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Transparent rectifying metal/metal oxide/semiconductor contact structure and method for production thereof and use

A technology of rectifying contacts and semiconductors, which is applied in semiconductor devices, electric solid devices, photovoltaic power generation, etc., and can solve problems such as opaque contact structures

Inactive Publication Date: 2012-05-16
UNIV LEIPZIG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But the disclosed contact structure is opaque

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] Example 1: Rectifying, transparent Au / Ag on heteroepitaxial ZnO films x O-contact department

[0043] On the a-sapphire substrate a layer of zinc oxide, eg 1 micron thick, is deposited by pulsed laser deposition (PLD). Transparent Ag was applied by reactive sputtering of Ag in an argon / oxygen atmosphere without surface pretreatment x O point contacts (thicknessx The O point contacts are covered with a transparent gold layer (thickness<5 nm).

[0044] These contact structures function as diodes and can be used as rectifiers and can be used to detect electromagnetic radiation (photodiodes) or to detect adsorbed molecules (chemical sensors).

Embodiment 2

[0045] Embodiment 2: In ZnO-based, transparent MESFET (Metal Semiconductor Field Effect Transistor) (English is metal semiconductor field effect transistor, MESFET) contact part in

[0046] A zinc oxide layer of eg 20 nm thickness is deposited on the a-sapphire substrate by pulsed laser deposition (PLD). The mesa is processed from this layer by etching. Based on the above-mentioned contacts, the transparent Ag x The O gate-contact is applied to the mesa (Mesa). Next, a transparent, aluminum-doped, highly conductive zinc oxide is applied as a cover layer by means of PLD. The source and drain contacts are likewise produced by pulsed laser deposition (PLD) of transparent aluminum-doped zinc oxide with high conductivity.

[0047] Based on such MESFETs, fully transparent integrated circuits (eg inverters, logic elements) can be fabricated. The integrated circuit can also be used, for example, as a transparent switching element for pixel control in active-matrix liquid-cry...

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Abstract

The invention relates to transparent rectifying contact structures for application in electronic devices, in particular appertaining to optoelectronics, solar technology and sensor technology, and also a method for the production thereof. The transparent rectifying contact structure according to the invention has the following constituents: a) a transparent semiconductor, b) a transparent, non-insulating and non-conducting layer composed of metal oxide, metal sulphide and / or metal nitride, the resistivity of which is preferably in the range of 102 Omega cm to 107 Omega cm and c) a layer composed of a transparent electrical conductor wherein the layer b) is formed between the semiconductor a) and the layer c) and the composition of the layer b) is defined in greater detail in the description of the patent.

Description

technical field [0001] A contact structure is proposed which is preferably embodied as a transparent layer system and has rectifying properties. Furthermore, a method for implementing such a contact structure is shown and a possibility for the use of such a contact structure is given. In this case, the contact structure is formed at least from a preferably transparent semiconductor, a transparent metal oxide and a transparent electrical conductor. Background technique [0002] Multilayer contact structures with insulating or conducting properties are known from the prior art. In the case of an insulating contact structure, a metal-insulator-semiconductor junction (MIS) or in particular a metal-oxide-semiconductor junction (MOS) known from the silicon industry is realized. These semiconductor junctions are used in the fabrication of MIS diodes (eg for detecting electromagnetic radiation) and MOS field effect transistors (MOSFETs). [0003] In the field of conducting contac...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/108H01L31/18
CPCH01L31/18H01L31/108H01L2924/0002Y02E10/50H01L2924/00H01L31/10H01L31/06
Inventor 马里厄斯·格伦德曼海科·弗伦策尔亚历山大·拉金霍尔格·冯文科斯特恩
Owner UNIV LEIPZIG
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