Method for preparing lanthanum-strontium-manganese-oxygen film

A technology of lanthanum strontium manganese oxide film and strontium acetate, which is applied in the field of magnetic film preparation, can solve problems such as cracks on the surface of the film and environmental pollution, and achieves the effects of small roughness, small environmental pollution and good uniformity

Active Publication Date: 2011-03-16
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But so far, although there are reports in the literature on the preparation of lanthanum strontium manganese oxide thin films on Si substrates by chemical solution method, metal alkoxides (more toxic) or nitrates (which will release nitrogen oxides when heated and decomposed) are basically used. substance) as the solute, methanol, ethylene glycol, and methyl ether toxic reagents as the solvent, there are serious environmental pollution defects, and there are cracks on the surface of the grown film

Method used

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  • Method for preparing lanthanum-strontium-manganese-oxygen film
  • Method for preparing lanthanum-strontium-manganese-oxygen film
  • Method for preparing lanthanum-strontium-manganese-oxygen film

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Embodiment 1

[0045] A. Preparation of precursor solution

[0046] Dissolve the three solutes of lanthanum acetate, strontium acetate and manganese acetate with a molar ratio of 7:3:10 in a mixed solvent formed by acetic acid (CH3COOH) and deionized water with a volume ratio of 4:1, and heat to 60-80°C The solute is completely dissolved, and the concentration of the solution is 0.15mol / L; the obtained transparent yellow solution is left to stand at room temperature for 48 to 72 hours; it is filtered with a 0.2 μm microporous membrane to obtain stable lanthanum strontium manganese oxide ( LSMO) precursor solution;

[0047] B. Preparation of thin film materials

[0048] Add the prepared precursor solution dropwise onto the cleaned silicon substrate rotating at a high speed, the substrate speed is 5000 rpm, and keep it for 30 seconds, the solvent evaporates quickly to obtain a gel film; place the gel film in an annealing furnace Carry out heat treatment in stages, that is: first keep warm at...

Embodiment 2

[0050] The difference between this embodiment and embodiment 1 is that the final annealing temperature is 750° C., and the rest of the content is exactly the same as that described in embodiment 1. The thickness of the obtained lanthanum strontium manganese oxide thin film is close to that of Example 1.

Embodiment 3

[0052]The difference between this example and Example 1 lies in that the final annealing temperature is 750° C., the annealing time is 60 minutes, and the rest of the content is exactly the same as that described in Example 1. The thickness of the obtained lanthanum strontium manganese oxide thin film is close to that of Example 1.

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Abstract

The invention discloses a method for preparing a lanthanum-strontium-manganese-oxygen film material on a silicon substrate by adopting an acetate chemical solution method. The method comprises the step of preparing precursor solution, namely preparing uniform, stable and transparent precursor solution at certain temperature by adding solutes of lanthanum acetate, strontium acetate and manganese acetate into a mixed solvent consisting of acetic acid and deionized water; preparing a gel film by performing spin coating on the prepared precursor solution on a silicon substrate, and performing heat treatment in stages in a short annealing furnace. The preparation method has the advantages that: the raw materials are cheap and nontoxic; pollution is prevented basically; the preparation process is simple; special equipment is not required; large-scale production is convenient; and the like. Meanwhile, the prepared film has large area, high uniformity, low roughness, no microcrack, stable performance, good electrical property and ferromagnetic performance and potential application prospect in intelligent thermal control devices of ferromagnetic film devices, spin electronic devices and spacecrafts.

Description

technical field [0001] The invention relates to a preparation method of a lanthanum strontium manganese oxide film, in particular to a method for preparing a semimetal lanthanum strontium manganese oxide ferromagnetic film on a silicon substrate by a chemical solution method, belonging to the technical field of magnetic film preparation. Background technique [0002] Lanthanum strontium manganese oxide (La 1-x Sr x MnO 3 , LSMO) thin films are a class of functional materials with a wide range of uses, and are now mainly used as magnetoresistance. Magneto-resistance materials have great application prospects. At present, they have been made into magnetic heads in information storage systems, magneto-resistive memories, automotive sensors, and various general-purpose magnetoresistive materials for measuring and controlling position, angle, speed, speed, and current. effect device. Another application is the application of magnetic refrigeration. This kind of material can b...

Claims

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Application Information

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IPC IPC(8): C23C20/08H01F1/10H01F41/24
Inventor 陈莹王根水张帅董显林
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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