Parallel connection protection circuit for solar module
A protection circuit and module technology, which is applied in emergency protection circuit devices, emergency protection circuit devices for limiting overcurrent/overvoltage, circuits, etc., can solve the problem of reducing the effective voltage output of solar cells and shortening the time for effective power generation during the day , Improve the cost of solar photovoltaic power generation and other issues, to achieve the effect of promoting promotion, simple structure, and increasing output power
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Embodiment 1
[0029] Embodiment 1. Two resistors are used to form a control module:
[0030] Such as Figure 3a The structure of the control module shown includes a resistor C connected in series as a drive module and a resistor H1 as a protection module, and the value relationship between the two resistors satisfies R H1 :R C =U G :(U PV -U G ), where U G is the gate driving voltage of the FET, U PV is the output voltage of the solar module. Such as gate drive voltage U G 2V, PV output voltage U PV is 12V, it can be calculated that R H1 :R C The resistance value ratio is 1:5. The larger the resistance value, the smaller the current passing through the resistor, and the smaller the loss generated, but the resistance value should not be too large, which will lead to unstable control, and the gate of the field effect transistor should be guaranteed drive current. The principle of this example is simple, the cost is the lowest, and the reliability is high in the applicable voltage ...
Embodiment 2
[0032] Embodiment 2: A resistor is used, and a plurality of diodes are connected in series to form a control module:
[0033] Such as Figure 3b As shown, in this example, the drive module still uses a resistor C, while the protection module uses several diodes in series to form a diode string H2, each of which contains a diode voltage drop of 0.7V, and the number of diodes matches the field effect The multiple of the gate driving voltage of the transistor relative to the voltage drop of a single diode, that is, the example can control the gate driving voltage of the field effect transistor through the number of diodes, and make it basically stable at a fixed voltage value.
[0034] This example uses the stable junction voltage of the diode to basically stabilize the gate drive voltage, which can adapt to different PVs and has strong versatility.
Embodiment 3
[0035]Embodiment 3, using a resistor and a control module composed of a Zener diode:
[0036] Such as Figure 3c As shown, in this example, the drive module uses a resistor C, and the protection module uses a Zener diode H3. The voltage regulation value of the Zener diode is determined according to the drive voltage value of the gate of the field effect transistor, and usually exceeds the gate voltage of the field effect transistor. The driving voltage of the pole is enough to make it work in a fully turned-on state, but it cannot exceed the breakdown voltage of the gate. The Zener diode stabilizes the voltage value through the leakage current. There are no high requirements for the selection of the drive circuit, that is, the resistance C, and it only needs to meet the drive current requirements of the field effect tube area. The circuit of this example is simple, stable and reliable, has strong versatility, and can be suitable for various application requirements.
[0037]...
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