GaN-based light emitting diode and preparation method thereof
A light-emitting diode, gallium nitride-based technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of total reflection loss of light emission, limitation of light emission efficiency, etc., to reduce the impact, enhance the light output efficiency, and improve the electro-optic conversion efficiency. Effect
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[0042] Example one
[0043] See figure 1 As shown, a gallium nitride-based light-emitting diode, its preparation method includes the following steps:
[0044] (1) Growing buffer layer 2 and intrinsic GaN layer 31 and N-type doped GaN on a substrate 1, such as a flat sapphire substrate, a patterned sapphire substrate, a gallium nitride substrate, a silicon carbide substrate or a silicon substrate The epitaxial layer 32; the total thickness of the intrinsic GaN layer and the N-type doped GaN epitaxial layer is 3-7μm, depending on the substrate type;
[0045] (2) Using reactive ion etching, holographic exposure or electron beam exposure to prepare an N-type GaN patterned template structure on the N-type doped GaN epitaxial layer; the N-type GaN patterned template structure is a continuous yurt shape, The diameter and height of the yurt and the distance between adjacent yurts are matched with each other, and its magnitude extends from nanometers to micrometers;
[0046] (3) Epitaxial I...
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