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Silicon carbide ceramic heat-exchanging board and manufacturing method thereof

A technology of silicon carbide ceramics and heat exchange plates, applied in the field of engineering ceramic materials, can solve the problems of lack of design, low yield and difficulty in forming

Inactive Publication Date: 2012-07-04
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The rectangular design continues the shape of the metal heat exchanger, but for the ceramic material, the molding is relatively difficult and the yield is low
Moreover, due to the brittleness of the ceramic material, the vibration caused by the high-speed and high-pressure impact of the medium is easy to cause damage to the thin-walled structure.
[0008] Therefore, so far, silicon carbide ceramics have not been widely used in plate heat exchangers. The main reason is the lack of reasonable design, effective manufacturing and packaging processes, so its efficiency

Method used

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  • Silicon carbide ceramic heat-exchanging board and manufacturing method thereof
  • Silicon carbide ceramic heat-exchanging board and manufacturing method thereof

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preparation example Construction

[0102] The preparation method of heat exchange plate of the present invention comprises the steps:

[0103] (a) providing (85-95) parts by weight of silicon carbide powder, (0-15) parts by weight of sintering aid, and (0-2) parts by weight of binder for granulation to obtain powder;

[0104] (b) molding the powder in step (a) to obtain a silicon carbide green body;

[0105] (c) molding the silicon carbide green body to obtain a molded body, the molded body has a centrosymmetric structure, and the centrosymmetric structure includes a square or a circle; and the molded body is provided with a double-circuit heat exchange structure aisle;

[0106] (d) The molded body is subjected to subsequent steps to obtain the heat exchange plate.

[0107] granulation

[0108] In a preferred example, the sintering aid may include B 4 C-C, B-C, where C can be introduced as powder or produced by cracking organic matter. where B 4 The content of C or B is 0.2-2wt%, preferably 0.4-1.0wt%, ...

Embodiment 1

[0137] Mix 95wt% of silicon carbide powder, 1.0wt% of nano-carbon black and 0.4wt% of boron carbide powder in alcohol solution, add binder phenolic resin and mix in sand mill for 4 hours before spraying grain. The powder after spray granulation is dry-pressed and isostatically pressed into a square green body. The green body is processed into figure 1 Then heat treatment in a vacuum graphite resistance furnace, the temperature is 600 ° C for 4 hours, the heating rate is 1 ° C / min, the green body after heat treatment is sintered in a high temperature sintering furnace, 2150 ° C for 4 hours, Ar atmosphere, heating rate 2°C / min.

[0138] The parameters of the heat exchange plate after sintering are: the total thickness is 4mm, the depth of the heat exchange channel is 2mm, the width of the divider wall between the heat exchange channels is 2mm, the depth of the holes on the divider wall is 1.3mm, the width is 4mm, the spacing 15mm. The width of the dividing wall perpendicul...

Embodiment 2

[0141] Mix 95wt% of silicon carbide powder, 3.0wt% of nano-carbon black and 1.0wt% of amorphous boron powder in an aqueous solution, add binder phenolic resin and mix in a sand mill for 8 hours before spray granulation . The powder after spray granulation is dry-pressed and isostatically pressed into a round green body. The green body is processed into figure 2 Then heat treatment in a vacuum graphite resistance furnace, the temperature is 1200 ° C for 1 h, the heating rate is 5 ° C / min, the green body after heat treatment is sintered in a high temperature sintering furnace, 2250 ° C for 2 h, Ar atmosphere, heating rate 10°C / min.

[0142] The sintered furnace sample was tested to obtain a density of 98.6% T.D. and a thermal conductivity of 132W (m·K) at room temperature.

[0143] The parameters of the heat exchange plate after sintering are: the total thickness is 10mm, the depth of the heat exchange channel is 5mm, the width of the divider wall between the heat exchange...

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Abstract

The invention provides a silicon carbide ceramic heat-exchanging board. The heat-exchanging board is of a centrosymmetry structure in design shape, and the centrosymmetry structure can be quadrate or round; the heat-exchanging board is provided with a heat-exchanging channel of a dual loop structure; and the silicon carbide content of silicon carbide ceramic is not lower than 95wt% in terms of the total weight of the silicon carbide ceramic. The invention further provides a preparation method and application of the heat-exchanging board. The silicon carbide ceramic heat-exchanging board disclosed by the invention can be used for greatly increasing the heat-exchanging efficiency and prolonging the service of a heat exchanger.

Description

technical field [0001] The invention belongs to the technical field of engineering ceramic materials, and relates to a heat exchanger, more specifically to a silicon carbide ceramic heat exchange plate and a manufacturing method thereof, and the heat exchange plate has a heat exchange channel for cooling or heating medium inside. Background technique [0002] With the increasing global energy crisis, in order to effectively recover and utilize the excess heat of waste liquid and waste gas in various industrial fields, the demand for heat exchangers in industry is increasing, and the quality requirements for heat exchangers are also getting higher and higher. . [0003] The plate heat exchanger is a heat exchanger with a special structural form, which is compact in structure and high in heat exchange efficiency, and is widely used in direct heat exchange between two media. Due to the good machinability of metals, most heat exchange plate materials currently used are metal ma...

Claims

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Application Information

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IPC IPC(8): F28F3/00F28F21/04C04B35/565C04B35/622
Inventor 闫永杰黄政仁刘学建袁明陈健陈忠明
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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