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Dielectric and pressure sensitive ceramic material of low-temperature sintering oxide and preparation method thereof

A technology of oxide ceramics and boron compounds, applied in the field of material science, can solve problems such as dielectric constant less than 100, low relative dielectric constant, and no obvious advantages, and achieve good dielectric constant, high dielectric constant, low Effect of Dielectric Loss

Inactive Publication Date: 2011-01-26
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, ZnO and TiO are mostly used in pressure sensitive devices 2 Base pressure-sensitive materials have high nonlinear coefficient but relatively low relative permittivity, and have no obvious advantage in absorbing surge energy to prevent it from damaging equipment
And high dielectric materials, such as SrTiO 3 etc., although its dielectric constant can reach 10 4-5 , but the preparation process is complex and difficult to control
In addition, in terms of low-temperature sintering, although the microwave material obtained by sintering at 950°C is a relatively mature process, its dielectric constant is less than 100.

Method used

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  • Dielectric and pressure sensitive ceramic material of low-temperature sintering oxide and preparation method thereof
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  • Dielectric and pressure sensitive ceramic material of low-temperature sintering oxide and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] According to Ca 0.5 Cu 0.5 TiO 3 With the ratio of 100:1.5 to B element, weigh H 3 BO 3 , Ca(NO 3 ) 2 4H 2 O, Cu(NO 3 ) 2 ·3H 2 O, [CH 3 (CH 2 ) 3 O] 4 Ti and C 6 h 8 o 7 ·H 2 O was dissolved in alcohol, stirred at room temperature for 3 hours and then left to stand for 24 hours to obtain a sol-gel, which was expanded and foamed and crushed, and sintered in air at 900°C for 2 hours to complete the phase formation stage of the material phase. Then, through granulation, dry pressing at 4Mpa, and sintering in air at 1000°C for 3 hours, the Cu-CTO-B1 ceramic material was obtained.

[0031] figure 1 It is the X-ray diffraction analysis (XRD) test result of this embodiment product, as can be seen from the figure, the phase is CaTiO 3 and CCTO (CaCu 3 Ti 4 o 12 ) complex phase structure. At room temperature, in the range of 1KHz to 1MHz in the external electric field, the relative permittivity ε is between 800 and 1100, and the dielectric loss tanδ-0.1, ...

Embodiment 2

[0033] According to Ca 0.5 Cu 0.5 TiO 3 With the ratio of 100:4 to B element, weigh H 3 BO 3 , Ca(NO 3 ) 2 4H 2 O, Cu(NO 3 ) 2 ·3H 2 O, [CH 3 (CH 2 ) 3 O] 4 Ti and C 6 h 8 o 7 ·H 2 O was dissolved in alcohol, stirred at room temperature for 5 hours and then left to stand for 36 hours to obtain a sol-gel, which was expanded and foamed and crushed, and sintered in air at 900°C for 2 hours to complete the phase formation stage of the material phase. Then, through granulation, dry pressing at 4Mpa, and sintering in air at 1000°C for 3 hours to obtain Cu-CTO-B2 ceramic material.

[0034] Figure 4 It is the X-ray diffraction analysis (XRD) test result of this embodiment product, as can be seen from the figure, the phase is CaTiO 3 and the complex phase structure of CCTO. At room temperature, in the range of 1KHz to 1MHz in the external electric field, the relative permittivity ε is 800, and the dielectric loss tanδ ~ 0.1, such as Figure 5 shown.

Embodiment 3

[0036] According to Ca 0.5 Cu 0.5 TiO 3 With the ratio of 100:7.5 to B element, weigh H 3 BO 3 , Ca(NO 3 ) 2 4H 2 O, Cu(NO 3 ) 2 ·3H 2 O, [CH 3 (CH 2 ) 3 O] 4 Ti and C 6 h 8 o 7 ·H 2 O was dissolved in alcohol, stirred at room temperature for 8 hours and then left to stand for 48 hours to obtain a sol-gel, which was expanded and foamed and crushed, and then sintered in air at 900°C for 2 hours to complete the material. Phase formation stage. Then, through granulation, dry pressing at 4Mpa, and sintering in air at 1000°C for 3 hours to obtain Cu-CTO-B3 ceramic material.

[0037] Figure 6 It is the X-ray diffraction analysis (XRD) test result of this embodiment product, as can be seen from the figure, the phase is CaTiO 3 and the complex phase structure of CCTO. Figure 7 It is the SEM image of the product, and it can be seen that the obtained product is very compact and has a very low porosity. At room temperature, in the range of 1KHz to 1MHz in the exte...

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Abstract

The invention discloses a dielectric and pressure sensitive ceramic material of a low-temperature sintering oxide and a preparation method thereof. The method comprises the following steps of: 1) mixing a calcium salt, a copper salt, a titanium salt and a boracic compound with an organic acid for the sol-gel reaction and performing the first sintering for the product after reaction; and 2) performing granulation, formation and second sintering for the product sintered in the step 1) to obtain the target product. The pressure sensitive and high dielectric ceramic material of the low-temperature sintering oxide is a pressure sensitive Cu-doped CaTiO3 based low temperature sintering ceramic material. The material has nonlinear ohmic characteristics as well as high dielectric constant and low dielectric loss. In a wide range of temperature, the sample has good high dielectric constant, frequency stability of low dielectric loss and good pressure sensitive nonlinearity and is environmental friendly without toxic elements such as Bi, Pb and the like and is a novel pressure sensitive and high dielectric ceramic material with a wide application prospect.

Description

technical field [0001] The invention belongs to the field of material science, and relates to an oxide ceramic material and a preparation method thereof, in particular to a low-fired oxide dielectric voltage-sensitive ceramic material and a preparation method thereof. Background technique [0002] High dielectric ceramics are very important oxide functional ceramic materials. The selection of high-dielectric ceramics helps electronic components to move towards miniaturization, integration, chip type, and high reliability, so as to adapt to the rapid development of electronic information technology. Varistor ceramics refer to semiconductor ceramics with nonlinear volt-ampere characteristics, which have received extensive attention in recent years. Its volt-ampere characteristics can be directly applied to the manufacture of non-linear resistors and the protection of high-voltage devices. When the material has both high dielectric and varistor characteristics, the varistor p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/465C04B35/624H01C7/10
Inventor 林元华袁健聪南策文
Owner TSINGHUA UNIV