Preparation method of CuInS2 nanocrystalline material

A nanocrystalline material and nanocrystalline technology are applied in the growth of polycrystalline materials, chemical instruments and methods, and single crystal growth. It can solve the problems of unsuitable large-scale preparation, poor dispersion of nanoparticles, and high cost. It is suitable for large-scale Large-scale industrial production, mild reaction conditions, and the effect of reducing production costs

Inactive Publication Date: 2011-05-04
NANKAI UNIV
View PDF5 Cites 15 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the nanocrystalline materials prepared by the above method have certain shortcomings: the synthesis steps are cumbersome, the cost is high, and it is not suitable for large-scal...

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of CuInS2 nanocrystalline material
  • Preparation method of CuInS2 nanocrystalline material
  • Preparation method of CuInS2 nanocrystalline material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] CuInS 2 The preparation method of nanocrystalline materials, taking the preparation of S1 sample as an example, the steps are as follows:

[0033]1) Dissolve 20 mmol sodium oleate and 10 mmol copper chloride or 10 mmol indium chloride in a mixed solution of 30 mL n-hexane, 15 mL deionized water and 20 mL ethanol and reduce Pressure distillation, then stirred at 60 oC for 4h, then washed 5 times with water and rotary evaporated to remove the remaining n-hexane, to obtain the precursor copper oleate and indium oleate;

[0034] 2) Mix 1mmol of the prepared precursor copper oleate and indium oleate mixture with 2ml oleic acid (OA), put 15ml oleylamine solvent dissolved in 1mmol elemental sulfur into the above mixed solution, at a temperature of 80°C, Under the vacuum condition of -0.1MPa, react for 30 minutes, fill with Ar, and finally react for 60 minutes under stirring at 180°C to form a black-red product;

[0035] 3) After the obtained product was cooled to room temper...

Embodiment 2

[0042] CuInS 2 The preparation method of nanocrystalline material, taking the preparation of S4 sample as an example, the steps are as follows:

[0043] 1) Dissolve 20 mmol sodium oleate and 10 mmol copper chloride or 10 mmol indium chloride in a mixed solution of 30 mL n-hexane, 15 mL deionized water and 20 mL ethanol and reduce Pressure distillation, then stirred at 60 oC for 4h, then washed 5 times with water and rotary evaporated to remove the remaining n-hexane, to obtain the precursor copper oleate and indium oleate;

[0044] 2) Mix 1mmol of the prepared precursor copper oleate and indium oleate mixture with 2ml of oleic acid (OA), put 6ml of oleylamine solvent dissolved in 1mmol of elemental sulfur into the above mixed solution, at a temperature of 90°C, Under the vacuum condition of -0.05MPa, react for 45 minutes, fill with Ar, and finally react for 45 minutes under stirring at 180°C to form a black-red product;

[0045] 3) After the obtained product was cooled to ro...

Embodiment 3

[0051] CuInS 2 The preparation method of nanocrystalline materials, taking the scale-up preparation of S1 samples as an example:

[0052] According to Example 1, the amount of the reactant copper oleate, indium oleate precursor and elemental sulfur was increased to 20 times the original amount, that is, the precursor copper oleate and indium oleate mixture was 20mmol, and the oleic acid was 40ml , elemental sulfur is 20mmol, oleylamine is 300ml, CuInS with a particle size of about 9.7nm can be obtained under the same conditions 2 Nanocrystalline pure phases, such as Figure 8 shown. This shows that the CuInS provided by the present invention 2 The preparation method of the nanocrystalline material can be used for large-scale industrial production.

[0053] The results show that the CuInS provided by the invention 2 The preparation method of the nanocrystalline material has controllable product size, good dispersion, simple operation, easy repeatability, high purity, mild ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a preparation method of CuInS2 nanocrystalline material which has a copper pyrite structure and a controllable size and is prepared by taking curpic oleate, indium oleate precursor and elemental sulphur as the raw material by a one-step chemical method. The invention has the advantages that the preparation method of the CuInS2 nanocrystalline material has simple operation, easy repetition, high purity of obtained CuInS2 nanocrystalline material,moderate reaction condition and no pollution, greatly lowers cost and is suitable for large-scale industrial production. The CuInS2 nanocrystalline material provided by the invention has quantum size effect, can serve as the adsorption material of solar cells and has an important meaning to the practical application of the material in the solar cell fiel.

Description

technical field [0001] The invention relates to photoelectric materials and their preparation technology, specifically a CuInS 2 Preparation methods of nanocrystalline materials. Background technique [0002] Semiconducting Ternary Chalcogenides I-III-VI 2 (I = Cu, Ag; III = Ga, In; VI = S, Se, Te) have attracted attention due to their wide applications in optoelectronic materials, biomarkers, and photocatalysis. As a typical ternary compound, CuInS 2 Semiconductors have been extensively studied because of their many advantages as a good optoelectronic material, such as CuInS 2 It is a direct bandgap semiconductor material with a bandgap of 1.53 eV, which is close to the optimal bandgap value (1.45 eV) required for solar cell materials, and the bandgap is not sensitive to temperature changes. CuInS 2 The material has an absorption coefficient of up to 10 5 cm -1 Order of magnitude, as the light absorbing layer of solar cells, the thickness only needs to be 1~2 μm. ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C30B29/46C30B7/14C01G1/12
Inventor 陈军彭生杰梁静王艳程方益陶占良
Owner NANKAI UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap