Silicon wafer chemical-mechanical polishing composition with high dilution ratio and high stability

A polishing composition, high stability technology, applied in the direction of polishing composition containing abrasives, etc., can solve the problems of not meeting the requirements of planarization of integrated circuits, high cost of polishing composition, increase of polishing damage layer, etc., to achieve polishing Effect of rate acceleration, improvement of pH buffering performance, and reduction of surface roughness

Inactive Publication Date: 2012-08-01
JIANGSU TIANHENG NANO SCI & TECH
View PDF6 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Many manufacturers use larger particle size silica sols as abrasives in polishing compositions, resulting in increased polishing damage layers and increased surface scratches
Moreover, this will also lead to a relatively high cost of the polishing composition itself, which cannot meet the requirements for planarization of integrated circuits.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] Prepare 100g of the chemical mechanical polishing composition for silicon wafers, the preparation process is as follows: add 2.0g 10wt% tetramethylammonium hydroxide aqueous solution to 93.23g 60-80nm 41wt% silica sol; 1g ethanolamine; 0.3g diethylenetri Amine; 0.1g AMP-95, 0.01g glycine, 0.01g TX-10, 0.35g potassium carbonate, 3g pH=11 buffer system. It is prepared by mixing and stirring, and the pH of the prepared polishing composition is 11.23.

[0031] Use and result analysis: When using the polishing composition, first dilute the prepared polishing composition with deionized water at a ratio of 1:30, perform polishing experiments on silicon wafers that pass the inspection, and paste the polished silicon wafers On the polishing disc of Lanzhou Ruide large-scale single-sided polishing machine, fix the polishing disc with silicon wafer on the polishing head of the machine, control the polishing pressure at about 0.16MPa, control the speed of the upper polishing disc t...

Embodiment 2

[0033] Prepare 100g of silicon wafer chemical mechanical polishing composition, the preparation process is as follows: add 0.05g tetramethylammonium hydroxide, 0.04g hydroxyethyl ethylenediamine, 0.01g AMP to 98.84g 60-80nm 41wt% silica sol -95 is prepared by mixing and stirring 0.8g trisodium nitrilotriacetate, 0.1g AEO-9, 0.01g sodium bicarbonate, and 0.15g buffer system with pH=12, and the pH of the prepared polishing composition is 11.42.

[0034] Use and result analysis: When using the polishing composition, first dilute the prepared polishing composition with deionized water at a ratio of 1:40, perform polishing experiments on silicon wafers that pass the inspection, and paste the polished silicon wafers On the polishing disc of Lanzhou Ruide large-scale single-sided polishing machine, fix the polishing disc with silicon wafer on the polishing head of the machine, control the polishing pressure at about 0.16MPa, control the speed of the upper polishing disc to 60rpm, and ...

Embodiment 3

[0036] Prepare 100g of silicon wafer chemical mechanical polishing composition, the preparation process is as follows: add 10g 5wt% isopropanolamine aqueous solution to 85.74g 60-80nm 41wt% silica sol; 1g ethanolamine; 1.3g diethylenetriamine; 0.2g AMP-95 is prepared by mixing and stirring 0.15g glycine, 1g TX-10, 0.6g dipotassium hydrogen phosphate, and 0.01g pH=12 buffer system, and the pH of the prepared polishing composition is between 11.15.

[0037] Use and result analysis: When using the polishing composition, first dilute the prepared polishing composition and deionized water at a ratio of 1:45, perform polishing experiments on silicon wafers that pass the inspection, and paste the polished silicon wafers On the polishing disc of Lanzhou Ruide large-scale single-sided polishing machine, fix the polishing disc with silicon wafer on the polishing head of the machine, control the polishing pressure at about 1.8kPa, control the speed of the upper polishing disc to 60rpm, an...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provided a silicon wafer chemical-mechanical polishing composition with high dilution ratio and high stability, which comprises an abrasive material, salt, a potential of hydrogen (pH) conditioning agent, a chelating agent, an active agent and a buffer system. The silicon wafer chemical-mechanical polishing composition with the high dilution ratio and high stability has the technical advantages that (1) the scientific reasonable buffer system is selected, the pH of the polishing composition is not improved blindly, the variation amplitude of a pH value is small in polishing process, the quality of the silicon wafer surface is good after polishing, and surface scratch and other damages do not exist; (2) when the polishing composition is prepared, a material for stabilizing silica sol particles is added so as to enable the particles in the preparation process of the polishing composition to be balanced highly, and the specific buffer system can increase the pH buffering performance of diluent, enables the pH of the polishing composition to be maintained at a certain level and stabilizes the polishing speed; (3) the polishing composition is simple in preparation process and suitable for industrial production, and the using cost of the polishing composition can be reduced.

Description

technical field [0001] The invention relates to a chemical mechanical polishing composition, in particular to a silicon wafer chemical mechanical polishing composition with high dilution ratio and high stability for integrated circuit silicon substrates. Background technique [0002] With the transition from 300nm to 450nm and even larger diameters, increased production efficiency, reduced cost, and global planarization of substrates are necessary for faster development of CMP technology. [0003] The current situation of CMP technology is that with the further high density, miniaturization and high speed of IC devices, more and more types of dielectric materials and metals are used, such as more and more types of high dielectric materials and metals. In order to planarize the surface of the wafer, chemical mechanical polishing must be carried out on the medium and metal. For integrated circuits below 0.25 microns, more than 10 chemical mechanical polishings are required. ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C09G1/02
Inventor 李薇薇
Owner JIANGSU TIANHENG NANO SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap