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Method for preparing single-layer or multi-layer graphene through chemical vapor deposition

A technology of chemical vapor deposition and multi-layer graphene, which is applied in the direction of single-layer graphene, chemical instruments and methods, graphene, etc., to achieve the effect of good light transmission, extremely high crystal quality, and low defect peaks

Inactive Publication Date: 2011-10-19
无锡第六元素高科技发展有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0013] The technical problem to be solved in the present invention is to overcome the defects of the existing graphene preparation methods and provide a method for preparing ultra-large-area single-layer or multi-layer graphene films

Method used

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  • Method for preparing single-layer or multi-layer graphene through chemical vapor deposition
  • Method for preparing single-layer or multi-layer graphene through chemical vapor deposition
  • Method for preparing single-layer or multi-layer graphene through chemical vapor deposition

Examples

Experimental program
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Effect test

Embodiment 1

[0035] Prepare graphene thin film on copper foil by chemical vapor deposition, comprising the following preparation steps:

[0036] 1. Take a 25 micron thick copper foil substrate 7 and place it in the quartz tube 4;

[0037] 2. Turn on the vacuum pump to pump the air pressure of the quartz tube 4 to the ultimate vacuum state of 4×10 -2 Torr;

[0038] 3. Set the inert gas flowmeter 1 to 5 sccm, and inject argon into the vacuum chamber;

[0039] 4. After 5 minutes, close the valve of the inert gas flow meter 1, and pump the air pressure of the tube furnace 5 to the limit of 8×10 -2 Torr;

[0040] 5. Repeat step (3) and step (4) for 3 times; until the residual oxygen in the quartz tube 4 is driven off until the partial pressure of oxygen is less than 1×10 -6 Torr;

[0041] 6. Set the hydrogen flow meter 2 to 5 sccm, and inject hydrogen into the vacuum chamber;

[0042] 7. The temperature of the tube furnace 5 is raised to 1000 degrees Celsius;

[0043] 8. The carbon sou...

Embodiment 2

[0048] Prepare a graphene film on a nickel film by chemical vapor deposition, comprising the following preparation steps:

[0049] 1. Evaporate a nickel film with a thickness of 500 nm on the silicon substrate 7 by magnetron sputtering; place the silicon substrate 7 on which the nickel film has been evaporated in the quartz tube 4;

[0050] 2. Turn on the vacuum pump to pump the air pressure of the quartz tube 4 to the ultimate vacuum state of 8×10 -2 Torr;

[0051] 3. Set the inert gas flow meter 1 to 50 sccm, and inject helium into the vacuum chamber;

[0052] 4. After 5 minutes, close the valve of the inert gas flow meter 1, and pump the air pressure of the tube furnace 5 to the limit of 4×10 -2 Torr;

[0053] 5. Repeat step (3) and step (4) twice; until the residual oxygen in the quartz tube 4 is driven off until the oxygen partial pressure is less than 1×10 -6 Torr;

[0054] 6. Set the hydrogen flow meter 2 to 50 sccm, and inject hydrogen into the vacuum chamber;

...

Embodiment 3

[0061] Prepare a graphene film on a nickel film by chemical vapor deposition, comprising the following preparation steps:

[0062] 1. Evaporate a nickel film with a thickness of 500 nm on the silicon substrate 7 by magnetron sputtering; place the silicon substrate 7 on which the nickel film has been evaporated in the quartz tube 4;

[0063] 2. Turn on the vacuum pump to pump the air pressure of the quartz tube 4 to the ultimate vacuum state of 6×10 -2 Torr;

[0064] 3. Set the inert gas flow meter 1 to 100 sccm, and inject nitrogen into the vacuum chamber;

[0065] 4. After 5 minutes, close the valve of the inert gas flow meter 1, and pump the air pressure of the tube furnace 5 to the limit of 6×10 -2 Torr;

[0066] 5. Repeat step (3) and step (4) twice; until the residual oxygen in the quartz tube 4 is driven off until the oxygen partial pressure is less than 1×10 -6 Torr;

[0067] 6. Set the hydrogen flow meter 2 to 100 sccm, and inject hydrogen into the vacuum chambe...

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Abstract

The invention discloses a method for preparing single-layer or multi-layer graphene through chemical vapor deposition, and relates to a method for preparing a graphene material. The method comprises the following steps of: placing a metal substrate in a vacuum tubular furnace or a vacuum atmosphere furnace; injecting hydrogen into a vacuum cavity under the situation of removing the oxygen in the vacuum cavity; heating to 800-1,100 DEG C; and injecting a carbon source gas into the vacuum cavity to obtain the metal substrate for depositing graphene. According to the method disclosed by the invention, a graphene film is deposited by cracking methane or other carbon source gases on the metal substrate (such as a copper foil or a nickel foil and the like) at a high temperature by using the chemical vapor deposition method; and therefore, the invention provides a method for preparing the single-layer or multi-layer graphene with an ultra-large area.

Description

technical field [0001] The invention relates to a preparation method of a graphene material. Background technique [0002] Graphene, English name Graphene, is a two-dimensional lattice structure in which carbon atoms are arranged in a hexagonal manner. As a single-layer carbon-atom planar material, graphene can be obtained by exfoliating graphite materials. Graphene has become the focus of scientific and industrial attention since the graphite crystal film was discovered by scientists at the University of Manchester in 2004. The thickness of graphene is only 0.335 nanometers, which is not only the thinnest among known materials, but also very firm and hard; as a simple substance, it transfers electrons faster than all known conductors and semiconductors at room temperature (graphene Electrons move at 1 / 300 the speed of light). Due to the special atomic structure of graphene, the behavior of carriers (electrons and holes) must be described by relativistic quantum mechanics...

Claims

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Application Information

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IPC IPC(8): C23C16/26
CPCC23C16/26B82Y30/00B82Y40/00C01B32/186C01B2204/02C01B2204/04
Inventor 瞿研
Owner 无锡第六元素高科技发展有限公司
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