RFLDMOS (Radio Frequency Laterally Diffused Metal Oxide Semiconductor) based on self-aligned silicide and tungsten plug structure and manufacturing method thereof
A self-aligned silicide and metal silicide technology, which is used in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of increased contact resistance and reduced performance of power chips, and can reduce contact resistance, increase power gain, the effect of improving device performance
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[0025] Example: see figure 1 shown, figure 1 It is the RFLDMOS cross-sectional view of the polysilicon gate that has been fabricated, in which 1 is the source highly doped region, 2 is the drain highly doped region, 3 is the polysilicon gate, the height is about 2000-3000 angstroms, and 4 is the surface oxide layer . After the surface oxide layer 4 is removed by wet cleaning, it is filled with SOG solution 5 (Spin On Glass, consisting of 80% solvent and 20% silicon dioxide, the ratio can be adjusted according to the actual situation) and evenly spin-coated on the surface. On the surface of the silicon wafer, the height of the solution is slightly lower than that of the polysilicon gate 3. After the solution is deposited, the SOG is baked to evaporate the solvent. At this time, except for the top surface of the gate that is not covered, the entire surface of the silicon wafer is filled with a thin layer. Silicon dioxide; next step, etch away part of the oxide layer on the top...
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