Preparation method of self-supporting multiferroics composite film

Abstract

The invention discloses a preparation method of a self-supporting multiferroics composite film. According to the method, a plating platinum silicon chip comprising a silicon chip layer, an interface layer and a nano-scale thickness platinum thin layer is adopted, the plating platinum silicon chip is put into a hydrofluoric acid solution to make the interface layer of the plating platinum silicon chip react with the hydrofluoric acid to be etched, the platinum film disengages from the silicon chip and floats on the solution surface, the platinum film is transferred into a vessel filled with deionized water for washing, the platinum film is flatly paved on a substrate prepared by an exotic material and is dried and a ferroelectric layer film and a ferromagnetic layer film are deposited in order on the platinum film. Compared to the prior art, the preparation method of the invention is characterized by low cost, mild preparation condition and simple and controllable technology. Besides, the self-supporting multiferroics composite film obtained is more sensitive to extraneous stimulations because the film is free from the influence of a substrate fettering force and the magnetic electric coupling coefficient of the multiferroics composite film can be raised.

Description

technical field [0001] The invention relates to the technical field of thin film materials, in particular to a preparation method of a self-supporting multiferroic composite thin film. Background technique [0002] Multiferroic materials refer to materials that have two or more basic ferrotypes in materials at the same time. These basic ferrotypes include ferroelectricity (antiferroelectricity), ferromagnetism (antiferromagnetism, ferrimagnetism) and iron elasticity. In multiferroic materials, the magnetism of the material can be controlled by an electric field or the electrical polarization of the material can be controlled by a magnetic field. This phenomenon is the so-called magnetoelectric coupling effect. [0003] Compared with conventional devices, the magnetoelectric coupling effect provides an additional avenue for device design. From the application point of view, multiferroic materials are divided into bulk multiferroic materials and thin film multiferroic materi...

AI Technical Summary

Problems solved by technology

The laser etching method is to use a laser to etch the substrate of the substrate film to prepare a self-supporting film. This method requires laser equipment, so the cost is relatively high

The carbon sacrificial layer method uses high temperature treatment to convert the carbon layer of the film into gas to separate the bottom electrode from the original substrate, and then prepare a self-supporting film on the bottom electrode. Since the gas generated during the removal of the carbon sacrificial layer is easy to break the bottom electrode, Therefore, the operability of this method is not good

The thermal expansion stripping method refers to the large difference in the thermal expansion coefficient between the film and the substrate during the rapid annealing process to separate the film from the substrate, thereby preparing a self-supporting film. This method has poor controllability

The self-supporting film prepared by ion crystal slicing method and casting method is relatively thick, generally between a few microns and hundreds of microns, which is not easy to miniaturize the device

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