Composite power semiconductor device
A power semiconductor and device technology, applied in the field of compound power semiconductor devices, can solve the problems of power device occupation, large chip area, etc.
Inactive Publication Date: 2014-04-09
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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And in actual production, power devices occupy a considerable chip area
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[0035] The composite power semiconductor device provided by the present invention has the characteristics of strong driving capability of LIGBT and fast speed of LDMOS, and realizes high withstand voltage and low on-resistance with the smallest possible chip area.
[0036] A compound power semiconductor device such as Figure 1~5 As shown, it is formed by a hybrid structure of LIGBT and LDMOS cascaded with JFET. The overall top view of the device is as figure 1 As shown, the AA' section structure (such as figure 2 shown) means LIGBT; BB' section structure (such as image 3 shown) means LDMOS; CC' section structure (such as Figure 4 Shown) means JFET; DD' section structure (such as Figure 5 shown) represents the curvature of the device.
[0037] The LIGBT as figure 2 As shown, including p-type substrate 1, N well region 6, P-body region 12, P well region 13, n + Cathode 2, P + Anode 5, gate 3, dielectric layer 14, polycrystalline field plate 7, cathode metal 15 and ...
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The invention discloses a composite power semiconductor device, and belongs to the technical field of semiconductor devices. According to the composite power semiconductor device, an LIGBT (Lateral Insulated Gate Bipolar Transistor), an LDMOS (Laterally Diffused Metal Oxide Semiconductor) and a JFET (Junction Field Effect Transistor) are integrated into a whole, wherein the LIGBT and the LDMOS form a hybrid parallel-connection structure, and the LIGBT / LDMOS hybrid structure is cascaded with the JFET. In the LIGBT / LDMOS hybrid structure, the LIGBT and the LDMOS share a grid, an n<+> cathode of the LIGBT and an n<+> source electrode of the LDMOS are shared, P<+> anodes of the LIGBT and n<+> drain electrodes of the LDMOS are alternatively distributed; a curvature part of the LIGBT / LDMOS hybrid structure is in an LDMOS structure; and the LDMOS and the JFET share an n<+> drain electrode 4, and an n<+> source electrode 8 of the JFET is made in a part of an N well region 6, which outwards extends towards the LIGBT / LDMOS hybrid structure. The composite power semiconductor device has the characteristics of strong driving capacity of the LIGBT and high speed of the LDMOS, can provide a larger output current, and has enhanced stability. Due to the adoption of a Double-RESURF technology and the sharing of the drain electrode of the JFET and the drain electrode of the LDMOS, high voltage resistance and low on resistance of the composite power semiconductor device are realized by using least chip area, and the manufacture cost of a power IC (Integrated Circuit) based on the composite power semiconductor device is greatly reduced.
Description
technical field [0001] The invention belongs to the technical field of semiconductor devices, and relates to a power field effect transistor (High-Voltage Field Effect Transistor), especially a lateral diffusion field effect transistor LDMOS (Laterally Double-Diffusion MOSFET), a lateral insulated gate bipolar transistor LIGBT (Laterally IGBT) and Junction Field Effect Transistor JFET (Junction Field Effect Transistor) is a three-in-one composite power semiconductor device. Background technique [0002] Power semiconductor devices refer to semiconductor devices with high withstand voltage, high current, and power processing, including frequency conversion, voltage conversion, current conversion, power amplification, power management, etc., in the fields of computers, communications, consumer products and automotive electronics. The represented 4C market has extremely important applications. Among them, the power field effect transistor is an important part of the power semi...
Claims
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IPC IPC(8): H01L27/06
Inventor 乔明温恒娟向凡周锌何逸涛张波李肇基
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA