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Reaction container for growing single crystal and method for growing single crystal

A technology of reaction vessel and cultivation method, which is applied in the field of reaction vessel for single crystal cultivation and cultivation of single crystal, and can solve problems such as unimproved oxygen content, difficulty in producing high-purity substances, and low purity of alumina

Inactive Publication Date: 2011-12-07
NGK INSULATORS LTD +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, it is stated in "The 68th Applied Physics Society Academic Lecture 4p-ZR-6 Presentation Materials in Fall 2007" that it is difficult to produce high-purity substances in yttrium oxide crucibles, and its purity is lower than that of alumina, and its corrosion resistance is better than that of alumina. However, the amount of impurities contained in the GaN crystal, especially the amount of oxygen, has not been improved (see page 15)

Method used

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Examples

Experimental program
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Embodiment 1

[0044] A cylindrical flat-bottomed crucible with an inner diameter of 70 mm and a height of 50 mm was prepared, and the culture raw materials (60 g of metal Ga, 60 g of metal Na, 0.1 g of carbon) were each melted in a glove box, and then filled with YAG (yttrium-aluminum-garnet; Y 3 Al 5 O 12 ) in the crucible. The physical properties of the yttrium-aluminum-garnet used in this example are as follows.

[0045] Purity: 99.99%, Si impurity content <10ppm

[0046] The crucible is filled with Na first and then with Ga to shield Na from the atmosphere and prevent oxidation. The melt height of the raw material in the crucible is about 20 mm. Next, a 2-inch diameter GaN plate (a 8-micron GaN single crystal thin film was epitaxially grown on the surface of the sapphire substrate) as a seed substrate was diagonally arranged on a platform for holding the seed substrate installed inside the crucible. The crucible was placed in a stainless steel container and sealed, and then placed ...

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Abstract

In the method of growing a single crystal by the flux method of a sodium-containing solution, a flux is contained in a reaction vessel composed of yttrium, aluminum, and garnet. Compared with the case of using alumina container or yttrium oxide container, the amount of impurities such as oxygen and silicon can be significantly reduced, and a single crystal with low residual carrier concentration, high electron mobility, and high resistivity can be successfully obtained .

Description

technical field [0001] The present invention relates to a method for cultivating a single crystal by a Na flux method and a reaction vessel used therefor. Background technique [0002] Gallium nitride thin-film crystals are attracting attention as an excellent blue light-emitting device, are put into practical use in light-emitting diodes, and are also expected to be used as blue-violet semiconductor laser devices for optical pickups. [0003] So far, crucibles such as p-BN, alumina, metal tantalum, and silicon carbide have been used, but all of them have some problems in corrosion resistance and will gradually dissolve (Japanese Patent Laid-Open No. 2003-212696; Japanese Patent Laid-Open No. 2003 -286098; Japanese Patent Laid-Open 2005-132663; Japanese Patent Laid-Open 2005-170685; Japanese Patent Laid-Open 2005-263512). [0004] In particular, when alumina is used, aluminum and oxygen decomposed from alumina and silicon decomposed from the silica component contained in al...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B9/10C30B29/38
CPCC30B29/406C30B29/403C30B19/06C30B35/002C30B19/02
Inventor 岩井真东原周平北冈康夫森勇介佐藤峻之永井诚二
Owner NGK INSULATORS LTD
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