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Dual-temperature-zone synthesis method and apparatus for phosphorus-silicon-cadmium polycrystal material

A technology of synthesis device and synthesis method, which is applied to the growth of polycrystalline materials, chemical instruments and methods, single crystal growth, etc., and can solve the synthesis process of cadmium-phosphorous-silicon-cadmium polycrystalline material and the synthesis of polycrystalline material of cadmium-phosphorus-silicon Difficulty, high melting point, etc., to achieve the effect of shortening the synthesis time, increasing the quantity, and facilitating vacuum sealing

Inactive Publication Date: 2012-07-04
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, the melting point of cadmium phosphorus silicon crystal is as high as 1133 ° C, and its saturated decomposition pressure is as high as 22 atm near the melting point, and cadmium phosphorus silicon will react with quartz at high temperature, which will easily lead to the explosion of the crucible
Such a high temperature and decomposition pressure make the polycrystalline material synthesis of cadmium phosphorus silicon very difficult
So far, there is no detailed report on the synthesis process of phosphorus, silicon and cadmium polycrystalline materials

Method used

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  • Dual-temperature-zone synthesis method and apparatus for phosphorus-silicon-cadmium polycrystal material
  • Dual-temperature-zone synthesis method and apparatus for phosphorus-silicon-cadmium polycrystal material
  • Dual-temperature-zone synthesis method and apparatus for phosphorus-silicon-cadmium polycrystal material

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Experimental program
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Embodiment 1

[0036] Embodiment 1, the dual-temperature-zone synthetic device of phosphorus silicon cadmium polycrystal

[0037] structured as image 3 As shown, it includes dual temperature zone quartz tube, dual temperature zone synthesis furnace body and temperature control unit.

[0038] Dual temperature zone quartz tube structure such as figure 2 As shown, the inner diameter of the quartz tube 1 is 30 mm, the effective length is 550 mm, and the distances from the sealing end 7 are 150 mm and 300 mm, and a quartz baffle a2 and a quartz baffle b3 with a height of 15 mm are successively provided. 9 approximately 100mm place is the conical neck 5 and the quartz pin 6 that cooperates. Between the quartz baffle b and the tapered neck 5, place a composite boat 4 made of boron nitride material with a length of 200 mm and a height of 20 mm. When in use, place the phosphorus block in the synthetic raw material between the sealed end of the quartz tube and the quartz baffle a, place other syn...

Embodiment 2

[0040] Embodiment 2, the dual-temperature-zone synthetic method of phosphorus-silicon-cadmium polycrystalline, uses the device described in embodiment 1, and the steps are as follows:

[0041] (1) three kinds of elemental raw materials of phosphorus, silicon and cadmium with a purity of 99.999% are dosed according to the ratio of silicon: cadmium: phosphorus = 1: 1: 2, and phosphorus is packed into one end of the dual-temperature zone quartz tube, and silicon and cadmium are Put it into the synthetic material boat and put it into the other end of the dual-temperature zone quartz tube, and evacuate the dual-temperature zone quartz tube to 2×10 -4 Seal after Pa.

[0042] (2) put one end of the dual-temperature zone quartz tube containing phosphorus into the low-temperature zone of the dual-temperature zone synthesis furnace, and put one end of the synthetic material boat containing silicon and cadmium into the high-temperature zone of the dual-temperature zone synthesis furnace....

Embodiment 3

[0046] Embodiment 3, as described in embodiment 2, difference is: three kinds of simple substances in the step (1) are by silicon: cadmium: the ratio batching of phosphorus=1: 1: 2.02, other steps and parameters are the same as in embodiment 1 same.

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Abstract

The invention relates to a dual-temperature-zone synthesis method and apparatus for a phosphorus-silicon-cadmium polycrystal material. The synthesis method comprises the following steps: proportioning elementary substance raw materials silicon, cadmium and phosphorus at a ratio of 1:1:(2-2.05); adding phosphorus to one end of a quartz tube in a dual temperature zone, adding silicon and cadmium toa synthesis material boat, and placing the synthesis material boat in the other end of the quartz tube in the dual temperature zone; vacuumizing the quartz tube in the dual temperature zone and sealing the quartz tube; and respectively heating the two temperature zones, carrying out heat preservation, and cooling two temperature zones of a dual-temperature-zone furnace to obtain the high-purity phosphorus-silicon-cadmium polycrystal material. The obtained phosphorus-silicon-cadmium polycrystal material can be used as a high-quality phosphorus-silicon-cadmium single crystal growing material.

Description

technical field [0001] The invention relates to the preparation of an infrared nonlinear optical material cadmium phosphorus silicon, in particular to a synthesis method and a device of a polycrystalline material of the cadmium phosphorus silicon. Background technique [0002] Mid-to-far infrared lasers have many applications in military and civilian fields. Using infrared nonlinear optical crystals for frequency conversion is one of the effective methods to generate continuously tunable mid- and far-infrared lasers. At present, the widely studied infrared nonlinear optical crystals include silver gallium sulfur and silver gallium selenide. The nonlinear optical coefficients and thermal conductivity of silver gallium sulfide and silver gallium selenide are low, which cannot meet the output requirements of high-power mid- and far-infrared lasers. [0003] Cadmium silicon phosphorus, chemical formula CdSiP 2 , the thermal conductivity is 13.6Wm -1 K -1 , the specific heat...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B28/02C30B29/10
Inventor 陶绪堂张国栋王善朋施琼阮华棚蒋民华
Owner SHANDONG UNIV