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Process for modifying lead tungstate crystal by utilizing diffusion method

An ion diffusion method, lead tungstate technology, applied in crystal growth, diffusion/doping, chemical instruments and methods, etc., can solve the problems of lead tungstate crystal cracking, difficult to obtain high-quality lead tungstate crystals, etc., to achieve Reduce energy consumption and time, improve flicker performance, high quality effects

Active Publication Date: 2012-07-04
WENZHOU UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But to grow a lead tungstate crystal doped with ions, from the preparation of platinum crucible, directional cutting of seed crystal, charging, furnace charging to crystal heating, inoculation, and directional growth, it requires rich experience in growing lead tungstate crystals. Moreover, due to internal defects and thermal stress, the grown lead tungstate crystals are very easy to crack the lead tungstate crystals and form twins, and it is difficult to obtain high-quality lead tungstate crystals.

Method used

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  • Process for modifying lead tungstate crystal by utilizing diffusion method
  • Process for modifying lead tungstate crystal by utilizing diffusion method
  • Process for modifying lead tungstate crystal by utilizing diffusion method

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Experimental program
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Effect test

Embodiment 1

[0026] 1. PbO powder with 99.999% purity and WO with 99.999% purity 3 Powder is the raw material, according to n(PbO):n(WO 3 ) = 1:1 molar ratio precise ingredients, use the crucible drop method to grow lead tungstate crystals [see: Journal of Crystal Growth 2002, 236, 589-595.], orientate, cut and grind into 10mm× 10mm×2mm pure lead tungstate wafer, cleaned to obtain pure lead tungstate crystal samples;

[0027] 2. Put the pure lead tungstate crystal sample obtained in step 1 into a CeO with analytically pure purity. 2In the corundum crucible of powder, the pure lead tungstate crystal sample is tightly wrapped (such as figure 1 shown), then put the crucible into a muffle furnace to heat up at a rate of 15°C / min, the temperature rises to 1000°C, keeps the temperature for 24h, and then cools down to room temperature naturally, and the entire diffusion atmosphere is air;

[0028] 3. After the diffusion is over, the diffused lead tungstate crystal obtained in step 2 is cleaned...

Embodiment 2

[0030] 1, process step is with step 1 in embodiment 1;

[0031] 2. Put the lead tungstate crystal sample obtained in step 1 into a container with a purity of analytically pure Cr 2 o 3 In the corundum crucible of powder, the lead tungstate wafer is tightly wrapped, and then the crucible is put into the muffle furnace to raise the temperature, the heating rate is 15 ℃ / min, the temperature rises to 900 ℃, and the temperature is kept for 24 hours, and the temperature is naturally cooled to room temperature. The entire diffusion atmosphere is air;

[0032] 3. The process steps are the same as step 3 in Example 1. The fluorescence spectrogram of gained modified lead tungstate crystal sample is shown in image 3 .

Embodiment 3

[0034] 1, process step is with step 1 in embodiment 1;

[0035] 2. Put the pure lead tungstate crystal sample obtained in step 1 into a container with a purity of analytically pure Sm 2 o 3 In a corundum crucible of powder, the pure lead tungstate crystal sample is tightly wrapped, and then the crucible is placed in a muffle furnace to heat up at a heating rate of 15°C / min, the temperature rises to 800°C, and the temperature is kept for 24 hours, and the temperature is naturally cooled to At room temperature, the entire diffusion atmosphere is air;

[0036] 3. The process steps are the same as step 3 in Example 1. The fluorescence spectrogram of gained modified lead tungstate crystal sample is shown in Figure 6 .

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Abstract

The invention discloses a process for modifying a lead tungstate crystal by utilizing a diffusion method, which comprises the steps of (1) utilizing lead oxide (PbO) powder and tungsten trioxide (WO3) powder to serve as raw materials, performing accurate dosing according to the molar ratio of n (PbO) to n (WO3) being 1 to 1, and growing the lead tungstate crystal by using a bridgman method or a czochralski method; (2) accurately orientating, cutting and grinding generated lead tungstate crystal through an X ray orientation device into lead tungstate wafers with thicknesses of 2-5mm, and cleaning the lead tungstate wafers to obtain lead tungstate crystal samples; and (3) placing the lead tungstate crystal samples obtained in the step (2) into a crucible containing metallic oxide powder to enable the lead tungstate crystal samples to be tightly wrapped by the metallic oxide powder, placing the crucible into a muffle furnace, heating the muffle furnace to 800-1000 DEG C, finishing diffusion after keeping the temperature for 12-36 hours, cooling to the room temperature, and obtaining a modified lead tungstate crystal. The process for modifying the lead tungstate crystal by utilizing the diffusion method has the advantages of low energy consumption and high efficiency.

Description

technical field [0001] The invention relates to a method for modifying lead tungstate crystals with metal ions, and belongs to the technical field of single crystal performance modification. Background technique [0002] Scintillation crystals refer to crystals that emit ultraviolet or visible light under the irradiation of high-energy particles (X-rays or γ-rays), and photodetection devices such as photomultiplier tubes (PMTs), avalanche photodiodes (APDs) and silicon photodiodes (SPDs) ) and other components of detectors, which are widely used in high energy physics, nuclear physics, nuclear medical imaging and industrial CT, etc. With the rapid development of high-energy physics research projects, in order to explore the mysteries of the microcosm of space, people are now building large-scale accelerators and hadron colliders with increasing energy in the world, and scintillation crystals are the most powerful materials for building these devices. Core components - impor...

Claims

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Application Information

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IPC IPC(8): C30B31/02
Inventor 向卫东邵明国梁晓娟黄海宇陈兆平
Owner WENZHOU UNIVERSITY
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