coating;

[0051] ③Ta 2 o 5 The micropores of the dielectric film are used as templates, and the carbon nanotube array is prepared by chemical vapor deposition, and the length direction of the carbon nanotubes is perpendicular to the surface of the tantalum anode body;

[0052] ④Uniformly disperse the oxidizing agent and polythiophene monomer in the mixed solution, and ...

Embodiment 3

[0057] The conductive layer 3 is a mixed system of carbon nanotube array and polypyrrole whose length direction is perpendicular to the surface of the tantalum anode body, wherein the height of the carbon nanotube array is 40 μm.

[0058] The preparation method is as follows:

[0059] ① Press nano-tantalum metal particles into blocks, plant cylindrical tantalum wires in the formation of tantalum particles, and sinter them into porous tantalum anode bodies under high temperature and vacuum conditions;

[0060] ② Anodize the sintered tantalum anode body to form a layer of Ta on its surface 2 o 5 Dielectric coating;

[0061] ③Ta 2 o 5 The micropores of the dielectric film are used as templates, and the carbon nanotube array is prepared by chemical vapor deposition, and the length direction of the carbon nanotubes is perpendicular to the surface of the tantalum anode body;

[0062] ④Uniformly disperse the oxidizing agent and polypyrrole monomer in the mixed solution, and then...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Heightaaaaaaaaaa
Heightaaaaaaaaaa
Heightaaaaaaaaaa
Login to View More

Abstract

The invention discloses a solid tantalum electrolytic capacitor, which comprises a tantalum anode body, a Ta2O5 (tantalum pentoxide) dielectric envelop positioned on the surface of the tantalum anode body, a conducting layer positioned on the Ta2O5 dielectric envelop, and a graphite layer and a silver layer coated on the conducting layer. The solid tantalum electrolytic capacitor is characterized in that: the conducing layer is a mixed system of a carbon nanotube array with the length direction vertical to the surface of the tantalum anode body and a conducting high polymer material; and the directionally arranged carbon nanotube array is grown by taking micropores on the Ta2O5 dielectric envelop as a template. The directionally arranged magnetic carbon nanotubes are adopted in the conducting layer, the conductivity of the conducing layer is improved, the equivalent series resistance of the capacitor is reduced, and the high frequency characteristic of the capacity is improved; meanwhile, the carbon nanotubes have good thermal conductivity, so the capacitor has higher high-temperature resistance, the service life of the capacitor is prolonged, and the leakage current is reduced.

Description

technical field [0001] The invention relates to the technical field of capacitors, in particular to a solid tantalum electrolytic capacitor and a preparation method thereof. Background technique [0002] In recent years, with the downsizing and weight reduction of electronic devices, small and high-capacity high-frequency capacitors are required, so solid electrolytic capacitors in which a solid electrolytic layer is formed of a solid conductive compound have been proposed. [0003] A solid electrolytic capacitor includes, for example, an Al (aluminum) or Ta (tantalum) metal anode body, a dielectric oxide film formed by oxidation treatment on the surface of the anode body, and a solid conductive compound such as MnO 2 (manganese dioxide), conductive high molecular polymer to the oxide film, and the cathode layer in close contact with the oxide film. Compared with paper dielectric capacitors and film capacitors, electrolytic capacitors are smaller in size and higher in capac...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01G9/15H01G9/025H01G9/028
Inventor 于军胜崔立强邢国秀蒋亚东
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA