Low-temperature manufacturing method and special target of ZnO transparent conductive film

A transparent conductive film, zinc oxide technology, applied in metal material coating process, ion implantation plating, coating and other directions, can solve the problem of reducing near-infrared band transmittance, reducing film mobility, increasing free carrier absorption, etc. It can reduce the scattering of ionized impurities, be beneficial to large-scale production and popularization and application, and improve the electron mobility.

Inactive Publication Date: 2011-06-01
上海太阳能电池研究与发展中心
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the method of increasing the carrier concentration by doping is used to reduce the resistivity, on the one hand, the mobility of the film will be reduced due to the increase in the number of ionized impurities; on the other hand, it will also increase due to the increase of the carrier concentration The absorption of free carriers in the near-infrared band, thereby reducing the transmittance in the near-infrared band

Method used

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  • Low-temperature manufacturing method and special target of ZnO transparent conductive film
  • Low-temperature manufacturing method and special target of ZnO transparent conductive film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Special target material of the present invention: ZnO: V target is installed on the target gun of magnetron sputtering equipment, and the atomic percentage of V / (V+Zn) in the target material is 1.79%, with Corning glass as substrate, substrate After being ultrasonically cleaned with acetone, alcohol and deionized water for 10 minutes each, rinsed with deionized water, dried with nitrogen, and placed on the substrate stage of the sputtering chamber.

[0025] Vacuum the chamber to 1×10 with a mechanical pump -1 Pa, the substrate was cleaned by plasma reverse sputtering with high-purity Ar. The plasma reverse sputtering cleaning parameters were set as follows: the sputtering pressure was 5Pa, the bias voltage was 700V, the duty cycle was 20%, and the reverse sputtering time was 8 minutes.

[0026] Use mechanical pump and molecular pump to pump the sputtering chamber to 2×10 -4 The background vacuum of Pa, and then start the preparation of the film, using radio frequency ...

Embodiment 2

[0029] The special target material of the present invention: ZnO: V target is installed on the target gun of magnetron sputtering equipment, and the atomic percentage of V / (V+Zn) in the target material is 1.79%, with Corning glass as the substrate, successively through Acetone, alcohol, and deionized water were ultrasonically cleaned for 10 minutes each, rinsed with deionized water, dried with nitrogen, and placed on the substrate stage of the sputtering chamber.

[0030] Vacuum the chamber to 1×10 with a mechanical pump -1 Pa, the substrate was cleaned by plasma reverse sputtering with high-purity Ar. The plasma reverse sputtering cleaning parameters were set as follows: the sputtering pressure was 5Pa, the bias voltage was 700V, the duty cycle was 20%, and the reverse sputtering time was 8 minutes.

[0031]Use mechanical pump and molecular pump to pump the vacuum chamber to 2×10 -4 The background vacuum of Pa, and then start the preparation of the film, using radio frequen...

Embodiment 3

[0034] The special target material of the present invention: ZnO: V target is installed on the target gun of magnetron sputtering equipment, and the atomic percentage of V / (V+Zn) in the target material is 1.79%, with quartz glass as the substrate, successively pass through Acetone, alcohol, and deionized water were ultrasonically cleaned for 10 minutes each, rinsed with deionized water, dried with nitrogen, and placed on the substrate stage of the sputtering chamber.

[0035] Vacuum the chamber to 1×10 with a mechanical pump -1 Pa, the substrate was cleaned by plasma reverse sputtering with high-purity Ar. The plasma reverse sputtering cleaning parameters were set as follows: the sputtering pressure was 5Pa, the bias voltage was 700V, the duty cycle was 20%, and the reverse sputtering time was 8 minutes.

[0036] Use mechanical pump and molecular pump to pump the sputtering chamber to 2×10 -4 The background vacuum of Pa, and then start the preparation of the film, using radi...

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Abstract

The invention discloses a low-temperature manufacturing method and a special target of a ZnO transparent conductive film. The method comprises the following steps of: preparing a ceramic target by using V2O5 as a doping material of ZnO; carrying out plasma anti-sputter cleaning on a substrate with high-purity Ar; and then growing a V2O5-doped ZnO-based transparent conductive film at low temperature. The invention has the advantages that Zn<2+> is replaced with V<5+>, the valence state difference of the V<5+> and the Zn<2+> is 3, three conduction electrons can be provided, and then enough free carriers can be provided under the condition of low doping dose, the ionized impurity scattering is effectively lowered, the electron mobility is increased, and the combination property of the transparent conductive film is improved. Meanwhile, low-temperature growth realizes growth on flexible substrate materials such as organic polymers and the like and provides broader space for the application to flexible photoelectric devices. Treating the surface of the substrate in the way of plasma anti-sputter is beneficial to growing of high-quality films under the condition of low temperature.

Description

technical field [0001] The invention relates to the technical field of transparent conductive oxide thin films, in particular to a low-temperature preparation method and a special target material for zinc oxide (ZnO) transparent conductive oxide thin films used in solar cells. Background technique [0002] Transparent Conducting Oxide (Transparent Conducting Oxide: TCO) thin film is an important component of solar cells. SnO 2 Base, In 2 o 3 ZnO-based and ZnO-based materials are the three most important TCO thin film materials. In recent years, the research on ZnO-based thin film materials has attracted more and more attention. ZnO-based transparent conductive thin film materials are non-toxic, rich in sources, cheap, and more stable than In in hydrogen plasma. 2 o 3 :Sn(ITO) and SnO 2 :F(FTO), especially for silicon-based thin-film solar cells, has unique advantages. In addition, ZnO-based transparent conductive films are also transparent front electrode materials f...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/08C23C14/02
Inventor 褚君浩梁艳马建华朱晓晶姚娘娟王善力江锦春
Owner 上海太阳能电池研究与发展中心
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