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Method for preparing selective emitting electrode structure of crystalline silicon solar cell

A solar cell and selective technology, applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problems of inconsistent sensitivity of acidic solutions, impossibility of very uniform chemical properties, and easy residues, etc., to achieve cleaning methods to remove clean, The effect of rapid reaction without residue and simple cleaning method

Active Publication Date: 2013-04-24
CSI CELLS CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this method has the following problems: since the prepared silicon nitride film usually does not satisfy the stoichiometric ratio of Si:N=3:4, its chemical properties cannot be very uniform, and its sensitivity to acidic solutions is not consistent. Therefore, at present, it is difficult to completely remove it with solutions such as hydrofluoric acid or phosphoric acid.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] A method for preparing a selective emitter structure of a crystalline silicon solar cell, comprising the steps of:

[0025] (1) Chemical cleaning removes the damaged layer on the surface of the silicon wafer and forms an anti-reflection surface texture;

[0026] (2) Metal chemical organic vapor deposition (MOCVD) deposits ZnO thin film at 400 °C with a thickness of 120 nm;

[0027] (3) screen-print the acidic paste, bake at 140°C for 2 minutes, and corrode to form the electrode window area;

[0028] (4) Ultrasonic cleaning with pure water and drying;

[0029] (5) in POCl 3 Diffusion with high concentration in the atmosphere, forming heavily doped N in the electrode window area + Area;

[0030] (6) Clean with hydrochloric acid and hydrofluoric acid mixed acid, remove zinc oxide film and phosphosilicate glass layer;

[0031] (7) in POCl 3 Low-concentration diffusion is carried out in the atmosphere to form a lightly doped N region; that is, the selective emitter str...

Embodiment 2

[0033] A method for preparing a selective emitter structure of a crystalline silicon solar cell, comprising the steps of:

[0034] (1) Chemical cleaning removes the damaged layer on the surface of the silicon wafer and forms an anti-reflection surface texture;

[0035] (2) in POCl 3 Low-concentration diffusion in the atmosphere to form a lightly doped N region;

[0036] (3) grow ZnO film by magnetron sputtering at room temperature, with a thickness of 150nm;

[0037] (4) screen-print the acidic slurry, bake at 150°C for 3 minutes, and corrode to form the electrode window area;

[0038] (5) Pure water ultrasonic plus spray cleaning and drying;

[0039] (6) in POCl 3 Diffusion with high concentration in the atmosphere, forming heavily doped N in the electrode window area + Area;

[0040] (7) Cleaning with mixed acid of hydrochloric acid and hydrofluoric acid to remove the zinc oxide film and the phosphosilicate glass layer; that is, the selective emitter structure is obtai...

Embodiment 3

[0042] A method for preparing a selective emitter structure of a crystalline silicon solar cell, comprising the steps of:

[0043] (1) Chemical cleaning removes the damaged layer on the surface of the silicon wafer and forms an anti-reflection surface texture;

[0044] (2) Multiple times of sol-gel spin coating, and baked and decomposed at 200°C to obtain a ZnO film with a thickness of 80nm;

[0045] (3) Spray and print (Inkjet printing) acidic solution, bake at 120°C for 2 minutes, and corrode to form the electrode window area;

[0046] (4) Pure water ultrasonic plus spray cleaning and drying;

[0047] (5) in POCl 3 Diffusion with high concentration in the atmosphere, forming heavily doped N in the electrode window area + region, while forming a shallow doped N region in the non-electrode region;

[0048] (6) Washing with mixed acid of hydrochloric acid and hydrofluoric acid to remove the zinc oxide film and the phosphosilicate glass layer to obtain the selective emitter ...

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Abstract

The invention relates to a method for preparing a selective emitting electrode structure of a crystalline silicon solar cell, comprising the following steps: evenly depositing a zinc oxide film on the texture of a crystal silicon wafer; then using the chemical corrosion method to form an electrode window on the zinc oxide film by corrosion; and then preparing the heavy doping region and the lightdoping region of the selective emitting electrode structure by the electrode window. The zinc oxide film of the invention has the advantages of low preparation temperature, fast growth speed, simple cleaning method and clean removal, thus being suitable for mass production of the selective emitting electrode crystalline silicon solar cell.

Description

technical field [0001] The invention relates to a preparation method of a crystalline silicon solar cell, in particular to a preparation method of a selective emitter structure of a crystalline silicon solar cell. Background technique [0002] In today's world, the continuous use of conventional energy has brought about a series of economic and social problems such as energy shortage and environmental degradation, and the development of solar cells is one of the ways to solve the above problems. Therefore, all countries in the world are actively developing solar cells, and high conversion efficiency and low cost are the main trends in the development of solar cells and the goals pursued by technology researchers. [0003] At present, among all kinds of solar cells, crystalline silicon solar cells account for 90% of the market share, among which the conversion efficiency of monocrystalline silicon cells exceeds 17%, and the conversion efficiency of polycrystalline silicon cel...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 吴坚王栩生章灵军
Owner CSI CELLS CO LTD
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