Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Thermally releasable sheet-integrated film for semiconductor back surface, method of collecting semiconductor element, and method of producing semiconductor device

A semiconductor and release sheet technology, which is applied in semiconductor devices, adhesive heating bonding methods, semiconductor/solid-state device manufacturing, etc., can solve problems such as production loss and difficulty in picking up semiconductor components, so as to improve production efficiency and prevent components damage, good pickup effects

Active Publication Date: 2012-03-14
NITTO DENKO CORP
View PDF22 Cites 23 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0014] However, in the case of the above-mentioned dicing tape-integrated film for semiconductor back surface, when the close adhesion between the pressure-sensitive adhesive layer and the film for semiconductor back surface is high, it becomes difficult to pick up the semiconductor element, and in extreme cases, can lead to loss of production in some cases

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Thermally releasable sheet-integrated film for semiconductor back surface, method of collecting semiconductor element, and method of producing semiconductor device
  • Thermally releasable sheet-integrated film for semiconductor back surface, method of collecting semiconductor element, and method of producing semiconductor device
  • Thermally releasable sheet-integrated film for semiconductor back surface, method of collecting semiconductor element, and method of producing semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0247] Preferred embodiments of the present invention will be exemplarily described in detail below. However, the present invention is not limited to the following examples unless it exceeds the gist of the present invention. In addition, parts in each example are by weight unless otherwise specified.

[0248]

[0249] By adding 100 parts of an acrylate polymer ("PARACRON W-197CM", trade name, product of Negami Chemical Industrial) containing ethyl acrylate-methyl acrylate as a main component, 113 parts of an epoxy resin ("Epicoat 1004" , trade name, product of JER), 121 parts of phenolic resin ("Milex XLC-3L", trade name, product of Mitsui Chemicals), 246 parts of spherical silica ("SO-25R", trade name, product of Admatechs) and 3 parts of dye ("OIL BLACK BS", trade name, product of Orient Chemical Industries) were dissolved in methyl ethyl ketone to prepare an adhesive composition solution having a solid concentration of 23.6% by weight.

[0250] The adhesive composition...

preparation example 1

[0253] A three-neck flask-type reactor equipped with a thermometer, a stirrer, a nitrogen gas introduction tube, and a reflux condenser and having an internal volume of 500 ml was filled with 50 parts of n-butyl acrylate, 50 parts of 2-ethylhexyl acrylate, 5 part of acrylic acid, 0.1 part of 2,2'-azobisisobutyronitrile and 200 parts of ethyl acetate to give a total of 200 g. The resulting mixture was stirred while introducing nitrogen gas for about 1 hour to purge the air inside the reactor with nitrogen gas. The temperature inside the reactor was then changed to 58° C. and polymerization was performed while maintaining this condition for about 4 hours to obtain an acrylic copolymer A.

[0254] An acrylic pressure-sensitive adhesive obtained by adding 2 parts of an isocyanate-based crosslinking agent to an ethyl acetate solution containing 100 parts of the acrylic copolymer A thus obtained was mixed with 35 parts of heat-expandable microspheres ("MICROSPHERE F -50D″, trade na...

preparation example 2

[0257] In a similar manner to Preparation Example 1, a thermally expandable layer was formed on one side of a 50 μm thick PET film. A 2 μm-thick anti-staining radiation-curable adhesive layer was provided on the resulting heat-expandable layer to obtain a heat-peelable pressure-sensitive adhesive sheet. The stain-resistant radiation-curable adhesive layer was set by mixing acrylic acid copolymer B with 100 parts of urethane acrylate, 3 parts of isocyanate crosslinking agent and 3 parts of photopolymerization initiator. The pressure-sensitive adhesive-like is applied to the release film, the resulting film is dried, and then transferred and pasted to the heat-expandable layer.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
peeling angleaaaaaaaaaa
viscosity indexaaaaaaaaaa
viscosity indexaaaaaaaaaa
Login to View More

Abstract

The present invention relates to a thermally releasable sheet-integrated film for semiconductor back surface, which includes: a pressure-sensitive adhesive sheet including a base material layer and a pressure-sensitive adhesive layer, and a film for semiconductor back surface formed on the pressure-sensitive adhesive layer of the pressure-sensitive adhesive sheet, in which the pressure-sensitive adhesive sheet is a thermally releasable pressure-sensitive adhesive sheet whose peel force from the film for semiconductor back surface decreases upon heating.

Description

technical field [0001] The present invention relates to a heat-release sheet-integrated film for back surface of a semiconductor, on which a film for back surface of semiconductor is mounted. The film for semiconductor back surface is used to protect the back surface of a semiconductor element such as a semiconductor chip, improve the strength of the back surface, and the like. The present invention also relates to a collection method of semiconductor elements and a production method of semiconductor devices each using a heat-release sheet-integrated film for semiconductor back surface. Background technique [0002] In recent years, thinning and miniaturization of semiconductor devices and their packages have been increasingly demanded. Therefore, as the semiconductor device and its package, a flip chip type semiconductor device in which a semiconductor element such as a semiconductor chip is mounted (flip chip connected) to a substrate by means of flip chip bonding has bee...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C09J7/02H01L21/68C09J7/29
CPCC09J2203/326C09J5/06H01L21/563H01L23/544H01L21/6836H01L24/81H01L2221/68327H01L2221/68381H01L2223/54433H01L2223/54486H01L24/13H01L24/16H01L2224/13111H01L2224/13144H01L2224/13147H01L2224/81193H01L2224/81203H01L2224/83104H01L2224/81911H01L2224/131H01L2224/16238H01L2224/73204H01L2924/10253C09J7/38C09J7/22C09J7/29Y10T428/25Y10T428/31504C09J2301/208C09J2301/412C09J2301/502C09J2301/408H01L2924/00014H01L2924/01082H01L2924/0103H01L2924/01083H01L2924/00012H01L2924/014H01L2924/01047H01L2924/01029H01L2924/00H01L21/324H01L24/50H01L24/26
Inventor 高本尚英志贺豪士浅井文辉
Owner NITTO DENKO CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products