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Preparation method of sulfide material for thin film solar cell absorption layer

A solar cell and sulfide technology, applied in metal material coating process, coating, circuit and other directions, can solve the problems of unreachable, large deviation of stoichiometric ratio, low purity, etc., achieve accurate ratio, low cost, High target quality effect

Active Publication Date: 2012-04-25
GRIMAT ENG INST CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] Common Cu in the market 2 S, In 2 S 3 、Al 2 S 3 , Ga 2 S 3 The powder is generally synthesized by the solution method, which has the problems of large stoichiometric ratio deviation and low purity, which cannot reach the synthesis of CuAlS 2 、CuInS 2 、Cu(InGa)S 2 、Cu(AlGa)S 2 The requirement of the light absorbing layer is to obtain accurate and high-purity Cu 2 S, In 2 S 3 、Al 2 S 3 , Ga 2 S 3 Materials need to break through the shortcomings of existing preparation methods and meet the preparation methods for mass production

Method used

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  • Preparation method of sulfide material for thin film solar cell absorption layer
  • Preparation method of sulfide material for thin film solar cell absorption layer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Put Cu powder and S powder with a purity of 99.995% into an autoclave lined with alumina ceramics in a molar ratio of Cu:S=2:1 after 400g. -3 Close the autoclave under Pa vacuum condition.

[0029] The temperature of the autoclave was adjusted to 1200° C. for 2 hours, and then slowly cooled to room temperature within 8 hours. The prepared block was taken out from the autoclave and ball-milled, and the powder was sieved into -400 mesh grade to obtain Cu 2 S powder (identify phase by X-ray diffractometer). The powder purity is greater than 99.99%.

[0030] Put the prepared powder into a mold with a diameter of 80mm and press it in a hot-press sintering furnace at 800°C and 150MPa to process it into a target with a diameter of 75mm. The target density can reach 99.3%.

Embodiment 2

[0032] Put Cu powder and S block with a purity of 99.98% into a reaction kettle lined with alumina ceramics and fill it with 10 4 Pa the argon closed reactor.

[0033]The reaction kettle filled with argon was adjusted to a temperature of 1210° C. for 2.5 hours, and then slowly cooled to room temperature within 8 hours. The prepared block was taken out from the reactor and then ball-milled, and the powder was sieved into -300 mesh grade to obtain Cu 2 S 1.2 Powder (phase identified by X-ray diffractometer). The powder purity is greater than 99.95%.

[0034] Put the prepared powder into a mold with a diameter of 350mm and press it in a hot-press sintering furnace under the conditions of 900°C and 10MPa, and then process it into a target with a diameter of 310mm. The target density can reach 99.1%.

Embodiment 3

[0036] Put Cu powder and S block with a purity of 99.98% into a reaction kettle lined with alumina ceramics and fill it with 3×10 4 Pa the argon closed reactor.

[0037] The reaction kettle filled with argon was adjusted to a temperature of 1210° C. for 2.5 hours, and then slowly cooled to room temperature within 8 hours. The prepared block was taken out from the reactor and then ball-milled, and the powder was sieved into -300 mesh grade to obtain Cu 2 S 1.2 Powder (phase identified by X-ray diffractometer). The powder purity is greater than 99.95%.

[0038] Put the prepared powder into a mold with a diameter of 30mm and press it in a hot-press sintering furnace at 520°C and 800MPa to process it into a target with a diameter of 25mm. The target density can reach 99.9%.

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Abstract

The invention relates to a preparation method of sulfide material for a thin film solar cell absorption layer, which comprises the following steps of: proportioning, according to the material ingredient requirement, and then putting sulfur and raw materials required in a container, evacuating the container to lead the pressure therein to be lower than 1*10<-2>Pa or filling argon or nitrogen,the pressure of which is lower than atmospheric pressure, in the container, and sealing the container; regulating the temperature of the sealed container to be higher than the melting point of material andpreserving heat for 0.1 to 10 hours at this temperature, then slowly cooling the container to room temperature to result in a block, taking the block out of the container and then ball milling the block into powder, sieving the powder to obtain sulfide power; putting the sulfide power in a mold of a hot pressing furnace for being pressed at 500 to 900 DEG C and under the pressure from 1MPa to 800MPa, and obtaining a sulfide block target by processing as dimensionally required. The material prepared according to the method of the invention hardly incorporates impurities and is uniform in ingredients and easy in controlling elemental proportion; the powder can be used for multiple targets and the block target can be used for sputter coating.

Description

technical field [0001] The invention relates to a preparation method of a sulfide material used for an absorbing layer of a thin-film solar cell. The material includes Cu 2 S, In 2 S 3 、Al 2 S 3 , Ga 2 S 3 , the material state is powder or bulk target. Background technique [0002] CuAlS 2 、CuInS 2 、Cu(InGa)S 2 、Cu(AlGa)S 2 As a light-absorbing layer, it has the characteristics of anti-radiation and stable performance. It can be prepared into a low-cost solar thin-film battery, which is suitable for civilian use. Among its preparation methods, the current relatively mature method generally uses the first sputtering and then vulcanization process. However, this method cannot guarantee the uniformity of film composition and thickness, and the vulcanization process involves highly toxic sulfide, which requires high equipment requirements during the preparation process. This preparation method needs to solve the problems of environmental protection and relatively hig...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18C23C14/34C23C14/06
CPCY02P70/50
Inventor 谢元锋吕宏马光耀王玉民李屹民
Owner GRIMAT ENG INST CO LTD
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