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Preparation method of Bi1.5MgNb1.5O7 (BMN) dielectric film

A dielectric thin film, bismuth magnesium niobate technology, applied in chemical instruments and methods, niobium compounds, inorganic chemistry, etc., can solve the problems of difficult control of chemical components, high target density requirements, etc., achieve good application prospects and low cost , Precisely control the effect of chemical components

Inactive Publication Date: 2011-11-23
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to overcome the disadvantages of the magnetron sputtering process, such as high requirements on target density and difficult control of chemical components, and to provide a bismuth magnesium niobate medium with a cubic pyrochlore structure prepared by the polymer precursor method Film Preparation Method

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] 1. Preparation of citric acid aqueous solution of niobium

[0032] (a) According to Bi 1.5 MgNb 1.5 o 7 The stoichiometric ratio weighs 0.003mol of Nb 2 o 5 , the Nb 2 o 5 Put in 5ml hydrofluoric acid, heat in water bath to Nb 2 o 5 all dissolved;

[0033] (b) adding ammoniacal liquor to the above-mentioned solution to adjust the pH value to 8 to generate niobic acid precipitation;

[0034] (c) Suction filter and wash the above precipitate, then add niobic acid into the aqueous solution of citric acid, and heat in a water bath so that the niobic acid is completely dissolved in the aqueous solution of citric acid to obtain the aqueous solution of niobium citric acid, the content of citric acid is 0.012mol.

[0035] 2. Add ethylene glycol to the niobium citric acid aqueous solution prepared in step 1, heat and stir, and the amount of ethylene glycol added is 0.012mol.

[0036] 3. Preparation of ethylene glycol solution of magnesium and bismuth

[0037] (a) Pres...

Embodiment 2

[0047] 1. Preparation of citric acid aqueous solution of niobium

[0048] (a) According to Bi 1.5 MgNb 1.5 o 7 The stoichiometric ratio weighs 0.003mol of Nb 2 o 5 , the Nb 2 o 5 Put in 6ml hydrofluoric acid, heat in water bath to Nb 2 o 5all dissolved;

[0049] (b) adding ammoniacal liquor to the above-mentioned solution to adjust the pH value to 9 to generate niobic acid precipitation;

[0050] (c) Suction filter and wash the above precipitate, then add niobic acid into the aqueous solution of citric acid, and heat in a water bath so that the niobic acid is completely dissolved in the aqueous solution of citric acid to obtain an aqueous solution of niobium citric acid, the content of which is 0.02mol.

[0051] 2. Add ethylene glycol to the niobium citric acid aqueous solution prepared in step 1, heat and stir, and the amount of ethylene glycol added is 0.08mol.

[0052] 3. Preparation of ethylene glycol solution of magnesium and bismuth

[0053] (a) Press Bi 1.5 ...

Embodiment 3

[0063] 1. Preparation of citric acid aqueous solution of niobium

[0064] (a) According to Bi 1.5 MgNb 1.5 o 7 The stoichiometric ratio weighs 0.003mol of Nb 2 o 5 , the Nb 2 o 5 Put in 8ml hydrofluoric acid, heat in water bath to Nb 2 o 5 all dissolved;

[0065] (b) adding ammoniacal liquor to the above-mentioned solution to adjust the pH value to 9 to generate niobic acid precipitation;

[0066] (c) suction filter and wash the above precipitate, then add niobic acid into the aqueous solution of citric acid, and heat in a water bath so that the niobic acid is completely dissolved in the aqueous solution of citric acid to obtain a citric acid aqueous solution of niobium, the content of citric acid is 0.028mol.

[0067] 2. Add ethylene glycol to the niobium citric acid aqueous solution prepared in step 1, heat and stir, and the amount of ethylene glycol added is 0.056mol.

[0068] 3. Preparation of ethylene glycol solution of magnesium and bismuth

[0069] (a) Press ...

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Abstract

The invention discloses a preparation method of a BMN dielectric film, comprising the steps of: (1) preparing a citric acid water solution of niobium; (2) adding glycol into the water solution, and conducting heating and stirring; (3) preparing a glycol solution of magnesium and bismuth; (4) adding the prepared glycol solution of magnesium and bismuth into the solution obtained in step (2), thus obtaining a bismuth-magnesium-niobium sol; (5) adding ethanol into the bismuth-magnesium-niobium sol, and carrying out heating and stirring so as to obtain a bismuth-magnesium-niobium precursor solution; (6) coating a substrate with the precursor solution uniformly and drying the substrate; (7) subjecting a dried film to a heat treatment at a temperature of 500-800DEG C for 10min; (8) repeating step (6) and (7) so as to prepare a multilayered film; (9) conducting a heat treatment to the multilayer film at a temperature of 550-800DEG C for 0.5-2h, thus obtaining a BMN dielectric film with a cubic pyrochlore structure. With accurately controlled chemical components and high density, the BMN dielectric film provided in the invention has no crack and pin hole as well as other defects. Characterized by simple process and low cost, the film of the invention as a microwave dielectric adjustable material boasts good application prospects.

Description

technical field [0001] The invention relates to the field of electronic information materials and components, in particular to a Bi 1.5 MgNb 1.5 o 7 A method for preparing a dielectric thin film material. Background technique [0002] With the rapid development of microwave communication systems, people put forward higher requirements for microwave devices, especially microwave tuning devices. Microwave devices with fast response speed, small size, wide frequency band, high sensitivity, and low operating voltage are indispensable components of current and next-generation communication systems. These requirements have brought great challenges to current electronic materials and components. [0003] Microwave dielectric tunable materials have broad application prospects in microwave tunable components, such as phase shifters, resonators, and filters on phased array antennas. As far as the material system is concerned, barium strontium titanate BST (Ba x Sr 1-x TiO 3 )-...

Claims

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Application Information

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IPC IPC(8): C01G33/00C03C17/22
Inventor 李玲霞宁平凡吴海涛冀璐洁王洪茹
Owner TIANJIN UNIV
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