RFLDMOS (Radio Frequency Laterally Diffused Metal Oxide Semiconductor) based on self-aligned silicide and tungsten plug structure and manufacturing method thereof

A self-aligned silicide and metal silicide technology, which is used in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of increased contact resistance and reduced performance of power chips, and can reduce contact resistance, increase power gain, the effect of improving device performance

Active Publication Date: 2011-09-14
KUNSHAN HUATAI ELECTRONICS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] With the gradual reduction of the feature size of the processing technology, the electrical contact cross-section between the source, drain and gate regions of the device an

Method used

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  • RFLDMOS (Radio Frequency Laterally Diffused Metal Oxide Semiconductor) based on self-aligned silicide and tungsten plug structure and manufacturing method thereof
  • RFLDMOS (Radio Frequency Laterally Diffused Metal Oxide Semiconductor) based on self-aligned silicide and tungsten plug structure and manufacturing method thereof
  • RFLDMOS (Radio Frequency Laterally Diffused Metal Oxide Semiconductor) based on self-aligned silicide and tungsten plug structure and manufacturing method thereof

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[0025] Example: see figure 1 shown, figure 1 It is the RFLDMOS cross-sectional view of the polysilicon gate that has been fabricated, in which 1 is the source highly doped region, 2 is the drain highly doped region, 3 is the polysilicon gate, the height is about 2000-3000 angstroms, and 4 is the surface oxide layer . After the surface oxide layer 4 is removed by wet cleaning, it is filled with SOG solution 5 (Spin On Glass, consisting of 80% solvent and 20% silicon dioxide, the ratio can be adjusted according to the actual situation) and evenly spin-coated on the surface. On the surface of the silicon wafer, the height of the solution is slightly lower than that of the polysilicon gate 3. After the solution is deposited, the SOG is baked to evaporate the solvent. At this time, except for the top surface of the gate that is not covered, the entire surface of the silicon wafer is filled with a thin layer. Silicon dioxide; next step, etch away part of the oxide layer on the top...

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Abstract

The invention discloses an RFLDMOS (Radio Frequency Laterally Diffused Metal Oxide Semiconductor) based on a self-aligned silicide and tungsten plug structure and a manufacturing method thereof. By utilizing a double-diffusion method, a source high-doping area and a drain high-doping area which have lateral channel structures are manufactured on a silicon slice, and a multicrystal silicon grid ismanufactured; the manufacturing method of the RFLDMOS based on the self-aligned silicide and tungsten plug structure is characterized by further carrying out the following treatments: forming a silicon dioxide layer on the surface; etching off parts of the silicon dioxide layer at the tops of a source and a drain, and depositing a layer of metal on the whole surface of the silicon slice; carryingout high-temperature annealing treatment to form a metal silicide in a silicon-exposed area on the silicon slice surface; manufacturing a dummy faraday gate above the multicrystal silicon grid, manufacturing an oxide dielectric layer on the whole silicon slice surface, manufacturing through holes communicated to the metal silicide at parts corresponding to metal silicide contact holes, and filling tungsten in the through holes; and arranging metal layers respectively corresponding to the through holes of the source and the drain to form a contact electrode. According to the RFLDMOS based on the self-aligned silicide and tungsten plug structure and the manufacturing method thereof disclosed by the invention, the series impedance of a source end is reduced, and the power gain of devices is effectively increased.

Description

technical field [0001] The invention relates to an LDMOS device, in particular to a high-power RFLDMOS device and a method for preparing the device. Background technique [0002] RFLDMOS devices are improved n-channel MOSFETs designed for radio frequency power amplifiers, and are integrated high-power solid-state microwave power semiconductor devices that integrate microelectronic integrated circuits and microwave technology. LDMOS has a lateral channel structure, and the drain, source and gate are all on the chip surface. Double diffusion technology is adopted, and boron and phosphorus are diffused twice in the same photolithographic window. The difference in the lateral junction depth of the two impurity diffusions can be accurately Determine the channel length. Due to its high breakdown voltage, good linearity, high efficiency and low price, it is intensively used in high-frequency and high-power devices such as mobile communication base stations and airborne radars. ...

Claims

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Application Information

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IPC IPC(8): H01L21/336H01L29/78
Inventor 张耀辉余庭赵一兵
Owner KUNSHAN HUATAI ELECTRONICS TECH CO LTD
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