MgxZn1-xO electrically induced resistance change film and preparation method of asymmetrical structure heterojunction thereof

A mgxzn1-xo, asymmetric structure technology, applied in the field of preparation of MgxZn1-xO resistive film and its asymmetric structure heterojunction, can solve the problems of reducing market competitiveness, high unit cost, long period of time and so on , to achieve the effect of low cost, reducing internal stress and improving performance

Inactive Publication Date: 2011-11-23
GUILIN UNIV OF ELECTRONIC TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

PRAM relies on the phase-change resistance change of a specific material to store data. The memory cells include resistors and switching transistors. However, when PRAM is manufactured using the traditional DRAM process, etching is more difficult and takes a longer period of time. , low productivity and high unit cost will reduce market competitiveness

Method used

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  • MgxZn1-xO electrically induced resistance change film and preparation method of asymmetrical structure heterojunction thereof
  • MgxZn1-xO electrically induced resistance change film and preparation method of asymmetrical structure heterojunction thereof
  • MgxZn1-xO electrically induced resistance change film and preparation method of asymmetrical structure heterojunction thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0045] (1) Use the glass coated with ITO transparent conductive film as the substrate, and perform surface treatment and cleaning on the glass substrate:

[0046] ① Soak in sodium hydroxide solution for 24 hours to remove the remaining attachments on the surface;

[0047] ② Ultrasonic cleaning with acetone for 10-15 minutes to remove organic matter on the substrate surface;

[0048] ③ Ultrasonic cleaning with ethanol for 8-15 minutes to remove hydrocarbons on the glass surface;

[0049] ④ Finally, ultrasonic cleaning with deionized water for 10 minutes to remove residual ethanol.

[0050] (2) Use the following raw materials (the purity of which is 99.99% of analytical purity) to prepare Mg 0.2 Zn 0.8 O-sol:

[0051] Zinc acetate (Zn(CH 3 COO) 2 2H 2 O) 52.68 grams

[0052] Magnesium acetate tetrahydrate (Mg(CH 3 COO) 2 4H 2 O) 12.867 grams

[0053] Ethanolamine 20.00ml

[0054] Ethylene glycol methyl ether 500ml

[0055] 500ml isopropyl alcohol

[0056] Among th...

Embodiment 2

[0070] (1) Use the glass coated with AZO transparent conductive film as the substrate, and perform surface treatment and cleaning on the glass substrate:

[0071] ① Soak in sodium hydroxide solution for 24 hours to remove the remaining attachments on the surface;

[0072] ② Ultrasonic cleaning with acetone for 10-15 minutes to remove organic matter on the substrate surface;

[0073] ③ Ultrasonic cleaning with ethanol for 8-15 minutes to remove hydrocarbons on the glass surface;

[0074] ④ Finally, ultrasonic cleaning with deionized water for 10 minutes to remove residual ethanol.

[0075] (2) Use the following raw materials (the purity of which is 99.99% of analytical purity) to prepare Mg 0.2 Zn 0.8 O-sol:

[0076] Zinc acetate (Zn(CH 3 COO) 2 2H 2 O) 87.80 grams

[0077] Magnesium acetate tetrahydrate (Mg(CH 3 COO) 2 4H 2 o) 21.445 grams

[0078] Ethanolamine 30.00ml

[0079] Ethylene glycol methyl ether 500ml

[0080]500ml isopropyl alcohol

[0081] Among the...

Embodiment 3

[0091] (1) Use the glass coated with ITO transparent conductive film as the substrate, and perform surface treatment and cleaning on the glass substrate:

[0092] ① Soak in sodium hydroxide solution for 24 hours to remove the remaining attachments on the surface;

[0093] ② Ultrasonic cleaning with acetone for 10-15 minutes to remove organic matter on the substrate surface;

[0094] ③ Ultrashock with ethanol for 8-15 minutes to remove hydrocarbons on the glass surface;

[0095] ④ Finally, supershock with deionized water for 10 minutes to remove residual ethanol.

[0096] (2) Use the following raw materials (the purity of which is 99.99% of analytical purity) to prepare Mg 0.1 Zn 0.9 O-sol:

[0097] Zinc acetate (Zn(CH 3 COO) 2 2H 2 O) 59.265 grams

[0098] Magnesium acetate tetrahydrate (Mg(CH 3 COO) 2 4H 2 o) 6.4335 grams

[0099] Ethanolamine 20.00ml

[0100] Ethylene glycol methyl ether 500ml

[0101] 500ml isopropyl alcohol

[0102] Among them: (a) solute ma...

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Abstract

The invention discloses a MgxZn1-xO electrically induced resistance change film and a preparation method of an asymmetrical structure heterojunction thereof. The preparation method comprises the steps of: using glass plated with ITO (Indium Tin Oxide), AZO and other transparent conductive oxide films as a substrate; dropping prepared MgxZn1-xO sol on the substrate, carrying out spinning-coating and making a wet film, carrying out low-temperature drying treatment; carrying out preheating treatment on the dried film until a MgxZn1-xO film with required thickness is obtained; annealing the MgxZn1-xO to ensure that the film is crystallized; naturally cooling a sample to obtain the MgxZn1-xO electrically induced resistance change film; and preparing a metal top electrode film on the surface of the film by adopting a direct-current magnetron sputtering process to obtain the asymmetrical structure heterojunction of a metal film/MgxZn1-xO/transparent conductive oxide film. The invention has the advantages of capability of realizing large-area film manufacture, low cost, higher high/low resistance ratio and lower setting voltage and resetting voltage and capability of greatly improving anti-fatigue property of the electrically induced resistance change film, and can be applied to the field of transparent electronics.

Description

technical field [0001] The invention relates to the field of materials and devices in microelectronics and optoelectronics, specifically a kind of Mg x Zn 1-x O electroresistive switching thin film and its asymmetric structure heterojunction preparation method. Background technique [0002] A semiconductor memory array structure may include a plurality of interconnected memory cells. For example, a unit memory cell of a dynamic random access memory (DRAM) may include switches and capacitors. DRAM can have higher integration and faster operation speed. However, when the power is turned off, all stored data is erased from DRAM, i.e. volatile, making the data lost. [0003] On the other hand, flash memory can be represented as a non-volatile memory capable of retaining stored data (unlike volatile memory) when the power is turned off, but the integration speed and operation speed are lower than DRAM. As the structural development of traditional storage units has approached...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
Inventor 王华高书明许积文杨玲周尚菊
Owner GUILIN UNIV OF ELECTRONIC TECH
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