Method for removing silicon solar cell diffusion death layer

A technology of silicon solar cells and diffusion dead layer, applied in the field of solar cells, can solve the problems of difficult control of square resistance, difficult control of corrosion uniformity, difficult to control etching thickness, etc., so as to improve the photoelectric efficiency and accurately control the etching thickness of silicon , the effect of low cost

Inactive Publication Date: 2011-11-16
CSI CELLS CO LTD +1
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  • Claims
  • Application Information

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Problems solved by technology

[0005] However, the corrosion uniformity of the above-mentioned first method is difficult to control, that is, it is not easy to control the etching thi

Method used

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Embodiment 1

[0020] Taking the preparation of an existing conventional battery as an example, the steps are as follows:

[0021] (1) P-type silicon wafer to remove damaged layer, texture,

[0022] (2) Front-diffused phosphorus to prepare emitter junction;

[0023] (3) Soak the diffused silicon wafer in 5% HF for 5 minutes to remove the phosphosilicate glass on the surface;

[0024] (4) Put the cleaned silicon wafer as an anode into an anodizing device for anodizing, at room temperature, with a voltage of 50V, anodizing time of 1min, and the thickness of the silicon dioxide produced is 20 nm;

[0025] (5) Soak the silicon wafer in HF acid to remove the above-mentioned silicon dioxide; according to the ratio of 0.44nm of silicon is consumed for every 1nm of silicon oxide formed, the silicon removal thickness on the surface is 8.8nm;

[0026] (6) Remove peripheral knots and clean;

[0027] (7) Deposition of anti-reflection film;

[0028] (8) Front and back electrode printing;

[0029] (9...

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Abstract

The invention discloses a method for removing a silicon solar cell diffusion death layer. The method comprises the following steps: (1) removing phosphorosilicate glasses of a diffused silicon chip; (2) carrying out oxidation treatment on a surface of the silicon chip so as to form a silicon dioxide layer; (3) removing the silicon dioxide layer. In the invention of the invention, an oxidation process is adopted to form the silicon dioxide layer on the surface of the diffused silicon chip. A part of silicon is consumed by oxidation so that the oxidation silicon layer is formed, and then the oxidation silicon layer is removed so as to reach a purpose of etching away a layer of the silicon surface. The diffusion death layer is removed. Recombination of the high density surface diffusion layer can be reduced. Short-wave responses can be raised. Experiments confirm that by using the method of the invention, a short circuit current of the solar cell can raise 1% and photoelectric efficiency of the cell can raise 0.1-0.2.

Description

technical field [0001] The invention relates to a method for removing a diffusion dead layer of a silicon solar cell, belonging to the field of solar cells. Background technique [0002] Conventional fossil fuels are increasingly depleted. Among all sustainable energy sources, solar energy is undoubtedly the cleanest, most common and most potential alternative energy source. At present, among all solar cells, silicon solar cells are one of the solar cells that have been widely commercialized. This is because silicon materials are extremely abundant in the earth's crust, and silicon solar cells have Excellent electrical and mechanical properties, therefore, silicon solar cells occupy an important position in the field of photovoltaics. [0003] At present, the conventional production process of silicon solar cells includes: texturing, diffusion, insulation, coating, silk screen sintering. Among them, diffusion is a key step in solar cell power generation, so the characteris...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 王登志王栩生章灵军
Owner CSI CELLS CO LTD
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