Method for modifying mono-crystalline silicon slice into silicon carbide material of LED (Light Emitting Diode) substrate by using intense pulse ion beam

Abstract

The invention discloses a method for modifying a mono-crystalline silicon slice into a silicon carbide material of an LED (Light Emitting Diode) substrate by using an intense pulse ion beam. The method comprises the following steps of: processing mono-crystalline silicon to be a slice and placing the slice in front of an intense pulse ion beam target seat; vacuuming and then introducing proper argon by using graphite as an injection ion source emitter; shielding the mono-crystalline silicon slice by using a vacuum system baffle; starting the intense pulse ion beam; closing the argon; moving the baffle away and turning on a mechanical scanning system of a vacuum system; injecting C<+> into the front face and the back face of the mono-crystalline silicon slice by using the intense pulse ion beam; turning on an infrared heater to increase the temperature to 800 DEG C; introducing nitrogen after the vacuum system is cooled to be close to room temperature and opening a furnace to take silicon carbide crystals formed by ion beam modification; and finally packaging and warehousing. The method has skilful conception and is low in cost and convenient to operate; the surface of the silicon carbide material obtained by the method is particularly flat and smooth and does not have damage traces of mechanical cutting, grinding and polishing at all; the height of fluctuation of the surface is less than 1mum; the roughness of the surface is less than or equal to 0.1mum; and the Sic crystal lattice has superior quality and does not absorb visible light, is more suitable for a high-power white LED substrate material and is suitable to be widely applied.

Description

technical field [0001] The invention relates to the technical field of a silicon carbide material formed by modification of an intense pulsed ion beam, and the silicon carbide material is used as an LED substrate. Background technique [0002] Intense Pulse Ion Beam (IPIB) technology was developed in the mid-1970s as one of the controlled thermonuclear reaction and accelerator technologies. Its key components are high-energy pulse generators, short pulse shaping lines and Vacuum diodes; there are various types, and the commonly used technical indicators are: the implantation energy of the ion beam is 30-1000kev, the beam intensity is 0.2-150KA, the pulse width is 20-2000ns, and the repetition frequency is 0.2-18HZ / min. Beam spot area is 200 cm 2 about. Use IPIB injection to modify the surface of the tool and mold, the effect is very significant, as long as the injection volume reaches 10 14 ions / cm 2 , can be compared with conventional ion implantation 5x10 17 N + / cm...

AI Technical Summary

Problems solved by technology

In today's world, Japan's LED substrate materials are based on sapphire (Al 2 o 3 crystal), the United States and Germany mainly use silicon carbide (SiC), and high-quality commercial SiC is mainly monopolized by companies such as cree, which is expensive and difficult to provide Ф8in SiC

It is said that although my country has invented a special transition layer with a thickness of 1nm, which overcomes the lattice mismatch and thermal mismatch between the epitaxial layer (GaN) and the silicon substrate, and initially formed sapphire, silicon carbide and single The three-legged competition of crystalline silicon substrates; however, the problem of visible light absorption by monocrystalline silicon has not been completely solved