Method for preparing high-purity molybdenum titanium sputtering target

A molybdenum sputtering target, high-purity technology, applied in sputtering coating, metal material coating process, ion implantation coating and other directions, can solve the problem of difficulty in preparing large-sized molybdenum sputtering target The density is not easy to control, the process and operation are complicated, etc., to achieve the effect of low cost, low equipment requirements, and high purity

Inactive Publication Date: 2011-01-26
JINDUICHENG MOLYBDENUM CO LTD
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Problems solved by technology

The disadvantage of this method is that the equipment cost is high, the process and operation are relatively complicated, the density of the obtained ta

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  • Method for preparing high-purity molybdenum titanium sputtering target

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preparation example Construction

[0020] A method for preparing a high-purity molybdenum sputtering target. The preparation process uses ammonium dodecamolybdate as a raw material, and high-purity molybdenum powder is prepared by two-stage hydrogen reduction, and then the high-purity molybdenum powder is cold isostatically pressed Molybdenum slab green body, then vacuum pre-sintering, and then sintering at high temperature under hydrogen atmosphere to make high-purity molybdenum slab; finally, the sintered high-purity molybdenum slab is processed into molybdenum molybdenum by forging first and then rolling. The target blank, after vacuum annealing, is then machined into a finished molybdenum sputtering target according to the specified specifications.

[0021] During operation, ammonium dodecamolybdate with regular hexagonal prism shape, uniform size and no agglomeration is used as the raw material, and the K content is controlled to be 2-5ppm, the Fe content is 3-7ppm, and the Ni content is less than or equal ...

Embodiment 1

[0026] Ammonium dodecamolybdate with regular hexagonal column shape, uniform size and no agglomeration is used as raw material ( figure 1 ), the control K content is 5ppm, the Fe content is 7ppm, and the Ni content is 2ppm. It is subjected to two-stage hydrogen reduction in a hydrogen reduction furnace, and the reduction process is carried out according to the reduction process of conventional molybdenum powder. During the reduction process, molybdenum boats are used for the boats, and the inner surface of the reduction furnace tube is inlaid with molybdenum bushings. The purity of the prepared molybdenum powder is 99.99wt%.

[0027] The molybdenum powder is pressed into a molybdenum plate green body by cold isostatic pressing, the pressing pressure is 180 MPa, and the holding time is 10 minutes. Then the molybdenum plate green body is vacuum pre-fired, the pre-fired temperature is 1400 ℃, and the vacuum degree is 10 -3 Pa, the holding time is 1 hour; the pre-fired molybden...

Embodiment 2

[0031] Ammonium dodecamolybdate with regular hexagonal column shape, uniform size and no agglomeration is used as raw material ( image 3 ), the control K content is 2ppm, the Fe content is 3ppm, and the Ni content is less than 1ppm. It is subjected to two-stage hydrogen reduction in a hydrogen reduction furnace, and the reduction process is carried out according to the reduction process of conventional molybdenum powder. During the reduction process, molybdenum boats are used for the boats, and the inner surface of the reduction furnace tube is inlaid with molybdenum bushings. The purity of the prepared molybdenum powder is 99.992wt%.

[0032] The molybdenum powder is pressed into a molybdenum plate green body by cold isostatic pressing, the pressing pressure is 200 MPa, and the holding time is 20 minutes. Then the molybdenum plate green body is vacuum pre-fired, the pre-fired temperature is 1200 ℃, and the vacuum degree is 10 -4 Pa, the holding time is 2 hours; the pre-fi...

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Abstract

The invention discloses a method for preparing high-purity molybdenum titanium sputtering targets, and relates to a method for preparing molybdenum titanium sputtering targets used in the electronic and photovoltaic field, which is characterized in that the preparation process comprises the following steps: taking ammonium dodecamolybdate as a raw material, preparing high-purity molybdenum powder through two sections of a hydrogen reductive method; carrying out cold isostatic pressing on the high-purity molybdenum powder to press into a molybdenum plate green body; presintering in vacuum; sintering into a molybdenum plate at high temperature at the atmosphere of hydrogen; processing the sintered molybdenum plate into a molybdenum target body by adopting a pressure processing manner of firstly forging and then rolling; vacuum annealing to process into the finished product of molybdenum titanium sputtering target according to a specific specification machine. The preparation method of the invention has low cost, simple operation and low equipment requirements; the prepared molybdenum titanium sputtering target has high purity, low impurity content, high density, uniform particle size and specific crystallization orientation.

Description

technical field [0001] The invention discloses a preparation method of a high-purity molybdenum sputtering target, relating to a preparation method of a molybdenum sputtering target used in the fields of electronics and photovoltaics. Background technique [0002] In the field of electronics and photovoltaics, molybdenum sputtering targets are mainly used as electrodes and wiring materials for flat panel displays and thin film solar cells. Its requirements for molybdenum sputtering targets are high purity (>99.95wt%), high density (relative density>98%), fine and uniform grain structure and certain crystallographic orientation, and it is suitable for C, O, K and other gases Elements and alkali metal elements require the lower the content, the better. [0003] In order to improve the purity of the molybdenum sputtering target, some enterprises at home and abroad adopt the method of electron beam melting. This method is costly and complicated to operate, and the smelte...

Claims

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Application Information

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IPC IPC(8): C23C14/14C23C14/34B22F9/22B22F3/16
Inventor 安耿刘仁智李晶历学武
Owner JINDUICHENG MOLYBDENUM CO LTD
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