Method for preparing p-type IIB-VIA family quasi-one-dimensional semiconductor nano material by chemical vapor-deposition in-situ doping

A chemical vapor deposition, in-situ doping technology, applied in chemical instruments and methods, from chemical reactive gases, semiconductor/solid-state device manufacturing, etc., to achieve the effects of high effective impurity doping concentration, uniform structure, and simple process

Inactive Publication Date: 2013-02-13
HEFEI UNIV OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Highly doped p-type group II-VI quasi-one-dimensional semiconductor nanomaterials are rarely reported

Method used

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  • Method for preparing p-type IIB-VIA family quasi-one-dimensional semiconductor nano material by chemical vapor-deposition in-situ doping
  • Method for preparing p-type IIB-VIA family quasi-one-dimensional semiconductor nano material by chemical vapor-deposition in-situ doping
  • Method for preparing p-type IIB-VIA family quasi-one-dimensional semiconductor nano material by chemical vapor-deposition in-situ doping

Examples

Experimental program
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Effect test

Embodiment 1

[0027] Put 0.15g of Bi powder with a purity of 99.9% into a porcelain boat and place it on the front of the horizontal tube furnace (5cm away from the heating source), place the porcelain boat with 0.3g of ZnSe powder with a purity of 99.9% in the horizontal tube furnace The heating source inside is the middle part of the horizontal tube furnace, and the evaporated gold silicon wafer used as the deposition substrate is placed at the rear of the horizontal tube furnace (12.5 cm away from the heating source), and the inlet of the argon-hydrogen protective gas flow is As the front of the horizontal tube furnace; seal the furnace body and pump it to a vacuum of 3.0×10 -3 After Pa, argon-hydrogen protective gas is introduced at a rate of 50 SCCM to bring the pressure in the furnace to 20000 Pa, wherein the gas volume ratio of argon and hydrogen is 90-95:10-5. Then raise the temperature to 1000°C, keep it for 1.5h, then cool down the furnace body to room temperature naturally, and u...

Embodiment 2

[0030]Put 0.2g of Sb powder with a purity of 99.9% into a porcelain boat and place it on the front of the horizontal tube furnace (5cm away from the heating source), place the porcelain boat with 0.3g of ZnS powder with a purity of 99.9% in the horizontal tube furnace The heating source inside is the middle part of the horizontal tube furnace, and the evaporated gold silicon wafer used as the deposition substrate is placed at the rear of the horizontal tube furnace (15 cm away from the heating source), and the inlet of the argon-hydrogen protective gas flow is used as the The front of the horizontal tube furnace; seal the furnace body and pump it to a vacuum of 3.0×10 -3 After Pa, argon-hydrogen protective gas is introduced at a rate of 90 SCCM to bring the pressure in the furnace to 20000 Pa, wherein the gas volume ratio of argon and hydrogen is 90-95:10-5. Then raise the temperature to 1100°C, keep it for 1.5h, and then cool down the furnace naturally to room temperature, th...

Embodiment 3

[0033] The porcelain boat that fills the ZnSe powder of 0.3g purity 99.9% is placed on the heating source place in the horizontal tube furnace, that is, the middle part of the horizontal tube furnace, and the evaporated gold silicon wafer used as the deposition substrate is placed in the horizontal tube furnace The rear part of the furnace (10cm away from the heating source), with the inlet of the argon-hydrogen protective gas flow as the front part of the horizontal tube furnace; the furnace body is sealed and evacuated to a vacuum of 3.0×10 -3 After Pa, feed argon-hydrogen protective gas at a rate of 100SCCM, and simultaneously feed ammonia gas at a rate of 8SCCM (the flow ratio of argon-hydrogen protective gas and dopant gas source is 4:50), so that the pressure in the furnace is 20000Pa, of which the argon The gas volume ratio of gas and hydrogen is 90-95:10-5. Then raise the temperature to 1040°C, keep it for 1.5h, and then cool down the furnace naturally to room temperat...

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Abstract

The invention discloses a method for preparing a p-type IIB-VIA family quasi-one-dimensional semiconductor nano material by chemical vapor-deposition in-situ doping, which comprises the steps of evaporating, cooling and annealing. The method specifically comprises the following steps: putting a IIB-VIA family material with the purity of at least 99.9% to the middle part of a horizontal tube furnace; putting a VA family doping element with the purity of at least 99.9% to the front part of the horizontal tube furnace; putting a gold evaporated silicon wafer of which the gold coating thickness is 1-100nm to the back part of the horizontal tube furnace; introducing argon and hydrogen protective gases, keeping the pressure in the furnace at 5000-20000 Pa, heating to 700-1100 DEG C, keeping the temperature for 1-2 hours, and cooling to room temperature; and annealing in an argon atmosphere to obtain the p-type doped IIB-VIA family quasi-one-dimensional semiconductor nano material. The method has the advantages of simple technique and high controllability, can be used for synthesizing a great deal of uniform p-type doped IIB-VIA family nano materials, and lays important foundation for the application of IIB-VIA family nano optoelectronic devices.

Description

1. Technical field [0001] The invention relates to a method for preparing p-type doped IIB-VIA group quasi-one-dimensional semiconductor nanomaterials, in particular to a p-type IIB-VIA group quasi-one-dimensional semiconductor nanomaterial prepared by chemical vapor deposition in-situ doping Methods. 2. Background technology [0002] II-VI wide bandgap semiconductor nanomaterials have become a current research hotspot because of their great potential in nano-optoelectronics. II-VI quasi-one-dimensional semiconductor nanomaterials, including ZnO, ZnS, ZnSe, ZnTe and CdS nanowires, nanorods and nanoribbons, etc., have many low-dimensional effects such as quantum size effect and surface effect. Optoelectronic devices can not only break through the current difficulties in circuit miniaturization and optoelectronic integration, but also have higher performance due to their excellent characteristics. In order to realize the application of II-VI nanomaterials in nano-optoelectro...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/20C30B29/48C30B29/62C30B25/00
Inventor 揭建胜张希威彭强王莉于永强吴春艳朱志峰
Owner HEFEI UNIV OF TECH
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