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Integrated photodetecting device

A photoelectric sensing and stacking technology, which is applied in measuring devices, photovoltaic power generation, photometry, etc., can solve the problems of increased manufacturing costs, reduced accuracy and sensitivity, etc., to achieve reduced manufacturing costs, improved accuracy and sensitivity, and The effect of shortening the distance

Inactive Publication Date: 2012-05-09
苏炎坤
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, the photoelectric sensing device 10 in the prior art must use a complicated process, which increases the manufacturing cost; and the combination and the reflective layer 14 and the filter layer 13 are necessary, so that the accuracy and sensitivity are reduced.

Method used

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  • Integrated photodetecting device

Examples

Experimental program
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Embodiment Construction

[0056] refer to figure 2 , which shows a schematic diagram of the stacked photoelectric sensing device according to the first embodiment of the present invention. According to the first embodiment of the present invention, the stacked photoelectric sensing device 20 includes: a substrate 21 , a light-emitting layer 22 and a light-sensing layer 23 . The light emitting layer 22 is epitaxially formed on the substrate 21 . The photo-sensing layer 23 is epitaxially formed on the position opposite to the light-emitting layer 22 . In this embodiment, the substrate 21 is sapphire, silicon carbide, magnesium oxide, gallium oxide, lithium gallium oxide, lithium aluminum oxide, spinel, silicon, germanium, gallium arsenide, gallium phosphide, glass or diboride zirconium.

[0057] The material of the light-emitting layer 22 and the light-sensing layer 23 is a binary, ternary or quaternary compound composed of III-V compounds, that is, a group III (aluminum, gallium, indium, etc.) and a...

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Abstract

This invention relates to an integrated photodetecting device. The integrated photodetecting device includes a substrate, a light source layer and a photodetector layer. The photodetector layer and light source layer are epitaxied in a stacked structure. The whole device in this invention is fabricated by epitaxy method during a single process. Therefore, the production cost can be reduced by the omission of alignment process. Besides, the integrated photodetecting device of the invention integrates the light source and photodetector into one chip, hence has the ability of minimization, resulting in the reduction of consumption of samples and test time. The distance between the photodetector layer and targets to be tested can also be largely reduced, making the accuracy and sensitivity largely improved, and the kinds of detectable targets largely increased. Furthermore, the integrated photodetecting device of the invention is a portable device so as to increase the possibility of preventive medicine.

Description

technical field [0001] The invention relates to a photoelectric sensing device, in particular, to a stacked photoelectric sensing device. Background technique [0002] Currently, in the prior art biomedical optical detectors, a combination of a light source and a photodetector is required to achieve the required detection functions, and the current optical sensing platform of the prior art is a machine model, which is not only large and heavy, but also expensive , neither popular nor portable. In addition, the amount of the substance to be tested is relatively large, so the required detection time is relatively long. And the limitation of its precision and sensitivity makes the substances that can be measured have their limit range. [0003] refer to figure 1 , which shows a schematic diagram of a prior art photo-sensing device. The prior art photoelectric sensing device 10 includes: a substrate 11, a photosensitive layer 12, a filter layer 13, a combination and reflecto...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/101H01L31/0304G01J1/42H01L31/18
CPCG01J1/58H01L31/03044H01L31/02019H01L31/03048H01L31/03046H01L31/173Y02E10/544Y02P70/50
Inventor 苏炎坤黄士哲林建甫
Owner 苏炎坤
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