Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

MgZnO/N-propyl bromide (NPB) ultraviolet light detector and producing method thereof

A technology of ultraviolet light and detectors, applied in the field of optoelectronic information, can solve the problems of low organic electron mobility, p-type doping of inorganic wide bandgap semiconductors, etc.

Inactive Publication Date: 2014-11-26
BEIJING JIAOTONG UNIV
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The technical problem to be solved by the present invention is to solve the problem of p-type doping of inorganic wide bandgap semiconductors and the problem of low organic electron mobility

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • MgZnO/N-propyl bromide (NPB) ultraviolet light detector and producing method thereof
  • MgZnO/N-propyl bromide (NPB) ultraviolet light detector and producing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0018] A MgZnO / NPB ultraviolet light detector, the ultraviolet light detector is a single-phase Mg grown on a quartz ITO substrate x Zn 1-x O thin film, NPB thin film, LiF thin film and electrode. The single-phase Mg x Zn 1-x In O, X=0.1-0.4, and the thickness is 200-350nm; the thickness of the NPB film is 50-120nm; the thickness of the LiF film is 0.5-2nm.

[0019] A kind of MgZnO / NPB ultraviolet photodetector manufacture method one, the step of this method comprises:

[0020] Step 1 imports the cleaned quartz ITO substrate into the pre-growth chamber of MBE;

[0021] Step 2: Treat in the pre-growth chamber at 750°C for 30 minutes;

[0022] Step 3. The quartz ITO substrate processed in step 2 is introduced into the growth chamber of MBE, and at a growth temperature of 400°C, Mg with a thickness of 200nm is grown. x Zn 1-x O film, where X=0.1;

[0023] Step 4 will Mg x Zn 1-x The O thin film is introduced into the thermal evaporation, and the Mg x Zn 1-x On the O f...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

An MgZnO / NPB ultraviolet light detector and a producing method thereof belong to the field of optoelectronic information, are mainly used for ultraviolet light detectors which generate low bias voltage and high response and solve the problems of inorganic wide band-gap semiconductor p-type doping and low organic electronic mobility. The detector is composed of a single phase MgxZn1-xO film which is grown on a quartz indium tin oxide (ITO) substrate, a NPB film, an LiF film and an electrode. The producing method thereof comprises that the quartz ITO substrate is pretreated in a molecular beam epitaxy (MBE) growth chamber; the MgxZn1-xO film with the thickness of 200-300nm is grown at the growth temperature of 400-500 DEG C inside the MBE growth chamber, and x=0.1-0.4; then thermal evaporation is conducted, and the NPB film with the thickness of 50-120nm is grown on the MgxZn1-xO film; the LiF electrode modification layer with the thickness of 0.5-2nm is grown on the NPB film; and the electrode is produced on the LiF electrode modification layer, so that the MgZnO / NPB ultraviolet light detector having a quartz ITO / MgxZn1-xO / NPB / LiF / electrode structure is produced.

Description

technical field [0001] The invention belongs to the field of optoelectronic information, and relates to a MgZnO / NPB ultraviolet light detector, which is mainly used to generate low bias voltage and high response ultraviolet light detector. Background technique [0002] Ultraviolet light detectors are key components in many application fields, and are widely used in fire detection, flame sensing, astronomical observation and research, aviation and aerospace tracking and control, meteorological environment monitoring and forecasting, medical and health and biological engineering, communications and other fields. Traditionally, photomultiplier tubes, filters, and fluorescence down-conversion technology are used for ultraviolet detection. However, this equipment has disadvantages such as high cost, high pressure during operation, large volume, and heavy weight. The wide bandgap semiconductor ultraviolet detector has the advantages of low cost, long life, low driving voltage, sma...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/09H01L31/0296H01L31/18
CPCY02P70/50
Inventor 张希清胡佐富刘凤娟李振军王永生
Owner BEIJING JIAOTONG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com