Radiation-sensitive resin composition, polymer and resist pattern formation method

一种树脂组合物、敏感性的技术，应用在放射线敏感性树脂组合物领域，能够解决装置昂贵等问题

Active Publication Date: 2012-07-18
JSR CORPORATIOON
View PDF14 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, reducing the wavelength of the light source requires a new exposure device, and such a device is expensive
In addition, since the resolution and the depth of focus are in a trade-off relationship when the number of openings of the lens is increased, there is a disadvantage that the depth of focus will decrease even if the resolution is increased.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Radiation-sensitive resin composition, polymer and resist pattern formation method
  • Radiation-sensitive resin composition, polymer and resist pattern formation method
  • Radiation-sensitive resin composition, polymer and resist pattern formation method

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0284]

[0285] This radiation-sensitive resin composition can be prepared by mixing, for example, [A] polymer, [B] polymer, [C] acid generator, and optional components as necessary in a predetermined ratio. Generally speaking, when the radiation-sensitive resin composition is used, it is dissolved in a solvent so that the total solid content concentration is 1-50% by mass, preferably 3-25% by mass, and the pore size is 0.02. Filter with a filter of about μm to prepare a composition solution.

[0286] As the solvent used for preparing the composition solution, for example, linear or branched ketones; cyclic ketones; propylene glycol monoalkyl ether acetates; 2-hydroxypropionic acid alkyl esters; 3 -Alkoxy propionic acid alkyl esters;

[0287] N-propanol, isopropanol, n-butanol, tert-butanol, cyclohexanol, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol mono-n-propyl ether, ethylene glycol mono-n-butyl ether, two Ethylene glycol dimethyl ether, d...

Embodiment

[0315] Hereinafter, examples are given to further specifically explain the embodiments of the present invention, but the present invention is not restricted by these examples at all. Here, as long as there is no special statement, "parts" is the quality standard. The measurement of physical properties in this example was carried out according to the following method.

[0316] [Weight average molecular weight (Mw) and number average molecular weight (Mn)]

[0317] For the Mw and Mn of [A] polymer and [B] polymer, use GPC columns manufactured by Tosoh Corporation (2 G2000HXL, 1 G3000HXL, 1 G4000HXL) at a flow rate of 1.0 mL / min and use tetrahydrofuran as the elution solvent Measured by gel permeation chromatography (GPC) using monodisperse polystyrene as the standard under analytical conditions at a column temperature of 40°C. In addition, the dispersion degree (Mw / Mn) was calculated from the measurement results of Mw and Mn.

[0318] [ 13 C-NMR analysis]

[0319] For [A] polymer and...

Synthetic example 1

[0325] (Synthesis of polymer (A-1))

[0326] First, prepare 60 mol% of the above-mentioned compound (M-1), 25 mol% of the compound (M-7), 15 mol% of the compound (M-8), and an initiator (2, 2') as monomers. -A monomer solution obtained by dissolving azobisisobutyronitrile (AIBN) in 50 g of 2-butanone. The total amount of charged monomers was 50 g. In addition, the mol% of each monomer means mol% with respect to the total amount of monomers, and the use ratio of the initiator is 5 mol% with respect to the total amount of the monomer and the initiator.

[0327] On the other hand, 50 g of 2-butanone was added to a 500 mL three-necked flask equipped with a thermometer and a dropping funnel, and nitrogen purge was performed for 30 minutes. After that, the inside of the flask was heated to 80°C while being stirred with a magnetic stirrer.

[0328] Next, the monomer solution was dropped into the flask over 3 hours using a dropping funnel. After the dropwise addition, it was aged for 3 h...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
aperture sizeaaaaaaaaaa
coating thicknessaaaaaaaaaa
coating thicknessaaaaaaaaaa
Login to view more

Abstract

Disclosed is a radiation-sensitive resin composition which enables the acquisition of good pattern shape, exhibits excellent MEEF performance and is not prone to generating flaws such as bridges. Further disclosed are a polymer which is ideal for use in the radiation sensitive resin composition and a pattern formation method which uses the radiation sensitive resin composition. The composition contains: [A] a polymer which includes at least one structural unit (I) selected from a plurality of structural units, each independently represented by formula (1-1) or formula (1-2), and which includes at least 5 mass % of fluorine atoms; [B] a polymer which includes an acid-cleavable group and which includes less than 5 mass % of fluorine atoms; and [C] a radiation-sensitive acid generator.

Description

Technical field [0001] The present invention relates to a radiation-sensitive resin composition, polymer, and resist pattern forming method. Background technique [0002] In the field of microfabrication for manufacturing integrated circuit elements, in order to obtain a higher degree of integration, a lithography technology capable of performing microfabrication at a level of 0.10 μm or less (sub-quarter micron level) is desired. However, in the conventional lithography technology, since near ultraviolet rays such as i-rays are used as radiation, the above-mentioned level of microfabrication is extremely difficult. Therefore, in order to be able to perform microfabrication at the above-mentioned level, the development of a lithography technology using radiation of a shorter wavelength has been carried out. Examples of shorter-wavelength radiation include bright-ray spectrum of mercury lamps, far ultraviolet rays such as excimer lasers, X-rays, electron beams, etc. Among them, K...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/039C08F220/22
CPCC08L101/00G03F7/11G03F7/2041G03F7/0397C08L33/14G03F7/0046C08F220/22G03F7/00G03F7/039C08F220/24C08F228/00
Inventor 切通优子成冈岳彦西村幸生浅野裕介川上峰规中岛浩光
Owner JSR CORPORATIOON
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap