Dual-layer silicon nitride film for crystalline silicon solar cell and preparation method thereof

A double-layer silicon nitride, solar cell technology, applied in coatings, circuits, electrical components, etc., can solve the problems of large refractive index, inability to use thin films, can not be used, etc., to achieve enhanced anti-reflection effect, good practical value, The effect of improving photoelectric conversion efficiency

Inactive Publication Date: 2011-07-20
EOPLLY NEW ENERGY TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, after considering the optical loss, the monolayer SiN x :H film cannot fully exert its excellent passivation effect because it cannot adopt a large refractive index
[0005] All in all, a single-layer silicon nitride film can neither have a better anti-reflection effect than a double-layer silicon nitride film, nor can it use a larger refractive index to fully exert its excellent passivation effect

Method used

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Examples

Experimental program
Comparison scheme
Effect test

example 1

[0025] Example 1. After the P-type monocrystalline silicon wafer with an area of ​​125mm×125mm and a thickness of about 200 microns has been textured, diffused, etched, dephosphorized silicon glass and cleaned, it is placed in a PECVD equipment for double-layer nitriding Growth of silicon thin films. In this process, the parameters of the first-stage film growth were set as time 120s, power 3500W, temperature 450°C, air pressure 1700mTorr, and the flow ratio of silane and ammonia to 1:6; the second-stage film growth The growth parameters were respectively set as 600s, the flow ratio of silane and ammonia gas was 1:8, and other parameters were the same as those of the first stage. The composite refractive index of the grown double-layer silicon nitride film is about 2.11, wherein the refractive index of the inner layer is about 2.25, and the refractive index of the outer layer is about 2.03.

example 2

[0026] Example 2: After the P-type monocrystalline silicon wafer with an area of ​​125mm×125mm and a thickness of about 200 microns is textured, diffused, etched, dephosphorous silicon glass is removed and cleaned, it is placed in a PECVD device for double-layer nitriding Growth of silicon thin films. In this process, the parameters of the first-stage film growth were set as time 120s, power 3500W, temperature 450°C, air pressure 1700mTorr, and the flow ratio of silane and ammonia to 1:7; the second-stage film growth The growth parameters were respectively set as 600s time and 430°C temperature, and other parameters were the same as those in the first stage.

example 3

[0027] Example 3. After the P-type monocrystalline silicon wafer with an area of ​​125mm×125mm and a thickness of about 200 microns has been textured, diffused, etched, dephosphorized silicon glass and cleaned, it is placed in a PECVD equipment for double-layer nitriding Growth of silicon thin films. In this process, the parameters of the first-stage film growth were set as time 120s, power 3500W, temperature 450°C, air pressure 1700mTorr, and the flow ratio of silane and ammonia to 1:7; the second-stage film growth The growth parameters were respectively set as 600s time and 3200W power, and other parameters were the same as those in the first stage.

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Abstract

The invention discloses a dual-layer silicon nitride film for a crystalline silicon solar cell and a preparation method thereof and relates to the technical field of crystalline silicon solar cell production. The dual-layer silicon nitride film consists of two silicon nitride sublayer films with different refractive indexes; and the two silicon nitride sublayer films are obtained in a one-time PECVD (Plasma Enhanced Chemical Vapor Deposition) process. In two sublayers, the first sub layer (an inner layer) in contact with a silicon chip has higher refractive index (that is to say, n1 is more than n2) compared with that of the second sublayer film (an outer layer). The one-time deposition process is carried out by two stages; and in the two stages, two different flow ratios of silane to ammonia gas, two different growth temperatures, two different high-frequency output powers of a power supply, two different deposition times and two different work air pressures are applied. When the dual-layer silicon nitride film is used for the crystalline silicon solar cell, compared with a single-layer silicon nitride film, the dual-layer silicon nitride film has better antireflection effect and better surface passivation efficiency and the photoelectric conversion efficiency of the solar cell can be improved, therefore, the dual-layer silicon nitride film has higher practical value.

Description

Technical field: [0001] The invention relates to the technical field of production of crystalline silicon solar cells, in particular to a double-layer silicon nitride film used for crystalline silicon solar cells and a preparation method thereof. Background technique: [0002] One way to improve the conversion efficiency of crystalline silicon solar cells is to reduce the reflectivity of the silicon wafer surface and increase the surface passivation effect. Industrial crystalline silicon solar cells usually use PECVD to deposit silicon nitride films. The prepared silicon nitride films contain three elements such as Si, N, and H, and are usually expressed as SiN x :H film, it not only plays the role of anti-reflection, but also plays the role of surface passivation. [0003] The principle of anti-reflection is to use the light reflected by the two surfaces before and after the anti-reflection layer (ARC) to superimpose and cancel, so as to weaken the reflected light. Single...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0216H01L31/18C23C16/34C23C16/52
CPCY02P70/50
Inventor 屈盛
Owner EOPLLY NEW ENERGY TECH
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